Negative capacitance FinFET（NC-FinFET） has a promising developmental prospect due to its superior performance in SS < 60 mV/dec（subthreshold swing）, especially in SRAM. Noise margin is an important metric to evaluate the performance for SRAM, together with static leakage, read speed, etc. In this paper, we study the effects of the variation of ferroelectric material（thickness, polarization）, FinFET critical physical parameters（fin number, channel length） and some ambient factors（working tempe... 

【文章來源】：Journal of Semiconductors. 2020,41(06)CSCD

【文章頁數(shù)】：6 頁


本文編號(hào)：3340768