本文關(guān)鍵詞： 微波等離子體 化學(xué)氣相沉積 單晶金剛石 刻蝕坑　出處：《真空科學(xué)與技術(shù)學(xué)報(bào)》2017年09期 　論文類型：期刊論文

【摘要】：采用自制的微波等離子體化學(xué)氣相沉積裝置,在高溫高壓法合成的金剛石的襯底上外延生長單晶金剛石。實(shí)驗(yàn)分為兩步,首先用氫氧等離子體在生長之前進(jìn)行預(yù)處理刻蝕,然后外延生長30 h。利用金相顯微鏡和激光拉曼光譜來表征單晶金剛石刻蝕坑以及外延生長的單晶金剛石質(zhì)量。研究結(jié)果表明,氧會優(yōu)先刻蝕籽晶表面的缺陷和位錯(cuò),可以通過刻蝕坑密度來判斷襯底質(zhì)量,且經(jīng)過預(yù)處理刻蝕能消除單晶金剛石表面的缺陷。籽晶表面經(jīng)刻蝕后會出現(xiàn)平底型和尖錐型兩種倒金字塔型刻蝕坑,且晶體表面的原本缺陷或由拋光造成起的缺陷會隨刻蝕時(shí)間延長、刻蝕強(qiáng)度增大而消失。經(jīng)過氫氧等離子體預(yù)處理外延生長的單晶中非金剛石相雜質(zhì)含量較少,結(jié)晶性高。
[Abstract]:Monocrystalline diamond was epitaxially grown on the substrate of diamond synthesized by high temperature and high pressure method using a self-made microwave plasma chemical vapor deposition device. The experiment is divided into two steps. Then the epitaxial growth time was 30 h. The etched pits of single crystal diamond and the quality of epitaxial growth of single crystal diamond were characterized by metallographic microscope and laser Raman spectroscopy. The results show that oxygen preferentially etches defects and dislocations on the surface of seed crystals. The substrate quality can be judged by the densities of etching pits, and the defects on the surface of single crystal diamond can be eliminated by pre-etching. The original defects on the crystal surface or the defects caused by polishing will disappear with the increase of etching time and etching strength. The non-diamond phase grown by hydrogen oxygen plasma pretreatment has less impurity content and higher crystallinity.
【作者單位】： 武漢工程大學(xué)材料科學(xué)與工程學(xué)院湖北省等離子體化學(xué)與新材料重點(diǎn)實(shí)驗(yàn)室;中國科學(xué)院等離子體物理研究所;
【分類號】：O539

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本文編號：1537033