Asymmetric resistive switching processes were observed in W:Al O x/WO y bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under-1.1 V bias, while the SET speed is in the range of tens of nanoseconds under 1.2 V bias. Electrical measurements with different pulse conditions and different temperatures were carried out to understand these significant differences in switching time. A redox reaction model in the W:Al O x/WO y devic... 

【文章來(lái)源】：Chinese Physics B. 2015,24(05)EI

【文章頁(yè)數(shù)】：5 頁(yè)


本文編號(hào)：3340371