【摘要】：為了獲得高性能的微波噪聲抑制器,采用射頻磁控濺射工藝制備了FeCoB基薄膜微波噪聲抑制器,并用微帶線法測試了其傳導(dǎo)噪聲抑制特性。研究了薄膜噪聲抑制器的工藝參數(shù)和幾何尺寸對其傳導(dǎo)噪聲抑制特性的影響。結(jié)果表明,合適的低氬氣壓有利于其噪聲抑制性能的提高;通過控制FeCoB基薄膜和SiO2介質(zhì)層的幾何尺寸,可以實現(xiàn)對其微波噪聲抑制性能的連續(xù)可調(diào),這主要歸因于軟磁薄膜的鐵磁共振損耗和渦流損耗。制備的FeCoNiB薄膜(長25mm,寬10mm,厚250nm)微波噪聲抑制器在3.4GHz時的信號傳輸功率損耗比Ploss/Pin達到75%。結(jié)果表明,該FeCoB基薄膜微波噪聲抑制器可應(yīng)用于GHz頻段抗電磁干擾中。
[Abstract]:In order to obtain high performance microwave noise suppressor, FeCoB thin film microwave noise suppressor was fabricated by RF magnetron sputtering, and its conductive noise suppression characteristics were measured by microstrip line method. The effects of process parameters and geometric dimensions of thin film noise suppressor on its conductive noise suppression characteristics are studied. The results show that proper low argon pressure is beneficial to the improvement of the noise suppression performance, and that the microwave noise suppression performance can be continuously adjusted by controlling the geometric size of the FeCoB film and the SiO2 dielectric layer. This is mainly due to ferromagnetic resonance loss and eddy current loss of soft magnetic thin films. The FeCoNiB thin film (25mm in length, 10mm in width, thick in 250nm) has a signal transmission power loss of 75% higher than that of Ploss/Pin at 3.4GHz. The results show that the FeCoB thin film microwave noise suppressor can be used to resist electromagnetic interference in GHz band.
【作者單位】： 重慶大學(xué)光電工程學(xué)院傳感器與儀器研究中心;
【基金】：國家自然科學(xué)基金資助項目(61203215) 重慶市自然科學(xué)基金資助項目(cstc2012jjA40009)
【分類號】：TB535;TN911.4

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