本文選題：氣體擊穿 + 擊穿閾值�。� 參考：《發(fā)光學(xué)報(bào)》2017年01期

【摘要】：為了研究等離子體產(chǎn)生時(shí)的氣體擊穿特性,利用低氣壓條件下氣體擊穿場強(qiáng)閾值模型,分析了He、Ne、Ar、Kr、Xe和Hg蒸汽等6種典型放電氣體的擊穿閾值隨入射波頻率、電子溫度、氣體壓強(qiáng)以及氣體溫度的變化規(guī)律。結(jié)果表明:氣體擊穿閾值隨氣體壓強(qiáng)的增大而減小,隨氣體溫度、電子溫度和入射脈沖頻率的增大而增大。氣體壓強(qiáng)和入射頻率對(duì)擊穿閾值的影響大于氣體溫度和電子溫度,在所考慮的范圍內(nèi),氣體壓強(qiáng)對(duì)擊穿場強(qiáng)的影響約為100 V/m,入射脈沖頻率對(duì)擊穿場強(qiáng)的影響為50~300 V/m,氣體溫度和電子溫度對(duì)擊穿場強(qiáng)的影響為20~30 V/m。當(dāng)考慮氣體壓強(qiáng)、氣體溫度以及電子溫度等因素的影響時(shí),各種氣體的擊穿場強(qiáng)閾值產(chǎn)生的變化規(guī)律相類似;但考慮入射頻率的影響時(shí),不同氣體的擊穿場強(qiáng)閾值差異很大。在所考慮的典型放電氣體中,Xe具有最低的擊穿場強(qiáng)閾值,He的擊穿閾值最大。
[Abstract]:In order to study the breakdown characteristics of gases produced by plasma, the breakdown threshold values of six typical discharge gases, such as He-Nean Arn Kryn Xe and Hg vapor, are analyzed with the incident wave frequency and electron temperature by using the gas breakdown field intensity threshold model under low pressure. The variation of gas pressure and gas temperature. The results show that the gas breakdown threshold decreases with the increase of the gas pressure, and increases with the increase of the gas temperature, electron temperature and the frequency of the incident pulse. The influence of gas pressure and incident frequency on breakdown threshold is greater than that of gas temperature and electron temperature. The influence of gas pressure on breakdown field is about 100 V / m, the influence of incident pulse frequency on breakdown field is 50 ~ 300 V / m, and the influence of gas temperature and electron temperature on breakdown field strength is 20 ~ 30 V / m. When considering the influence of gas pressure, gas temperature and electron temperature, the breakdown field intensity threshold of various gases is similar, but considering the influence of incident frequency, the breakdown field intensity threshold of different gases is very different. Among the typical discharge gases considered, Xe has the lowest breakdown field strength threshold and he has the highest breakdown threshold.
【作者單位】： 脈沖功率激光技術(shù)國家重點(diǎn)實(shí)驗(yàn)室;
【基金】：國家高技術(shù)研究發(fā)展計(jì)劃(863)(2015AA0392)資助項(xiàng)目~~
【分類號(hào)】：O539;O461

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