本文選題：時(shí)域行波法 + 分布反饋激光器��； 參考：《華中科技大學(xué)》2014年博士論文

【摘要】：波分復(fù)用無源光網(wǎng)絡(luò)(WDM-PON)系統(tǒng)以其高容量、大帶寬等特點(diǎn)使其成為下一代光接入網(wǎng)中最具前景的方案之一。而低成本、高性能的光電子器件則是WDM-PON系統(tǒng)在未來能否取得成功的關(guān)鍵。單片集成光源器件相比傳統(tǒng)的分立器件封裝成本低、器件性能強(qiáng),因此是未來WDM-PON系統(tǒng)用光電子器件發(fā)展的必然方向。本文從光電子器件理論建模出發(fā)結(jié)合器件制作工藝,針對WDM-PON中的低成本光源器件進(jìn)行了深入的理論與實(shí)驗(yàn)研究,開展了以下幾個(gè)方面的研究工作： 運(yùn)用k·p理論模型,對半導(dǎo)體量子阱材料增益譜進(jìn)行了理論計(jì)算,分析了量子阱應(yīng)變量及阱寬等參量對半導(dǎo)體材料能帶結(jié)構(gòu)及增益譜的影響。討論了不同應(yīng)用下,量子阱結(jié)構(gòu)設(shè)計(jì)的原則與要求。 基于時(shí)域傳輸矩陣模型及材料增益計(jì)算模型,開發(fā)了半導(dǎo)體激光器器件模擬平臺�；诒酒脚_,對分布布拉格反饋(DFB)半導(dǎo)體激光器的空間燒孔效應(yīng)進(jìn)行了模擬仿真。詳細(xì)討論了在光柵結(jié)構(gòu)設(shè)計(jì)中集中相移、分布相移、多相移、分布反饋系數(shù)等參量對DFB半導(dǎo)體激光器空間燒孔效應(yīng)的影響。分析討論了光柵歸一化耦合系數(shù)對DFB激光器調(diào)制特性的影響。 使用新型動(dòng)態(tài)模型分析半導(dǎo)體激光器,根據(jù)器件中有源區(qū)波導(dǎo)與無源區(qū)波導(dǎo)的不同特點(diǎn)分別采用時(shí)域模型及頻域模型,而后通過數(shù)字濾波器的方法將兩者有機(jī)地聯(lián)系起來。并通過數(shù)字濾波器法考慮了器件增益譜的非平坦效應(yīng)。利用該新型動(dòng)態(tài)分析模型,對雙微環(huán)耦合半導(dǎo)體激光器這一新型低成本、高性能的可調(diào)諧激光類型進(jìn)行了時(shí)域靜態(tài)及動(dòng)態(tài)分析。主要分析討論了微環(huán)耦合系數(shù)及損耗對器件P-I特性、小信號調(diào)制特性、大信號調(diào)制特性以及波長切換特性的影響。 使用波束傳輸(BPM)算法設(shè)計(jì)并優(yōu)化了InP基四通道、八通道多模干涉(MMI)器件以及16通道陣列波導(dǎo)光柵(AWG)器件。系統(tǒng)地討論了MMI器件中,制作工藝誤差對器件損耗以及帶寬的影響。詳細(xì)討論了AWG的性能估算的解析方法,利用該方法研究了AWG器件中陣列波導(dǎo)間距及陣列波導(dǎo)喇叭口(Taper)寬度對器件插損均勻性及中心通道插損的影響�；谘芯拷Y(jié)論,設(shè)計(jì)了InP基AWG器件,并利用BPM算法對AWG器件進(jìn)行了性能模擬,設(shè)計(jì)指標(biāo)符合預(yù)期。 使用納米壓印技術(shù)制作DFB激光器掩埋光柵,針對直接使用納米壓印膠后,掩埋生長質(zhì)量不佳,出現(xiàn)大量位錯(cuò)的問題,提出了多層掩膜去除納米壓印膠殘膠的方法。該方法大大提高了光柵掩埋質(zhì)量,極大地降低了最終器件的閾值,達(dá)到商用標(biāo)準(zhǔn)。 對金屬有機(jī)物氣相沉淀(MOCVD)對接生長工藝進(jìn)行了系統(tǒng)地研究。討論了介質(zhì)膜刻蝕以及InP刻蝕方法對最終對接生長質(zhì)量的影響。改進(jìn)了濕法腐蝕策略,并調(diào)整干法刻蝕參數(shù),最終完成了高質(zhì)量的對接材料生長。結(jié)合前述納米壓印工藝,提出了前置光柵制作而后對接生長的新工藝順序,解決了對接生長工藝后,有源區(qū)表面相對無源區(qū)表面凹陷,納米壓印工藝難以實(shí)施在有源區(qū)的問題。采用新工藝,完成了高質(zhì)量內(nèi)藏光柵單片集成外延材料的制備。 系統(tǒng)地研究了等離子誘導(dǎo)量子阱混雜單片集成工藝,提出了基于灰度掩膜的等離子誘導(dǎo)量子阱混雜方法,實(shí)現(xiàn)了同一外延片上多個(gè)帶隙及連續(xù)帶隙的橫向集成。詳細(xì)研究討論了掩膜版占空比及條紋寬度對等離子誘導(dǎo)量子阱混雜程度的影響。 研究了單片集成器件中多種波導(dǎo)結(jié)構(gòu)橫向單片集成問題。提出了新型自對準(zhǔn)光刻工藝。利用光刻膠上生長二氧化硅,并進(jìn)一步使用lift-off工藝剝離二氧化硅的方式,實(shí)現(xiàn)了多種去除方式的多掩膜自對準(zhǔn)套刻,完成了多種波導(dǎo)結(jié)構(gòu)橫向單片集成的高質(zhì)量制作。 在前述理論設(shè)計(jì)及相關(guān)配套工藝研究的支持下,實(shí)際制作了用于集成的各種分立器件包括16通道1550nm波段密集波分復(fù)用(DWDM)陣列激光器、4通道1310nm波段粗波分復(fù)用(CWDM)陣列激光器、4通道InP基MMI耦合器、16通道InP基AWG器件。對陣列器件熱調(diào)諧串?dāng)_進(jìn)行了測試與分析。利用X射線衍射(XRD)、光熒光(PL)系統(tǒng)地分析了納米壓印光柵制作工藝對量子阱外延片的影響,研究了納米壓印光柵工藝對DFB半導(dǎo)體激光器壽命的影響。 在前述理論設(shè)計(jì),相關(guān)配套工藝研究及分立器件制作的基礎(chǔ)上,完成了4通道DFB陣列激光器單片集成MMI耦合器的單片集成光源器件制作。器件平均閾值小于10mA,邊摸抑制比大于50dB。完成了16通道DFB陣列激光器單片集成AWG合并器的單片集成光源制作,器件光譜邊摸抑制比大于40dB,通道間隔1.6nnm,均方根誤差小于0.1nnm。
[Abstract]:The wavelength division multiplexing passive optical network (WDM-PON) system has become one of the most promising options in the next generation optical access network with its high capacity, large bandwidth and so on. Low cost and high performance optoelectronic devices are the key to the success of the WDM-PON system in the future. Compared with the traditional separate device packaging cost, the monolithic integrated light source device Low and strong device performance is the inevitable direction of the development of WDM-PON system in the future. In this paper, based on the theoretical modeling of optoelectronic devices and the technology of device fabrication, the low cost light source devices in WDM-PON are studied in depth, and the research work in the following aspects is carried out.
