Non-volatile optical memory in vertical van der Waals hetero
發(fā)布時(shí)間:2022-10-09 12:24
Emulating synaptic plasticity in an artificial neural network is crucial to mimic the basic functions of the human brain.In this work, we report a new optoelectronic resistive random access memory(ORRAM) in a three-layer vertical heterostructure of graphene/Cd Se quantum dots(QDs)/graphene, which shows non-volatile multi-level optical memory under optical stimuli,giving rise to light-tunable synaptic behaviors. The optical non-volatile storage time is up to ~450 s. The device realizes the functi...
【文章頁數(shù)】:5 頁
【參考文獻(xiàn)】:
期刊論文
[1]Surface traps-related nonvolatile resistive switching memory effect in a single SnO2:Sm nanowire[J]. Huiying Zhou,Haiping Shi,Baochang Cheng. Journal of Semiconductors. 2020(01)
[2]Resistive random access memory and its applications in storage and nonvolatile logic[J]. Dongbin Zhu,Yi Li,Wensheng Shen,Zheng Zhou,Lifeng Liu,Xing Zhang. Journal of Semiconductors. 2017(07)
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本文編號:3688632
【文章頁數(shù)】:5 頁
【參考文獻(xiàn)】:
期刊論文
[1]Surface traps-related nonvolatile resistive switching memory effect in a single SnO2:Sm nanowire[J]. Huiying Zhou,Haiping Shi,Baochang Cheng. Journal of Semiconductors. 2020(01)
[2]Resistive random access memory and its applications in storage and nonvolatile logic[J]. Dongbin Zhu,Yi Li,Wensheng Shen,Zheng Zhou,Lifeng Liu,Xing Zhang. Journal of Semiconductors. 2017(07)
[3]基于鍺硅異質(zhì)納米晶的非易失浮柵存儲器的存儲特性[J]. 閭錦,陳裕斌,左正,施毅,濮林,鄭有炓. 半導(dǎo)體學(xué)報(bào). 2008(04)
本文編號:3688632
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