Charge transport and bipolar switching mechanism in a Cu/HfO
發(fā)布時間：2021-10-24 23:05
Bipolar resistance switching characteristics are investigated in Cu/sputtered-HfO2/Pt structure in the application of resistive random access memory（RRAM）.The conduction mechanism of the structure is characterized to be SCLC conduction.The dependence of resistances in both high resistance state（HRS） and low resistance state（LRS） on the temperature and device area are studied.Then,the composition and chemical bonding state of Cu and Hf at Cu/HfO2 interface region are analyze...
【文章來源】：Chinese Physics B. 2016,25(11)EISCI
【文章頁數(shù)】：4 頁
本文編號：3456162
【文章來源】：Chinese Physics B. 2016,25(11)EISCI
【文章頁數(shù)】：4 頁
本文編號：3456162
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