【摘要】：本論文針對(duì)微波/毫米波系統(tǒng)中常見(jiàn)的微帶線-微帶線垂直過(guò)渡結(jié)構(gòu),微帶線-共面波導(dǎo)過(guò)渡結(jié)構(gòu),微帶線-共面帶狀線過(guò)渡結(jié)構(gòu)進(jìn)行了理論分析和創(chuàng)新研究。為了增加帶寬和獲得良好的阻抗匹配特性,在微帶線-微帶線垂直過(guò)渡的設(shè)計(jì)中,我們采用了微帶線-槽線過(guò)渡形式,主要選用了低阻抗開(kāi)路微帶線支節(jié)和階梯阻抗短路槽線支節(jié)。為了獲得寬帶傳輸性能,在微帶線-共面波導(dǎo)過(guò)渡結(jié)構(gòu)的設(shè)計(jì)中,我們采用了微帶線與共面波導(dǎo)間的電磁耦合形式,并且引入了高特性阻抗的微帶短路支節(jié)并聯(lián)在微帶線上。為了實(shí)現(xiàn)微帶線-共面帶狀線的過(guò)渡結(jié)構(gòu)的寬帶、小型化設(shè)計(jì),我們將微帶線和共面帶狀線位于介質(zhì)基片的兩側(cè)并且采用微帶線與共面帶狀線的磁耦合的設(shè)計(jì)方案,該方案避免了微帶線和共面帶狀線位于同層而需要的場(chǎng)匹配段及阻抗匹配段。 通過(guò)對(duì)以上三類(lèi)過(guò)渡結(jié)構(gòu)的理論分析并有效結(jié)合三維電磁場(chǎng)仿真軟件(HFSS)進(jìn)行仿真,我們對(duì)所提出的新型過(guò)渡結(jié)構(gòu)進(jìn)行了理論驗(yàn)證,并且分別對(duì)微帶線-微帶線垂直過(guò)渡結(jié)構(gòu)和微帶線-共面波導(dǎo)過(guò)渡結(jié)構(gòu)進(jìn)行了加工和測(cè)試。對(duì)于微帶線-微帶線垂直過(guò)渡結(jié)構(gòu),仿真和測(cè)試結(jié)果都表明,-10dB回波損耗的帶寬為2.3-14GHz(143%),通帶內(nèi)插損小于2dB。對(duì)于微帶線-共面波導(dǎo)過(guò)渡結(jié)構(gòu),仿真和測(cè)試結(jié)果都表明,-10dB回波損耗的帶寬為2.6-12.2GHz(129%),通帶內(nèi)插損小于1.7dB。對(duì)于微帶線-共面帶狀線過(guò)渡結(jié)構(gòu),仿真結(jié)果表明-10dB回波損耗的帶寬為5.5-18.3GHz(107%),通帶內(nèi)的插損小于3dB。結(jié)果表明,本文所提出的三類(lèi)過(guò)渡結(jié)構(gòu)都有寬帶寬,低插損,結(jié)構(gòu)緊湊的特點(diǎn),這些過(guò)渡結(jié)構(gòu)在微波集成電路中如單片微波集成電路(MMIC)中具有良好的工程應(yīng)用價(jià)值。
[Abstract]:In this paper, the vertical transition structure of microstrip line-microstrip line, the transition structure of microstrip line-coplanar waveguide and the transition structure of microstrip line-coplanar strip line in microwave / millimeter wave system are studied theoretically and innovatively. In order to increase the bandwidth and obtain good impedance matching characteristics, in the design of vertical transition of microstrip line-microstrip line, we adopt the form of microstrip line-slot line transition. Low impedance open-circuit microstrip branch and step impedance short-circuit slot branch are selected. In order to obtain wideband transmission performance, the electromagnetic coupling between microstrip line and coplanar waveguide is adopted in the design of microstrip line-coplanar waveguide transition structure, and the microstrip short-circuit branch with high characteristic impedance is introduced in parallel to microstrip line. In order to realize the wideband and miniaturization design of the transition structure of microstrip line and coplanar strip line, we put the microstrip line and coplanar strip line on both sides of the dielectric substrate and adopt the design scheme of magnetic coupling between the microstrip line and the coplanar strip line. This scheme avoids the field matching and impedance matching of microstrip line and coplanar strip line in the same layer. Through the theoretical analysis of the three types of transition structures mentioned above and the simulation of the three dimensional electromagnetic field simulation software (HFSS), we have theoretically verified the proposed new transition structures. The vertical transition structure of microstrip line-microstrip line and the transition structure of microstrip line-coplanar waveguide were fabricated and tested respectively. For the vertical transition structure between microstrip line and microstrip line, the simulation and test results show that the bandwidth of echo loss is 2.3-14GHz (14.3%), and the band insertion loss is less than 2 dB. For the microstrip wire-coplanar waveguide transition structure, the simulation and test results show that the bandwidth of echo loss is 2.6-12.2GHz (129%), and the band insertion loss is less than 1.7 dB. The simulation results show that the bandwidth of -10dB echo loss is 5.5-18.3GHz (107%) and the insertion loss in passband is less than 3 dB. The results show that the three types of transition structures proposed in this paper have the characteristics of wide bandwidth, low insertion loss and compact structure. These transition structures have good engineering application value in microwave integrated circuits such as monolithic microwave integrated circuits (MMIC).
【學(xué)位授予單位】：南京理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類(lèi)號(hào)】：TN817

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相關(guān)期刊論文 前2條

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本文編號(hào)：2170972