本文選題：薄膜 + 氧化銦錫薄膜　； 參考：《激光與光電子學(xué)進(jìn)展》2017年01期

【摘要】：應(yīng)用電子束蒸鍍氧化銦錫(ITO)薄膜,在氮?dú)猸h(huán)境中對(duì)ITO膜進(jìn)行不同溫度下快速熱退火(RTA)處理。采用X射線衍射儀(XRD)、X射線光電子能譜(XPS)技術(shù)、掃描電子顯微鏡(SEM)、可見(jiàn)光分光譜儀、四探針測(cè)試儀測(cè)試了快速熱退火處理對(duì)電子束蒸鍍制備ITO薄膜的晶向、微結(jié)構(gòu)、組分、光電特性的影響。分析結(jié)果表明,退火溫度升高,有利于Sn釋放5s軌道上的電子,Sn~(4+)取代In~(3+)形成新的化學(xué)鍵。此外,退火溫度升高還提升了Sn、In原子的結(jié)合能,改變了Sn、In的氧化程度,增加了ITO薄膜晶體的載流子濃度和遷移率,改善了ITO薄膜晶體晶格畸變、缺陷密度與致密性,促進(jìn)晶格失配的恢復(fù)。在450℃溫度下快速熱退火可獲得光電特性較好的ITO薄膜。
[Abstract]:Indium tin oxide (ITO) thin films were deposited by electron beam evaporation. The ITO films were treated by rapid thermal annealing at different temperatures in nitrogen atmosphere. X-ray diffraction (XRD) technique, scanning electron microscope (SEM), visible light spectrometer (VLS) and four-probe tester were used to test the crystal orientation, microstructure and composition of ITO thin films prepared by rapid thermal annealing. The influence of photoelectric characteristics. The results show that the increase of annealing temperature is beneficial to the formation of new chemical bonds by the substitution of In~(3) for the release of 5 s electrons from Sn. In addition, the increase of annealing temperature also increases the binding energy of Sn-in atoms, changes the oxidation degree of Sn-In, increases the carrier concentration and mobility of ITO films, and improves the lattice distortion, defect density and densification of ITO thin films. Promote the recovery of lattice mismatch. ITO thin films with good photoelectric properties can be obtained by rapid thermal annealing at 450 鈩，

本文編號(hào)：1878962