MEMS開關(guān)關(guān)鍵技術(shù)研究
本文關(guān)鍵詞:MEMS開關(guān)關(guān)鍵技術(shù)研究 出處:《西安電子科技大學(xué)》2013年博士論文 論文類型:學(xué)位論文
更多相關(guān)文章: 微機電系統(tǒng) 加速度開關(guān) 黏著接觸 彈性接觸 塑性接觸 電接觸
【摘要】:MEMS開關(guān)中,受表面效應(yīng)的影響,黏著力對開關(guān)觸點的工作可靠性有極大的影響。本文以固體力學(xué)、彈塑性力學(xué)和黏著力學(xué)為基礎(chǔ),建立觸點微/納米量級的彈性和塑性接觸模型;基于量子力學(xué)研究了觸點的隧道電流機理,建立了在彈-塑性變形條件下粗糙表面觸點間的隧道電流和接觸電阻計算模型;基于機電動力學(xué)原理設(shè)計了一種永磁微加速度開關(guān)。研究內(nèi)容如下: (1)基于Lennard-Jones勢能定律和Hamaker假設(shè),通過積分方法得到球體與平面間的黏著力,結(jié)合經(jīng)典彈性理論計算了納米級剛性球體和彈性平面的黏著接觸變形,對常見金屬觸點材料在彈性接觸時接觸力、接觸變形、接觸面積等參數(shù)的變化規(guī)律進行了仿真分析。 (2)對污染觸點進行了接觸研究,模擬分析了金表面沉積碳膜后,觸點的彈性接觸力、接觸變形、接觸面積等參數(shù)的變化規(guī)律。 (3)建立了表面黏著接觸應(yīng)力計算模型。采用von Mises強度理論研究彈性平面屈服問題,得到了塑性變形區(qū)域和塑性變形量。 (4)給出了彈性和塑性區(qū)域的變形準則,基于該準則模擬分析球體下壓過程中球-面間隙和接觸面積的變化規(guī)律。以Au材料為例,計算了球體下壓過程中材料的應(yīng)力-應(yīng)變關(guān)系并得到Au材料的微觀屈服極限。 (5)建立了觸點塑性接觸模型,基于該模型對清潔和污染觸點接觸過程中接觸壓力、接觸應(yīng)力、表面變形量及接觸面積等參數(shù)的變化規(guī)律進行了仿真分析,得到了接觸表面的引力區(qū)域、斥力區(qū)域;彈性變形區(qū)域和塑性變形區(qū)域。 (6)基于隧道電流密度計算公式,推導(dǎo)了剛性球形觸點趨近剛性平面時隧道電流和接觸電阻的計算公式,并進一步給出了剛性接觸時觸點的收縮面積和截面收縮率隨觸點間隙的變化規(guī)律。 (7)建立了剛性球形觸點和彈-塑性平面電接觸的計算模型,研究了彈性和塑性變形對觸點的接觸力、隧道電流、接觸電阻的影響。 (8)將觸點表面微丘的曲率半徑和高度誤差量按照正態(tài)分布選取,建立了粗糙表面電接觸模型;研究了微丘半徑,高度誤差和微丘數(shù)量對接觸電阻的影響。得到典型觸點接觸電阻隨接觸力及接觸壓強變化的規(guī)律。 (9)給出一種永磁微加速度開關(guān)的結(jié)構(gòu)設(shè)計方案,提出了該開關(guān)的靜態(tài)設(shè)計原則。建立了微型運動平板間空氣阻尼的計算模型。推導(dǎo)了MEMS微平面機構(gòu)所受的空氣阻尼力和阻尼系數(shù)的解析公式。 (10)基于典型粗糙表面電接觸計算模型,給出了觸點穩(wěn)定工作時接觸壓力-接觸電阻和電流-電壓關(guān)系曲線。 (11)建立了開關(guān)動力學(xué)分析模型,對開關(guān)在激勵下的工作響應(yīng)進行了仿真。
[Abstract]:Based on the solid mechanics , the elastic - plastic mechanics and the adhesive force theory , the elastic and plastic contact model of the contact micro / nano scale is established . Based on the quantum mechanics , the tunneling current and the contact resistance calculation model between the contact points are established . A permanent magnet micro - acceleration switch is designed based on the principle of the machine electrodynamics . The research contents are as follows : ( 1 ) Based on Lennard - Jones potential energy law and Hamaker assumption , the adhesive force between the sphere and the plane is obtained by integral method . According to the classical elastic theory , the adhesion contact deformation of the nano - rigid sphere and elastic plane is calculated , and the rule of contact force , contact deformation and contact area of the common metal contact material is simulated and analyzed . ( 2 ) The contact study of pollution contact is carried out , and the law of elastic contact force , contact deformation and contact area of the contact is simulated after the carbon film has been deposited on the gold surface . ( 3 ) The calculation model of contact stress on the surface is established . The yield problem of elastic plane is studied by von mises strength theory , and the plastic deformation area and plastic deformation amount are obtained . ( 4 ) The deformation criterion of elastic and plastic regions is given . Based on the criterion , the rule of ball - surface gap and contact area in the process of ball pressing