發(fā)布時(shí)間：2018-02-12 20:23

  本文關(guān)鍵詞： 智能照明 開關(guān)電源 LDMOS VDMOS IGBT　出處：《廈門大學(xué)》2014年碩士論文　論文類型：學(xué)位論文

【摘要】：開關(guān)電源作為電子設(shè)備的動力之源,向著高效率、高功率因數(shù)、低成本的方向發(fā)展；核心元件高壓功率開關(guān)器件是影響開關(guān)電源的效率與可靠性的主要因素。因此對開關(guān)電源電路設(shè)計(jì)及其高壓功率器件的研究具有現(xiàn)實(shí)意義。 本文首先針對LED的工作特性,創(chuàng)建驅(qū)動IC、變壓器的PSpice模型和建立電路仿真系統(tǒng),采用原邊控制原理來實(shí)現(xiàn)恒流、恒壓輸出,完成反激式LED驅(qū)動開關(guān)電源。其次針對高壓功率開關(guān)器件進(jìn)行研究：基于RESURF原理設(shè)計(jì)了一款能夠滿足耐壓大于600V的LDMOS,應(yīng)用到LED驅(qū)動芯片的高低壓集成電路的制備中；為了提高開關(guān)電源系統(tǒng)工作頻率與效率,設(shè)計(jì)完成了一款開關(guān)速度快的VDMOS;對傳統(tǒng)的Trench-NPT-IGBT器件設(shè)計(jì)進(jìn)行優(yōu)化改進(jìn),設(shè)計(jì)一款具有高可靠性的1200V IGBT。 論文工作的創(chuàng)新點(diǎn)體現(xiàn)在： (1)在LDMOS設(shè)計(jì)中,加入p-top降場層、P埋層、N-buffer層,提高了漂移區(qū)參雜濃度,降低了比導(dǎo)通電阻,對影響器件特性的參數(shù)Ld、Lf、Lp、LPBL進(jìn)行優(yōu)化,結(jié)合現(xiàn)有BCD工藝給出一套LDMOS器件研制的工藝方案。 (2)在VDMOS設(shè)計(jì)中,采用高能離子注入方法降低橫向擴(kuò)散程度,獲得更短有效柵長,減小反向傳輸電容,提高開關(guān)速度；同時(shí)利用JFET注入來解決導(dǎo)通電阻增加的矛盾,實(shí)現(xiàn)VDMOS的Xjp、DCS、LW、LP參數(shù)的優(yōu)化設(shè)計(jì)。 (3)在Trench-NPT-IGBT設(shè)計(jì)中,引入溝槽側(cè)邊多晶硅電極,獲得逆向電場的方法來改善溝槽柵底部電場累積的缺點(diǎn),并對溝槽側(cè)邊多晶硅電極的寬度、深度、電壓參數(shù)優(yōu)化設(shè)計(jì),獲得具有擊穿電壓高和通態(tài)壓降低的器件結(jié)構(gòu)。 另外,還針對開關(guān)電源及高壓功率器件的具體應(yīng)用,設(shè)計(jì)一套分布式LED智能照明控制系統(tǒng)方案,并完成相應(yīng)的硬件電路及電路模塊開發(fā)。
[Abstract]:As the power source of electronic equipment, switching power supply is developing towards the direction of high efficiency, high power factor and low cost. The high voltage power switch device of the core element is the main factor that affects the efficiency and reliability of the switching power supply, so it is of practical significance to study the circuit design of the switching power supply and the high voltage power device. In this paper, first of all, according to the working characteristics of LED, the PSpice model of driving ICand transformer and the circuit simulation system are established. The principle of original edge control is used to realize the constant current and constant voltage output. The flyback LED drive switching power supply is completed. Secondly, the high voltage power switch device is studied. Based on the principle of RESURF, a LDMOS is designed which can satisfy the withstand voltage more than 600V and is applied to the fabrication of the high and low voltage integrated circuit of the LED driver chip. In order to improve the frequency and efficiency of switching power supply system, a VDMOS with high switching speed is designed, and the traditional Trench-NPT-IGBT device design is optimized and improved to design a 1200V IGBT with high reliability. The innovative points of the thesis work are as follows:. 1) in the design of LDMOS, adding p-top down-field layer / P buried layer and N-buffer layer increases the drift zone impurity concentration, reduces the specific on-resistance, optimizes the parameters that affect the characteristics of the device, and gives a set of process scheme for the development of LDMOS device combined with the existing BCD process. In the design of VDMOS, the high energy ion implantation is used to reduce the transverse diffusion degree, obtain shorter effective gate length, reduce the reverse transfer capacitance, and improve the switching speed. At the same time, JFET implantation is used to solve the contradiction of increasing on resistance. The optimization design of VDMOS parameters is realized. In the design of Trench-NPT-IGBT, the method of reverse electric field is introduced to improve the electric field accumulation at the bottom of the groove gate, and the width, depth and voltage parameters of the polysilicon electrode on the side of the groove are optimized. The device structure with high breakdown voltage and low on-state voltage is obtained. In addition, a distributed LED intelligent lighting control system is designed for the specific applications of switching power supply and high voltage power devices, and the corresponding hardware circuits and circuit modules are developed.
【學(xué)位授予單位】：廈門大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TN86

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本文編號：1506481