【摘要】：本文通過將供電電壓降低到近閾值區(qū)域?qū)崿F(xiàn)低功耗的目的.現(xiàn)有標(biāo)準(zhǔn)6T-SRAM在近閾值電壓下的性能非常差,且受工藝波動(dòng)的影響很大.因此,本文提出了一種新型的8T-SRAM,與近閾值電壓下的6管單元相比,其靜態(tài)功耗基本相同,讀噪聲容限也增加了一倍.因此使該新型8管單元在實(shí)現(xiàn)低功耗的基礎(chǔ)上保證了讀寫的穩(wěn)定性.另外針對(duì)工藝波動(dòng)對(duì)讀噪聲容限的影響進(jìn)行分析,與6T-SRAM相比,新型8T-SRAM受工藝波動(dòng)的影響更小.
[Abstract]:In this paper, the purpose of low power consumption is achieved by reducing the power supply voltage to the near threshold region. The performance of the existing standard 6T-SRAM at near threshold voltage is very poor, and it is greatly affected by the process fluctuation. Therefore, a new type of 8T 鈮，

本文編號(hào)：2481717