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基于多量子阱二極管的全雙工可見光通信系統(tǒng)

發(fā)布時間:2019-01-28 19:11
【摘要】:隨著可見光通信技術(shù)在國內(nèi)外研究領(lǐng)域不斷取得突破性的進(jìn)展,可見光通信技術(shù)已經(jīng)受到越來越多來自社會和人們的關(guān)注,同時依托于半導(dǎo)體材料技術(shù)的發(fā)展和革新,新型發(fā)光二極管工藝的不斷完善,可見光通信技術(shù)迎來了前所未有的發(fā)展契機(jī)?梢姽馔ㄐ偶夹g(shù)具有傳輸速率快、保密性好、綠色環(huán)保以及不占用頻帶資源的優(yōu)勢,除此之外,在近距離傳輸中,其視距傳播的局限性將被大大減小,本文也將介紹一種利用微米級的新型半導(dǎo)體發(fā)光二極管來進(jìn)行全雙工通信的系統(tǒng)。在傳統(tǒng)射頻通信中,同時同頻全雙工通信(CCFD)由于其自身嚴(yán)重的傳輸干擾,始終是一個挑戰(zhàn)。對于可見光通信而言,兩個發(fā)光二極管可以構(gòu)成一個半雙工的通信傳輸系統(tǒng),但是不能構(gòu)成全雙工的通信系統(tǒng)。在本論文中,介紹了一種使用一對微米級InGaN/GaN多量子阱二極管的片上全雙工通信系統(tǒng),可以同時檢測和發(fā)射光信號。針對該系統(tǒng),論文主要工作如下:(1)將同時同頻雙工與可見光通信技術(shù)相結(jié)合,介紹了這兩項技術(shù)目前國內(nèi)外的發(fā)展?fàn)顩r,針對現(xiàn)有技術(shù)的不足和空缺,進(jìn)行提高和創(chuàng)新,應(yīng)用新型半導(dǎo)體材料的優(yōu)良特性,搭建微米級的片上系統(tǒng),結(jié)合可見光通信高速、安全、視距傳輸?shù)奶匦?為同時同頻全雙工技術(shù)開辟了新的道路。(2)分析可見光通信光源的特性,介紹了發(fā)光二極管的發(fā)光原理。在具體場景下,對傳統(tǒng)的發(fā)光二極管和多量子阱二極管的響應(yīng)度進(jìn)行分析和比較。同時,介紹了光電檢測器的工作原理,并將其進(jìn)行分類,比較不同的光電檢測器的性能指標(biāo)。(3)介紹了該同時同頻全雙工系統(tǒng)的各個模塊劃分,對每一個模塊進(jìn)行詳細(xì)的分析,給出明確的硬件設(shè)備及各項參數(shù),說明每一個模塊對應(yīng)的分工和作用。同時,具體介紹了多量子阱二極管的各項特性及工藝流程。(4)提供完整的系統(tǒng)設(shè)計依據(jù)和算法,針對電路中的各項參數(shù)逐一進(jìn)行分析,證明其能夠進(jìn)行全雙工通信的可行性,給出多組數(shù)據(jù)進(jìn)行比較,優(yōu)化電路中的各項參數(shù),提高整個系統(tǒng)的有效性和穩(wěn)定性。
[Abstract]:With the breakthrough of visible light communication technology at home and abroad, visible light communication technology has been paid more and more attention from society and people, while relying on the development and innovation of semiconductor material technology. With the continuous improvement of new light-emitting diode technology, visible light communication technology ushered in an unprecedented development opportunity. The visible light communication technology has the advantages of fast transmission rate, good confidentiality, green environment protection and no use of frequency band resources. In addition, the limitation of its line-of-sight propagation will be greatly reduced in the close-range transmission. This paper also introduces a novel semiconductor light-emitting diode (LED) system for full duplex communication. In traditional RF communication, simultaneous full duplex communication (CCFD) is always a challenge due to its own serious transmission interference. For visible light communication, two light-emitting diodes can form a half-duplex communication transmission system, but not a full-duplex communication system. In this paper, a full-duplex on-chip communication system using a pair of micrometer InGaN/GaN multiple quantum well diodes is introduced, which can detect and transmit optical signals at the same time. The main work of this paper is as follows: (1) combining simultaneous frequency duplex with visible light communication technology, the development of these two technologies at home and abroad is introduced. Based on the excellent characteristics of new semiconductor materials, a micron scale on-chip system is built, which combines the characteristics of high speed, security and line-of-sight transmission of visible light communication. It opens a new way for simultaneous frequency full-duplex technology. (2) analyzing the characteristics of visible light source and introducing the principle of light-emitting diode (LED). In this paper, the responsivity of traditional LED and MQW diode is analyzed and compared. At the same time, the working principle of the photodetector is introduced, and it is classified to compare the performance of different photodetectors. (3) the module partition of the full duplex system with the same frequency is introduced. Each module is analyzed in detail, the hardware equipment and parameters are given, and the corresponding division of labor and function of each module is explained. At the same time, the characteristics and technological process of multiple quantum well diodes are introduced in detail. (4) the design basis and algorithm of the system are provided, and the parameters in the circuit are analyzed one by one. The feasibility of full duplex communication is proved, and the comparison of multiple sets of data is given to optimize the parameters of the circuit to improve the effectiveness and stability of the whole system.
【學(xué)位授予單位】:南京郵電大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2017
【分類號】:TN929.1

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