本文選題：太赫茲超材料 + 多頻帶��； 參考：《光譜學(xué)與光譜分析》2017年05期

【摘要】：基于開口諧振環(huán)結(jié)構(gòu)設(shè)計(jì)了多頻帶太赫茲波調(diào)制器,并在諧振環(huán)的開口處及兩側(cè)均填充溫敏介質(zhì)銻化銦(InSb),研究了銻化銦的電磁性質(zhì)隨溫度的變化、等效電感的組數(shù)對(duì)共振頻帶數(shù)目的影響以及銻化銦不同的填充方式對(duì)太赫茲波調(diào)制特性隨溫度的變化規(guī)律。研究結(jié)果表明,當(dāng)環(huán)境溫度從160K上升到350K時(shí),銻化銦的載流子濃度和等離子體頻率逐漸增大,然而等效介電常數(shù)卻不斷減小;每增加一組等效電感,太赫茲波調(diào)制器都會(huì)相應(yīng)的增加一個(gè)共振頻帶;在調(diào)制器開口處和兩側(cè)均填充銻化銦時(shí),當(dāng)環(huán)境溫度在160~350K變化時(shí),溫度對(duì)太赫茲波的共振頻率和共振幅度的調(diào)制效果比僅在開口處或者兩側(cè)填充銻化銦時(shí)更明顯,且隨著溫度的升高,每個(gè)共振頻帶所對(duì)應(yīng)的共振頻率均明顯增大。
[Abstract]:A multi-band terahertz wave modulator is designed based on the open resonant ring structure. The temperature sensitive dielectric indium antimonide (InSb) is filled at the opening and both sides of the resonant ring. The electromagnetic properties of indium antimonide vary with temperature. The effect of the number of equivalent inductors on the number of resonance bands and the modulation characteristics of terahertz wave with different filling modes of indium antimonide vary with temperature. The results show that when the ambient temperature rises from 160 K to 350 K, the carrier concentration and plasma frequency of indium antimonide increase gradually, but the equivalent dielectric constant decreases continuously. The terahertz modulator will add a resonance frequency band correspondingly. When the modulator opening and both sides are filled with indium antimonide, when the ambient temperature changes at 160 ~ 350K, The modulation effect of temperature on the resonance frequency and amplitude of terahertz wave is more obvious than that when filled with indium antimonide only at the opening or both sides, and the resonance frequency corresponding to each resonance band increases obviously with the increase of temperature.
【作者單位】： 四川大學(xué)電子信息學(xué)院;
【基金】：四川省教育廳創(chuàng)新團(tuán)隊(duì)計(jì)劃項(xiàng)目(13Td0048) 科技部創(chuàng)新人才推進(jìn)計(jì)劃重點(diǎn)領(lǐng)域創(chuàng)新團(tuán)隊(duì)(2014RA4051)資助
【分類號(hào)】：O441

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1 趙臘梅;共面緊湊型電磁帶隙結(jié)構(gòu)的多頻帶與AMC-EBG特性研究[D];北京郵電大學(xué);2013年

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