非揮發(fā)性電荷俘獲存儲器設計及其電離輻射可靠性研究
發(fā)布時間：2019-04-24 20:54
【摘要】：宇宙環(huán)境中存在的總劑量輻射及單粒子輻射會導致閃存芯片存儲單元信息丟失和閃存芯片功能失效�；诜至㈦姾纱鎯C制的電荷俘獲型SONOS存儲器件與傳統(tǒng)浮柵器件相比具有更好的抗輻射能力，在空間環(huán)境中具有廣闊的應用前景。本論文對SONOS存儲單元及閃存電路的輻射特性、退化機理以及加固設計方法進行了深入的研究，研制出了滿足空間應用要求的抗輻射非揮發(fā)閃存芯片。 論文基于自主設計的0.13微米SONOS存儲單元及4Mb存儲器電路對SONOS存儲器的輻射特性、退化機理以及加固設計方法進行了研究。對SONOS存儲單元輻射特性的研究表明，存儲單元在總劑量輻射下的退化機制包括存儲電荷丟失導致的閾值電壓漂移和寄生晶體管效應導致的漏電流增加；結合存儲器電路讀取操作的輻射特性研究指出，總劑量輻射下讀取操作失效是由于編程態(tài)存儲器件的閾值電壓漂移所導致；結合高壓產生電路和高壓通道電路的輻射特性研究指出，存儲器擦寫操作失效是由于存儲陣列和高壓通道的漏電流增加并超過了電荷泵電路的電流驅動能力所導致。針對單粒子效應的研究表明SONOS存儲器具有良好的抗單粒子翻轉能力，但局部閂鎖效應會導致電源電流增大和存儲器功能失效。在此基礎上，論文從存儲器的器件工藝、電路設計和版圖設計三個層面采用針對性的系統(tǒng)加固設計方法研制出了抗輻射的4Mb閃存芯片，實測結果表明其抗總劑量輻射能力大于100krad(Si)，抗單粒子閂鎖閾值大于42MeV cm2/mg。 論文同時基于部分耗盡絕緣體上硅(PD-SOI)工藝提出一種局部硅氧化隔離與深槽隔離相結合的十字交叉隔離技術，可以完全隔斷總劑量輻射引起的漏電，并顯著提高存儲器電路版圖的利用效率，實現(xiàn)SOI技術與高密度SONOS存儲器電路的集成。基于上述方法研制出了256Kb抗輻射EEPROM閃存芯片，實測結果表明其在TID為100krad(Si)時漏電流無明顯增加，抗瞬時輻射效應大于3e11rad(Si)/s，，抗單粒子閂鎖能力強，驗證了上述方法的有效性。 論文還對新型三維SONOS存儲器件的可靠性及輻射特性進行了研究，探索了其可靠性退化機理和隧穿介質優(yōu)化制備工藝。研究結果表明柵極全環(huán)繞結構3D-SONOS器件可獲得更大的閾值電壓窗口并抑制輻射導致的泄漏電流。
[Abstract]:The total dose radiation and the single-particle radiation present in the cosmic environment can lead to the loss of memory cell information and the failure of the flash memory chip. The charge-trapping SONOS memory device based on the discrete charge storage mechanism has better anti-radiation capability compared with the conventional floating gate device, and has wide application prospect in the space environment. In this paper, the radiation characteristics, degradation mechanism and reinforcement design method of SONOS memory cell and flash memory circuit are studied deeply, and the radiation-resistant non-volatile flash memory chip which meets the requirements of space application is developed. The radiation characteristics, the degradation mechanism and the reinforcement design method of the SONOS memory are studied based on the self-designed 0.13 micron SONOS memory cell and the 4Mb memory circuit. The study of the radiation characteristics of SONOS memory cell shows that the degradation mechanism of the memory cell under the total dose radiation includes the increase of the leakage current caused by the threshold voltage drift and the parasitic transistor effect caused by the storage charge loss, and the radiation characteristic study of the read operation in combination with the memory circuit. the read operation failure at the total dose radiation is due to the threshold voltage drift of the programmed memory device; the radiation characteristics of the combined high voltage generation circuit and the high voltage channel circuit refer to the failure of the memory erase operation is that the leakage current of the memory array and the high voltage channel is increased and exceeds the current driving capability of the charge pump circuit, The results show that the SONOS memory has good anti-single-particle turn-over capability, but the local self-locking effect can lead to the increase of the power current and the loss of the memory function. On the basis of this, a 4-Mb flash memory chip with radiation resistance was developed from three aspects of device technology, circuit design and layout design of memory. The results show that the anti-radiation capacity is more than 100 krad (Si ). The threshold of the anti-single-particle anti-lock is greater than 42 MeV cm2/ m. G. At the same time, based on a partial depletion-insulator-on-insulator (PD-SOI) process, a cross-crossing isolation technique combining local silicon oxidation isolation and deep trench isolation is proposed, which can completely block the leakage caused by the total dose radiation, and obviously improve the current of the memory circuit layout. Using efficiency to realize SOI technology and high-density SONOS memory circuit The results show that the leakage current is not obviously increased when the TID is 100 krad (Si), the anti-transient radiation effect is more than 3e11rad (Si)/ s, the anti-single-particle self-locking ability is strong, and the above-mentioned method is verified. The paper also studies the reliability and radiation characteristics of the new three-dimensional SONOS memory device. The results show that the gate-wide surround-structure 3D-SONOS device can obtain a larger threshold voltage window and suppress the radiation.
