抗輻射SRAM的研究與設(shè)計
發(fā)布時間：2019-02-19 18:30
【摘要】：隨著集成電路制造工藝的進步、特征尺寸的減小、工作電壓的降低和工作頻率的提高,各種輻射效應(yīng)對半導(dǎo)體器件的影響變得越來越嚴重。靜態(tài)隨機存儲器(SRAM)因具有速度快、功耗低等優(yōu)點,被作為高速緩存廣泛應(yīng)用于航空航天領(lǐng)域,而空間中大量的高能粒子嚴重影響了SRAM的可靠性,對各種航天器的正常運行構(gòu)成極大的威脅,因此,研究SRAM的抗輻射加固技術(shù)具有重大意義。本文在研究單粒子效應(yīng)產(chǎn)生機理和已有加固技術(shù)的基礎(chǔ)上,設(shè)計了一種新型的抗輻射加固存儲單元——延時自恢復(fù)邏輯(DSRL),該單元同時對單粒子翻轉(zhuǎn)(SEU)、單粒子瞬態(tài)(SET)和單粒子多節(jié)點翻轉(zhuǎn)(SEMNU)三種單粒子效應(yīng)進行了加固,并使用該單元以全定制方法設(shè)計了一款4Kbit大小的抗輻射加固SRAM。本文的主要工作如下:1.對空間輻射粒子的來源做了研究,詳細分析了SEU、SET和SEMNU這三種單粒子效應(yīng)的產(chǎn)生機理,總結(jié)了SRAM的常用加固技術(shù)以及不足之處。2.設(shè)計了一種新型的抗輻射存儲單元DSRL,該單元基于SRL結(jié)構(gòu)采用讀寫路徑分離設(shè)計,并加入特殊的延時單元,使得該存儲單元不僅可以在全狀態(tài)下對SEU免疫,而且在讀寫狀態(tài)時可濾除低于1ns的SET脈沖,并且對SEMNU具有較好的加固效果。對DSRL單元晶體管的參數(shù)做了詳細的理論計算,模擬驗證結(jié)果顯示滿足設(shè)計要求。3.設(shè)計了與DSRL單元匹配的外圍電路并進行相應(yīng)的加固,如在行列譯碼器中加入濾波單元對SET進行加固;對靈敏放大器進行了改進,使其靈敏度和可靠性更高;對存儲單元進行了版圖加固設(shè)計,拉大了SRAM單元敏感節(jié)點間的距離,并對NMOS管和PMOS管分別添加保護環(huán),對SEMNU做了進一步的加固。最終以全定制方法完成整個SRAM的原理圖設(shè)計和版圖設(shè)計。4.使用AMS軟件搭建數(shù)模混合仿真平臺對設(shè)計的SRAM進行了完備的功能驗證,并建立單粒子效應(yīng)模型及評價體系,提取版圖后的寄生參數(shù),對DSRL單元的加固效果做了充分的后仿真驗證。
[Abstract]:With the progress of IC manufacturing process, the decrease of characteristic size, the decrease of working voltage and the increase of working frequency, the effects of various radiation effects on semiconductor devices become more and more serious. Static random access memory (SRAM) is widely used in aerospace field because of its high speed and low power consumption. However, a large number of high-energy particles in space seriously affect the reliability of SRAM. It poses a great threat to the normal operation of various spacecraft, so it is of great significance to study the anti-radiation reinforcement technology of SRAM. In this paper, based on the study of the mechanism of single particle effect and the existing reinforcement technology, a new type of radiation resistant reinforcement memory cell, the delayed self-recovery logic (DSRL), is designed. The unit flips the single particle (SEU), at the same time. Single particle transient (SET) and single particle multi-node flip (SEMNU) are used to reinforce three kinds of single-particle effects. Using this element, an anti-radiation reinforcement SRAM. with the size of 4Kbit is designed by using the fully customized method. The main work of this paper is as follows: 1. In this paper, the origin of space radiation particles is studied, the mechanism of single particle effect of SEU,SET and SEMNU is analyzed in detail, and the common reinforcement techniques of SRAM and its shortcomings are summarized. 2. A novel anti-radiation storage unit (DSRL,) is designed, which is based on the SRL structure and is designed by the read-write path separation design, and the special delay unit is added, so that the memory unit can not only be immune to SEU in the whole state. In addition, the SET pulse below 1ns can be filtered out in reading and writing state, and it has better reinforcement effect on SEMNU. The parameters of DSRL unit transistors are calculated in detail, and the simulation results show that the parameters meet the design requirements. The peripheral circuit matching with the DSRL unit is designed and the corresponding reinforcement is carried out, for example, the filter unit is added to the column decoder to reinforce the SET, the sensitive amplifier is improved to make its sensitivity and reliability higher. The layout reinforcement design of the storage cell is carried out, the distance between the sensitive nodes of the SRAM unit is enlarged, and the protection rings are added to the NMOS tube and the PMOS tube, respectively, and the SEMNU is further strengthened. Finally complete the whole SRAM schematic design and layout design with the method of full customization. 4. The AMS software is used to build the digital-analog hybrid simulation platform to verify the function of the designed SRAM, and the single particle effect model and evaluation system are established to extract the parasitic parameters after layout. The reinforcement effect of DSRL element is fully verified by post-simulation.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TP333
本文編號：2426749
[Abstract]:With the progress of IC manufacturing process, the decrease of characteristic size, the decrease of working voltage and the increase of working frequency, the effects of various radiation effects on semiconductor devices become more and more serious. Static random access memory (SRAM) is widely used in aerospace field because of its high speed and low power consumption. However, a large number of high-energy particles in space seriously affect the reliability of SRAM. It poses a great threat to the normal operation of various spacecraft, so it is of great significance to study the anti-radiation reinforcement technology of SRAM. In this paper, based on the study of the mechanism of single particle effect and the existing reinforcement technology, a new type of radiation resistant reinforcement memory cell, the delayed self-recovery logic (DSRL), is designed. The unit flips the single particle (SEU), at the same time. Single particle transient (SET) and single particle multi-node flip (SEMNU) are used to reinforce three kinds of single-particle effects. Using this element, an anti-radiation reinforcement SRAM. with the size of 4Kbit is designed by using the fully customized method. The main work of this paper is as follows: 1. In this paper, the origin of space radiation particles is studied, the mechanism of single particle effect of SEU,SET and SEMNU is analyzed in detail, and the common reinforcement techniques of SRAM and its shortcomings are summarized. 2. A novel anti-radiation storage unit (DSRL,) is designed, which is based on the SRL structure and is designed by the read-write path separation design, and the special delay unit is added, so that the memory unit can not only be immune to SEU in the whole state. In addition, the SET pulse below 1ns can be filtered out in reading and writing state, and it has better reinforcement effect on SEMNU. The parameters of DSRL unit transistors are calculated in detail, and the simulation results show that the parameters meet the design requirements. The peripheral circuit matching with the DSRL unit is designed and the corresponding reinforcement is carried out, for example, the filter unit is added to the column decoder to reinforce the SET, the sensitive amplifier is improved to make its sensitivity and reliability higher. The layout reinforcement design of the storage cell is carried out, the distance between the sensitive nodes of the SRAM unit is enlarged, and the protection rings are added to the NMOS tube and the PMOS tube, respectively, and the SEMNU is further strengthened. Finally complete the whole SRAM schematic design and layout design with the method of full customization. 4. The AMS software is used to build the digital-analog hybrid simulation platform to verify the function of the designed SRAM, and the single particle effect model and evaluation system are established to extract the parasitic parameters after layout. The reinforcement effect of DSRL element is fully verified by post-simulation.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TP333
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