is simulated . Taking Au material as an example , the stress - strain relationship of the material in the process of pressing the ball is calculated and the micro yield limit of Au material is obtained . ( 5 ) The contact plastic contact model is established . Based on the model , the contact pressure , contact stress , surface deformation amount and contact area are simulated and analyzed . The contact surface ' s attractive area , repulsive force area , elastic deformation area and plastic deformation area are obtained . ( 6 ) Based on the calculation formula of tunneling current density , the calculation formula of tunnel current and contact resistance in rigid spherical contact approaching rigid plane is deduced , and the change law of the contact ' s shrinkage area and the cross - section shrinkage ratio with the contact gap is further given . ( 7 ) The calculation model of electrical contact between rigid spherical contact and elastic - plastic plane is established , and the influence of elastic and plastic deformation on the contact force , tunnel current and contact resistance of the contact is studied . ( 8 ) selecting the radius of curvature and the height error of the microhills of the contact surface according to the normal distribution , establishing a rough surface electrical contact model , and researching the influence of the micro - dome radius , the height error and the number of the microhills on the contact resistance , and obtaining the rule of the contact resistance of the typical contact with the contact force and the contact pressure . ( 9 ) The design scheme of the permanent magnet micro - acceleration switch is given , and the principle of static design of the switch is put forward . The calculation model of the air damping between the micro - motion plates is established . The analytical formula of the damping force and damping coefficient of the MEMS micro - plane mechanism is deduced . ( 10 ) Based on the typical rough surface electrical contact calculation model , the contact pressure - contact resistance and the current - voltage relationship curve of the contact stability operation are given . ( 11 ) The model of switch dynamics is established , and the working response of the switch under excitation is simulated .
【學(xué)位授予單位】:西安電子科技大學(xué)
【學(xué)位級別】:博士
【學(xué)位授予年份】:2013
【分類號】:TH-39
【參考文獻】
相關(guān)期刊論文 前10條
1 張威,張大成,王陽元;MEMS概況及發(fā)展趨勢[J];微納電子技術(shù);2002年01期
2 黃見秋,黃慶安;表面粘連效應(yīng)對接觸式微開關(guān)接觸電阻的影響[J];半導(dǎo)體學(xué)報;2005年06期
3 陳光焱;楊黎明;;一種高g值微沖擊開關(guān)的研制[J];爆炸與沖擊;2007年02期
4 亢春梅,曹金名,劉光輝;國外MEMS技術(shù)的現(xiàn)狀及其在軍事領(lǐng)域中的應(yīng)用[J];傳感器技術(shù);2002年06期
5 楊會玲;楊會偉;王軍;;高g_n值微加速度開關(guān)設(shè)計[J];傳感器與微系統(tǒng);2009年05期
6 宋金國;量子隧穿中的等效勢壘[J];物理與工程;2001年02期
7 王亞珍,朱文堅;微機電系統(tǒng)(MEMS)技術(shù)及發(fā)展趨勢[J];機械設(shè)計與研究;2004年01期
8 孫雅洲,梁迎春,程凱;微米和中間尺度機械制造[J];機械工程學(xué)報;2004年05期
9 林忠華,胡國清,劉文艷,張慧杰;微機電系統(tǒng)的研究與展望[J];微電子學(xué);2005年01期
10 賈金鋒,蓋崢,楊威生;用掃描隧道顯微鏡測量局域功函數(shù)[J];物理學(xué)報;1997年08期
,本文編號:1403466
本文鏈接:http://sikaile.net/kejilunwen/jixiegongcheng/1403466.html