本文選題：等離子顯示器(PDP) + 介質(zhì)保護(hù)層��； 參考：《電子科技大學(xué)》2014年碩士論文

【摘要】：等離子顯示器(PDP)具有色彩逼真、屏幕大、視角寬、亮度高、響應(yīng)速度快及清晰度高等特點(diǎn),在眾多顯示器件中脫穎而出,成為高清晰度大屏幕電視及顯示終端的最佳候選者之一,但由于其功耗大、成本高,制約了PDP的進(jìn)一步發(fā)展。改善PDP介質(zhì)層的性能,是提高PDP放電效率和降低功耗的重要途徑,其方法主要有在MgO介質(zhì)層中摻雜其他材料、尋找新材料代替MgO等。結(jié)合國內(nèi)外相關(guān)研究成果,本文提出了在MgO中摻雜Al的方法,來實(shí)現(xiàn)改善PDP介質(zhì)層性能的目的。本文的主要內(nèi)容及結(jié)論:1、用水熱法制備了鋁摻雜氧化鎂粉末,用SEM和XRD對鋁摻雜氧化鎂粉末的形貌和晶相進(jìn)行了表征,對鋁摻雜氧化鎂粉末的制備方法進(jìn)行了優(yōu)化,制備出了形狀規(guī)則、粒徑大于5μm的立方體狀鋁摻雜氧化鎂粉末。2、探索了直接沉淀法和金屬醇鹽水解法制備鋁摻雜氧化鎂粉末,用SEM和XRD對鋁摻雜氧化鎂粉末的形貌和晶相進(jìn)行了表征。直接沉淀法制備鋁摻雜氧化鎂的缺點(diǎn)是,鋁摻雜量大于1%時(shí)無法使鋁完全摻入到MgO晶格中,且直接沉淀法無法制備出立方體狀顆粒。金屬醇鹽水解法制備鋁摻雜氧化鎂的缺點(diǎn)是,金屬醇鹽溶液難以制備,鋁摻雜量難以控制,制備時(shí)間周期長,且不適合大規(guī)模生產(chǎn)。3、測試了鋁摻雜氧化鎂介質(zhì)層PDP的放電電壓性能。水熱法制備的鋁摻雜氧化鎂粉末,當(dāng)鋁摻雜量不超過3%時(shí),PDP的著火電壓與維持電壓可分別降低16.3%和15.7%。沉淀法制備的鋁摻雜氧化鎂粉末,只有當(dāng)鋁摻雜量不超過1%時(shí),PDP的放電電壓有所降低,著火電壓和維持電壓可分別降低9.4%和8.6%。4、研究了鋁摻雜氧化鎂介質(zhì)層PDP的放電延遲時(shí)間。不同鋁摻雜量的鋁摻雜氧化鎂介質(zhì)層PDP的放電延遲時(shí)間,均少于具有純氧化鎂介質(zhì)層的PDP,延遲時(shí)間的減少值在幾十納秒到150納秒之間,且隨著鋁摻雜量的增加,放電延遲時(shí)間縮短,隨著放電氣體中Xe比例的增加,放電延遲時(shí)間也縮短。5、設(shè)計(jì)和制作了兩種PDP放電測試用驅(qū)動電源。一種是利用一個(gè)MOSFET作為開關(guān)管,開關(guān)頻率為50kHz、脈沖占空比為50%、脈沖幅度0~800V可調(diào)的單向脈沖電源;另一種是采用全橋驅(qū)動方式,開關(guān)頻率為50kHz、脈沖占空比為50%、脈沖幅度0~1000V可調(diào)的雙向脈沖電源,這些電源的性能穩(wěn)定可靠,保證了PDP放電實(shí)驗(yàn)工作的順利進(jìn)行。
[Abstract]:Plasma display (PDP) has the characteristics of realistic color, large screen, wide viewing angle, high brightness, fast response speed and high definition. It is one of the best candidates for high definition and large screen TV and display terminal, but it restricts the further development of PDP because of its high power consumption and high cost. Improving the performance of PDP dielectric layer is an important way to improve the discharge efficiency and reduce the power consumption of PDP. The main methods include doping other materials in MgO dielectric layer and finding new materials instead of MgO. Based on the research results at home and abroad, the method of doping Al in MgO is proposed to improve the properties of PDP dielectric layer. The main contents and conclusions of this paper are as follows: (1) Aluminum-doped magnesium oxide powder was prepared by hydrothermal method. The morphology and crystal phase of Al-doped magnesium oxide powder were characterized by SEM and XRD, and the preparation method of Al-doped magnesium oxide powder was optimized. Cubic aluminum-doped magnesium oxide powder, whose shape is regular and whose diameter is larger than 5 渭 m, is prepared. Direct precipitation method and hydrolysis of metal alcohol salt water are explored to prepare Al-doped magnesium oxide powder. The morphology and crystal phase of Al doped magnesium oxide powder were characterized by SEM and XRD. The disadvantage of preparing Al-doped magnesium oxide by direct precipitation method is that aluminum can not be completely doped into MgO lattice when the amount of Al doping is greater than 1, and cubic particles can not be prepared by direct precipitation method. The disadvantages of preparing aluminum doped magnesium oxide by hydrolysis of metal alcohol brine are that it is difficult to prepare the solution of metal alcohol salt, the amount of aluminum doping is difficult to control, and the preparation time is long. The discharge voltage performance of aluminum doped magnesium oxide dielectric layer PDP was tested. When the amount of Al doped magnesium oxide powder prepared by hydrothermal method is not more than 3, the ignition voltage and maintenance voltage of PDP can be reduced by 16.3% and 15.7%, respectively. The discharge voltage of PDP was decreased, the ignition voltage and the maintenance voltage were decreased by 9.4% and 8.6%, respectively. The discharge delay time of Al-doped MgO dielectric layer PDP was studied. The delay time of aluminum doped MgO dielectric layer PDP is less than that of pure MgO dielectric layer, and the decrease of delay time is from tens of nanoseconds to 150 nanoseconds, and with the increase of aluminum doping amount, the delay time of PDP is less than that of pure magnesium oxide dielectric layer. The discharge delay time is shortened, and the discharge delay time is shortened by .5with the increase of the ratio of Xe in the discharge gas. Two kinds of driving power supply for PDP discharge test are designed and fabricated. One is to use a MOSFET as a switching tube, the switching frequency is 50 kHz, the pulse duty cycle is 50, the pulse amplitude is 0 ~ 800V adjustable unidirectional pulse power supply; the other is a full-bridge drive mode. The switching frequency is 50 kHz, the pulse duty cycle is 50 and the pulse amplitude is 0 ~ 1000V. The performance of these power sources is stable and reliable, which ensures the smooth operation of PDP discharge experiment.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TN873.94

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 郭濱剛,劉純亮,劉柳,范玉峰,夏星;電子束蒸鍍制備的Mg-Zr-O復(fù)合介質(zhì)保護(hù)膜結(jié)晶取向的研究[J];真空科學(xué)與技術(shù)學(xué)報(bào);2005年01期

，

本文編號：2015084