Using the k p theory model, the gain spectrum of semiconductor quantum well material is theoretically calculated. The effects of the quantum well stress and the well width on the band structure and the gain spectrum of semiconductor materials are analyzed. The principles and requirements of the design of quantum well structure under different applications are discussed.
Based on the time domain transfer matrix model and the material gain calculation model, a semiconductor laser device simulation platform is developed. Based on this platform, the spatial hole burning effect of distributed Prague feedback (DFB) semiconductor laser is simulated. The focus phase shift, distribution phase shift, multiphase shift and distributed feedback in the design of grating structure are discussed in detail. The influence of coefficient and other parameters on the space burning effect of DFB semiconductor laser is analyzed and discussed. The effect of normalized coupling coefficient of grating on modulation characteristics of DFB laser is discussed.
A new dynamic model is used to analyze the semiconductor laser. The time domain model and the frequency domain model are used according to the different characteristics of the active region waveguide and the passive region waveguide. Then the two are organically connected by the digital filter method, and the nonflat effect of the gain spectrum of the device is considered by the digital filter method. A new dynamic analysis model is used to analyze the static and dynamic time domain of a new type of low cost and high performance tunable laser with double microloop coupled semiconductor laser. The effects of the coupling coefficient and loss on the P-I characteristics, modulation characteristics of small signal, modulation characteristics of large signal and wavelength switching characteristics are mainly discussed.
Using the beam transmission (BPM) algorithm, the InP based four channel, the eight channel multimode interference (MMI) device and the 16 channel arrayed waveguide grating (AWG) device are designed and optimized. The influence of the fabrication error on the device loss and the bandwidth in the MMI device is systematically discussed. The analytical method of the performance estimation of the AWG is discussed in detail. The method is used to study the A. The influence of the spacing of the array waveguide and the width of the array waveguide (Taper) on the insertion loss uniformity and the insertion loss of the central channel in WG devices. Based on the research conclusion, a InP based AWG device is designed, and the performance simulation of the AWG device is carried out with the BPM algorithm. The design index is in line with the expectation.
The nano embossing technology is used to make the buried grating of DFB laser. In view of the problem that the buried growth quality is not good and a large number of dislocations appear after the direct use of nanoscale imprint glue, a method of removing the nanoscale adhesive by multi-layer mask is proposed. This method greatly improves the burial quality of the grating, greatly reduces the threshold of the final device, and achieves commercial use. Standard.
