【摘要】：隨著集成電路制造工藝的進(jìn)步、特征尺寸的減小、工作電壓的降低和工作頻率的提高,各種輻射效應(yīng)對(duì)半導(dǎo)體器件的影響變得越來(lái)越嚴(yán)重。靜態(tài)隨機(jī)存儲(chǔ)器(SRAM)因具有速度快、功耗低等優(yōu)點(diǎn),被作為高速緩存廣泛應(yīng)用于航空航天領(lǐng)域,而空間中大量的高能粒子嚴(yán)重影響了SRAM的可靠性,對(duì)各種航天器的正常運(yùn)行構(gòu)成極大的威脅,因此,研究SRAM的抗輻射加固技術(shù)具有重大意義。本文在研究單粒子效應(yīng)產(chǎn)生機(jī)理和已有加固技術(shù)的基礎(chǔ)上,設(shè)計(jì)了一種新型的抗輻射加固存儲(chǔ)單元——延時(shí)自恢復(fù)邏輯(DSRL),該單元同時(shí)對(duì)單粒子翻轉(zhuǎn)(SEU)、單粒子瞬態(tài)(SET)和單粒子多節(jié)點(diǎn)翻轉(zhuǎn)(SEMNU)三種單粒子效應(yīng)進(jìn)行了加固,并使用該單元以全定制方法設(shè)計(jì)了一款4Kbit大小的抗輻射加固SRAM。本文的主要工作如下:1.對(duì)空間輻射粒子的來(lái)源做了研究,詳細(xì)分析了SEU、SET和SEMNU這三種單粒子效應(yīng)的產(chǎn)生機(jī)理,總結(jié)了SRAM的常用加固技術(shù)以及不足之處。2.設(shè)計(jì)了一種新型的抗輻射存儲(chǔ)單元DSRL,該單元基于SRL結(jié)構(gòu)采用讀寫路徑分離設(shè)計(jì),并加入特殊的延時(shí)單元,使得該存儲(chǔ)單元不僅可以在全狀態(tài)下對(duì)SEU免疫,而且在讀寫狀態(tài)時(shí)可濾除低于1ns的SET脈沖,并且對(duì)SEMNU具有較好的加固效果。對(duì)DSRL單元晶體管的參數(shù)做了詳細(xì)的理論計(jì)算,模擬驗(yàn)證結(jié)果顯示滿足設(shè)計(jì)要求。3.設(shè)計(jì)了與DSRL單元匹配的外圍電路并進(jìn)行相應(yīng)的加固,如在行列譯碼器中加入濾波單元對(duì)SET進(jìn)行加固;對(duì)靈敏放大器進(jìn)行了改進(jìn),使其靈敏度和可靠性更高;對(duì)存儲(chǔ)單元進(jìn)行了版圖加固設(shè)計(jì),拉大了SRAM單元敏感節(jié)點(diǎn)間的距離,并對(duì)NMOS管和PMOS管分別添加保護(hù)環(huán),對(duì)SEMNU做了進(jìn)一步的加固。最終以全定制方法完成整個(gè)SRAM的原理圖設(shè)計(jì)和版圖設(shè)計(jì)。4.使用AMS軟件搭建數(shù)�；旌戏抡嫫脚_(tái)對(duì)設(shè)計(jì)的SRAM進(jìn)行了完備的功能驗(yàn)證,并建立單粒子效應(yīng)模型及評(píng)價(jià)體系,提取版圖后的寄生參數(shù),對(duì)DSRL單元的加固效果做了充分的后仿真驗(yàn)證。
[Abstract]:With the progress of IC manufacturing process, the decrease of characteristic size, the decrease of working voltage and the increase of working frequency, the effects of various radiation effects on semiconductor devices become more and more serious. Static random access memory (SRAM) is widely used in aerospace field because of its high speed and low power consumption. However, a large number of high-energy particles in space seriously affect the reliability of SRAM. It poses a great threat to the normal operation of various spacecraft, so it is of great significance to study the anti-radiation reinforcement technology of SRAM. In this paper, based on the study of the mechanism of single particle effect and the existing reinforcement technology, a new type of radiation resistant reinforcement memory cell, the delayed self-recovery logic (DSRL), is designed. The unit flips the single particle (SEU), at the same time. Single particle transient (SET) and single particle multi-node flip (SEMNU) are used to reinforce three kinds of single-particle effects. Using this element, an anti-radiation reinforcement SRAM. with the size of 4Kbit is designed by using the fully customized method. The main work of this paper is as follows: 1. In this paper, the origin of space radiation particles is studied, the mechanism of single particle effect of SEU,SET and SEMNU is analyzed in detail, and the common reinforcement techniques of SRAM and its shortcomings are summarized. 2. A novel anti-radiation storage unit (DSRL,) is designed, which is based on the SRL structure and is designed by the read-write path separation design, and the special delay unit is added, so that the memory unit can not only be immune to SEU in the whole state. In addition, the SET pulse below 1ns can be filtered out in reading and writing state, and it has better reinforcement effect on SEMNU. The parameters of DSRL unit transistors are calculated in detail, and the simulation results show that the parameters meet the design requirements. The peripheral circuit matching with the DSRL unit is designed and the corresponding reinforcement is carried out, for example, the filter unit is added to the column decoder to reinforce the SET, the sensitive amplifier is improved to make its sensitivity and reliability higher. The layout reinforcement design of the storage cell is carried out, the distance between the sensitive nodes of the SRAM unit is enlarged, and the protection rings are added to the NMOS tube and the PMOS tube, respectively, and the SEMNU is further strengthened. Finally complete the whole SRAM schematic design and layout design with the method of full customization. 4. The AMS software is used to build the digital-analog hybrid simulation platform to verify the function of the designed SRAM, and the single particle effect model and evaluation system are established to extract the parasitic parameters after layout. The reinforcement effect of DSRL element is fully verified by post-simulation.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TP333

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本文編號(hào)：2426749