Resistive Switching Behavior of Ag/Mg 0.2 Zn 0.8 O/ZnMn 2 O
發(fā)布時間：2024-01-19 15:26
The Ag/Mg0.2Zn0.8O/ZnMn2O4/p+-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties were investigated.A distinct bipolar resistive switching behavior of the devices was observed at room temperature.The resistance ratio RHRS/RLRS of high resistance state and low resistance state is as large a...
【文章頁數(shù)】：4 頁
本文編號：3880040
【文章頁數(shù)】：4 頁
本文編號：3880040
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