A systematic study of the butt growth of metal organic vapor deposition (MOCVD) was carried out. The effects of dielectric film etching and InP etching on the final butt quality were discussed. The wet etching strategy was improved, the dry etching parameters were adjusted, and the high quality of the butt material was finally completed. A new process sequence of pre gratings made and then butted growth has been developed. After the docking growth process, the surface of the active region surface is depressed relative to the passive area, and the nano imprint technology is difficult to implement in the active region. A new technology is used to complete the preparation of the high quality monolithic integrated epitaxial material.
A plasma induced quantum well hybrid monolithic integrated process is systematically studied. A plasma induced quantum well hybrid method based on gray mask is proposed, which realizes the transverse integration of multiple bandgap and continuous band gap on the same epitaxial film. The plasma induced quantum well mixing degree is discussed in detail. Influence.
A new self aligned photolithography process for a variety of waveguide structures in a monolithic integrated device is studied. A new self aligned photolithography process is proposed. By using the photoresist to grow silica, and the lift-off process is used to peel the silicon dioxide, a variety of removal methods have been realized, and a variety of waveguide structures have been completed. High quality production of chip integration.
With the support of the previous theoretical design and relevant supporting technology research, various discrete devices used for integration include 16 channel 1550nm band dense wavelength division multiplexing (DWDM) array lasers, 4 channel 1310nm band rough wavelength division multiplexing (CWDM) array lasers, 4 channel InP based MMI couplers, and 16 channel InP based AWG devices. X ray diffraction (XRD) and photofluorescence (PL) were used to analyze the influence of the fabrication process of nano imprinted grating on the quantum well epitaxy film, and the influence of the nano imprinted grating technology on the life of DFB semiconductor laser was studied.
On the basis of the previous theoretical design, related matching process research and the fabrication of discrete devices, a monolithic integrated light source device for the 4 channel DFB array laser monolithic integrated MMI coupler is completed. The average threshold of the device is less than 10mA and the side touch inhibition ratio is greater than 50dB. to complete the monolithic integrated AWG combiner of the DFB array laser with 16 channels. When the light source is made, the spectral edge suppression ratio of the device is greater than 40dB, the channel spacing is 1.6nnm, and the root mean square error is less than 0.1nnm.

【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2014
【分類號】：TN929.1

【參考文獻(xiàn)】

相關(guān)期刊論文 前2條

1 王禮廣;蔡放;熊岳山;;五對角線性方程組追趕法[J];南華大學(xué)學(xué)報(bào)(自然科學(xué)版);2008年01期

2 王桓;朱洪亮;賈凌慧;陳向飛;孔端花;王列松;張偉;趙玲娟;王圩;;Application of sampled grating to control the lasing wavelength in complex-coupled DFB laser[J];Chinese Physics B;2009年07期

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本文編號：1848204