【學位授予單位】：清華大學
【學位級別】：博士
【學位授予年份】：2013
【分類號】：TP333
本文編號：2464777
[Abstract]:The total dose radiation and the single-particle radiation present in the cosmic environment can lead to the loss of memory cell information and the failure of the flash memory chip. The charge-trapping SONOS memory device based on the discrete charge storage mechanism has better anti-radiation capability compared with the conventional floating gate device, and has wide application prospect in the space environment. In this paper, the radiation characteristics, degradation mechanism and reinforcement design method of SONOS memory cell and flash memory circuit are studied deeply, and the radiation-resistant non-volatile flash memory chip which meets the requirements of space application is developed. The radiation characteristics, the degradation mechanism and the reinforcement design method of the SONOS memory are studied based on the self-designed 0.13 micron SONOS memory cell and the 4Mb memory circuit. The study of the radiation characteristics of SONOS memory cell shows that the degradation mechanism of the memory cell under the total dose radiation includes the increase of the leakage current caused by the threshold voltage drift and the parasitic transistor effect caused by the storage charge loss, and the radiation characteristic study of the read operation in combination with the memory circuit. the read operation failure at the total dose radiation is due to the threshold voltage drift of the programmed memory device; the radiation characteristics of the combined high voltage generation circuit and the high voltage channel circuit refer to the failure of the memory erase operation is that the leakage current of the memory array and the high voltage channel is increased and exceeds the current driving capability of the charge pump circuit, The results show that the SONOS memory has good anti-single-particle turn-over capability, but the local self-locking effect can lead to the increase of the power current and the loss of the memory function. On the basis of this, a 4-Mb flash memory chip with radiation resistance was developed from three aspects of device technology, circuit design and layout design of memory. The results show that the anti-radiation capacity is more than 100 krad (Si ). The threshold of the anti-single-particle anti-lock is greater than 42 MeV cm2/ m. G. At the same time, based on a partial depletion-insulator-on-insulator (PD-SOI) process, a cross-crossing isolation technique combining local silicon oxidation isolation and deep trench isolation is proposed, which can completely block the leakage caused by the total dose radiation, and obviously improve the current of the memory circuit layout. Using efficiency to realize SOI technology and high-density SONOS memory circuit The results show that the leakage current is not obviously increased when the TID is 100 krad (Si), the anti-transient radiation effect is more than 3e11rad (Si)/ s, the anti-single-particle self-locking ability is strong, and the above-mentioned method is verified. The paper also studies the reliability and radiation characteristics of the new three-dimensional SONOS memory device. The results show that the gate-wide surround-structure 3D-SONOS device can obtain a larger threshold voltage window and suppress the radiation.
【學位授予單位】：清華大學
【學位級別】：博士
【學位授予年份】：2013
【分類號】：TP333
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