基于GaAs肖特基二極管的330 GHz接收前端技術研究
發(fā)布時間:2018-08-15 14:29
【摘要】:基于GaAs肖特基二極管,設計實現(xiàn)了310~330 GHz的接收機前端.接收機采用330 GHz分諧波混頻器作為第一級電路,為降低混頻器變頻損耗,提高接收機靈敏度,分析討論了反向并聯(lián)混頻二極管空氣橋寄生電感和互感,采用去嵌入阻抗計算方法,提取了二極管的射頻、本振和中頻端口阻抗,實現(xiàn)了混頻器的優(yōu)化設計,提高了變頻損耗仿真精度.接收機的165 GHz本振源由×6×2倍頻鏈實現(xiàn),其中六倍頻采用商用有源器件,二倍頻則采用GaAs肖特基二極管實現(xiàn),其被反向串聯(lián)安裝于懸置線上,實現(xiàn)了偶次平衡式倍頻,所設計的倍頻鏈在165 GHz處輸出約10 dBm的功率,用以驅(qū)動330 GHz接收前端混頻器.接收機第二級電路采用中頻低噪聲放大器,以降低系統(tǒng)總的噪聲系數(shù).在310~330 GHz范圍內(nèi),測得接收機噪聲系數(shù)小于10.5 dB,在325 GHz處測得最小噪聲系數(shù)為8.5 dB,系統(tǒng)增益為(31±1)dB.
[Abstract]:Based on GaAs Schottky diode, a 310~330 GHz receiver front-end is designed and implemented. The 330 GHz sub-harmonic mixer is used as the first stage circuit in the receiver. In order to reduce the frequency conversion loss of the mixer and improve the sensitivity of the receiver, the parasitic inductance and mutual inductance of the air bridge of the reverse parallel mixer diode are analyzed and discussed. The RF, local oscillator and IF port impedance of diode are extracted to optimize the design of mixer and improve the simulation precision of frequency conversion loss. The 165 GHz local oscillator of receiver is realized by *6 *2 octave chain, in which the six octave frequency is realized by commercial active device and the two octave frequency is realized by GaAs Schottky diode, which is mounted in series in reverse direction. On-line, the even-order balanced frequency doubling is realized. The designed frequency doubling chain outputs about 10 dBm of power at 165 GHz to drive the 330 GHz receiving front-end mixer. The minimum noise figure at GHz is 8.5 dB, and the system gain is (31 + 1) dB..
【作者單位】: 南京信息工程大學電子與信息工程學院;
【基金】:江蘇省雙創(chuàng)團隊人才計劃~~
【分類號】:TN851
本文編號:2184489
[Abstract]:Based on GaAs Schottky diode, a 310~330 GHz receiver front-end is designed and implemented. The 330 GHz sub-harmonic mixer is used as the first stage circuit in the receiver. In order to reduce the frequency conversion loss of the mixer and improve the sensitivity of the receiver, the parasitic inductance and mutual inductance of the air bridge of the reverse parallel mixer diode are analyzed and discussed. The RF, local oscillator and IF port impedance of diode are extracted to optimize the design of mixer and improve the simulation precision of frequency conversion loss. The 165 GHz local oscillator of receiver is realized by *6 *2 octave chain, in which the six octave frequency is realized by commercial active device and the two octave frequency is realized by GaAs Schottky diode, which is mounted in series in reverse direction. On-line, the even-order balanced frequency doubling is realized. The designed frequency doubling chain outputs about 10 dBm of power at 165 GHz to drive the 330 GHz receiving front-end mixer. The minimum noise figure at GHz is 8.5 dB, and the system gain is (31 + 1) dB..
【作者單位】: 南京信息工程大學電子與信息工程學院;
【基金】:江蘇省雙創(chuàng)團隊人才計劃~~
【分類號】:TN851
【相似文獻】
相關期刊論文 前3條
1 楊伯龍;確定肖特基二極管直流參數(shù)的擬合——迭代法[J];計算機應用通訊;1982年02期
2 鄭欣;潘振國;秦明;陳妮;;SiC肖特基二極管在開關電源中的應用[J];長江大學學報(自科版);2006年07期
3 鄭欣;潘振國;秦明;陳妮;;SiC肖特基二極管在開關電源中的應用[J];長江大學學報(自科版)理工卷;2006年03期
,本文編號:2184489
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