本文關(guān)鍵詞： 大功率半導(dǎo)體激光器 靜電 I-V特性 光輸出功率　出處：《激光與紅外》2017年06期 　論文類型：期刊論文

【摘要】：為了判別大功率半導(dǎo)體激光器是否為靜電損毀失效,對大功率半導(dǎo)體激光器進(jìn)行了靜電損毀機(jī)制的研究。通過測量和表征大功率半導(dǎo)體激光器靜電損毀現(xiàn)象,為判別其失效提供有效判據(jù)。首先,對GaAs基980 nm大功率半導(dǎo)體激光器(HPLD)分別施加了-200 V,-600 V,-800 V,-1200 V以及+5000 V的靜電打擊(ESD),每次打擊后,測量樣品電學(xué)參數(shù)和光學(xué)參數(shù)。其次,對打擊后的器件進(jìn)行腐蝕并顯微觀察其打擊后損傷現(xiàn)象。反相ESD后,半導(dǎo)體激光器I-V曲線有明顯的軟擊穿現(xiàn)象,在反向4 V電壓下反向1200 V靜電打擊后漏電為打擊的5883854.92倍。正向5000 V靜電打擊后器件沒有明顯的軟擊穿現(xiàn)象,且功率下降很小。在反向ESD后器件腐蝕金電極后表面有明顯熔毀現(xiàn)象,正向靜電打擊后則沒有此現(xiàn)象。通過正向靜電打擊和反向靜電打擊下器件反應(yīng)的不同I-V特性和損傷表征,推測正向瞬時大電壓大電流下,器件的I-V特性無明顯變化,而反向大電壓大電流打擊會導(dǎo)致I-V曲線出現(xiàn)明顯軟擊穿,功率下降和表面熔毀現(xiàn)象,為判別靜電損毀提出了有效判據(jù)。
[Abstract]:In order to determine whether the high power semiconductor laser is electrostatic damage failure, the electrostatic damage mechanism of high power semiconductor laser is studied. The electrostatic damage phenomenon of high power semiconductor laser is measured and characterized. In order to provide an effective criterion for judging its failure, first of all, the GaAs based 980nm high power semiconductor laser has been applied -200V ~ 600V ~ (-1) V ~ (-800V), respectively. After each strike, the electrical and optical parameters of the sample were measured. The device after striking was corroded and the damage phenomenon was observed microscopically. After reverse-phase ESD, the I-V curve of semiconductor laser has obvious soft breakdown phenomenon. The leakage is 5883854.92 times as high as that after the negative 1200V electrostatic strike at the reverse 4V voltage. There is no obvious soft breakdown phenomenon after the forward 5000V electrostatic strike. And the power drop is very small. The surface of the device corrodes the gold electrode after the reverse ESD has obvious melting phenomenon. There is no such phenomenon after forward electrostatic strike. Through the different I-V characteristics and damage characterization of the device reaction under forward electrostatic strike and reverse electrostatic strike, it is inferred that under the high voltage and high current in the forward instantaneous. The I-V characteristic of the device has no obvious change, but the reverse high voltage and large current strike will lead to the obvious soft breakdown of I-V curve, the power drop and the surface melting phenomenon, which provides an effective criterion for distinguishing the electrostatic damage.
【作者單位】： 北京工業(yè)大學(xué)光電子實驗室;
【基金】：國家自然科學(xué)基金項目(No.11204009) 北京市自然科學(xué)基金項目(No.4142005) 北京市教委能力提升項目(No.PXM2016_014204_500026)資助
【分類號】：TN248.4
【正文快照】： 1引言由于大功率半導(dǎo)體激光器(HPLD)具有電光轉(zhuǎn)化效率高、器件尺寸小和單色性好等優(yōu)點,其應(yīng)用范圍也在不斷擴(kuò)大。在光學(xué)通信、固態(tài)激光器泵浦源、醫(yī)學(xué)、工業(yè)生產(chǎn)和3D激光打印等領(lǐng)域,大功率半導(dǎo)體激光器都有廣泛應(yīng)用[1]。隨著應(yīng)用領(lǐng)域的不斷擴(kuò)展,人們對HPLD可靠性的要求也越來，

本文編號：1445068