本文選題：集成光學(xué)　切入點：鉺摻雜　出處：《紅外與激光工程》2017年08期 　論文類型：期刊論文

【摘要】：首次提出了采用Er-Ta共濺、高溫退火的方法,在硅基二氧化硅表面制備高摻鉺氧化鉭(Er:Ta_2O_5)薄膜。利用棱鏡耦合儀分析了鉺摻雜濃度對Er:Ta_2O_5薄膜的折射率的影響,結(jié)果表明:Er:Ta_2O_5薄膜的折射率隨著Er摻雜濃度的增加而略微降低,且所制備的薄膜沒有明顯的各向異性。在此基礎(chǔ)上,成功制備出Er摻雜濃度分別為0、2.5、5、7.5 mol%的硅基Er:Ta_2O_5脊形波導(dǎo),波導(dǎo)在1 550 nm波段可實現(xiàn)單模傳輸,通過截斷法得到波導(dǎo)在1 600 nm波長處的傳輸損耗分別為0.6、1.1、2.5、5.0 d B/cm。在所制備的Er:Ta_2O_5薄膜中,盡管沒有發(fā)現(xiàn)Er_2O_3結(jié)晶析出,但薄膜中的Er3+會影響Ta_2O_5晶體的結(jié)晶程度,進而增加波導(dǎo)的傳輸損耗。最終文中制備的摻雜濃度為2.5 mol%的硅基Er:Ta_2O_5脊形波導(dǎo)通過980 nm激光泵浦,在1 531 nm信號波長下達到了3.1 d B/cm的凈增益。
[Abstract]:Er-Ta co-splashing and high temperature annealing have been proposed for the first time to prepare er _ 2O _ 2 thin films with high erbium doped tantalum oxide (er _ 2O _ 2O _ 5) on silica substrate. The effect of erbium doped concentration on the refractive index of Er:Ta_2O_5 films has been analyzed by means of prism coupling instrument. The results show that the refractive index decreases slightly with the increase of er doping concentration, and there is no obvious anisotropy in the prepared thin films. On the basis of this, a silicon-based Er:Ta_2O_5 ridge waveguide with er doping concentration of 0.2.5% or 57.5 mol% has been successfully fabricated. The waveguide can transmit at 1 550 nm. The transmission loss at 1 600 nm can be obtained by truncation method. The transmission loss of the waveguide at the wavelength of 1 600 nm is 0. 6 ~ 1. 1 / 2. 5 ~ 5. 0 dB / cm ~ (-1) respectively. In the prepared Er:Ta_2O_5 films, the crystallization of Er_2O_3 is not found. However, the Er3 in the film will affect the crystallization of Ta_2O_5 crystal and increase the transmission loss of the waveguide. Finally, the silicon based Er:Ta_2O_5 ridged waveguide with 2.5 mol% doping concentration is pumped by a 980nm laser. The net gain of 3.1 dB / cm was obtained at the wavelength of 1 531 nm.
【作者單位】： 天津大學(xué)精密儀器與光電子工程學(xué)院;天津科技大學(xué)應(yīng)用文理學(xué)院;
【分類號】：TN252

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