【摘要】：隨著閃存存儲器和key-value存儲在企業(yè)應用中越來越普及,如何提升key-value存儲在閃存存儲器上的性能也成為了一個新興的研究熱點。閃存存儲器相比于傳統(tǒng)的硬盤提供了更快的隨機讀寫速度,但在重寫時,必須將已有的數(shù)據(jù)進行擦除。為了更方便的使用閃存存儲器來替換傳統(tǒng)硬盤,閃存存儲器添加了一層閃存轉換層來封裝底層特性。改進閃存轉換層的算法可以針對性的提高key-value存儲在閃存存儲器上的讀寫性能。 在基于對閃存轉換層的算法的相關研究和總結的基礎上,本文首先詳細分析了一種針對傳統(tǒng)數(shù)據(jù)庫的閃存轉換層算法-頁內日志法的讀寫性能。另外基于key-value存儲,本文分析并總結了頁內日志法存在的不足和改進方向。然后,本文提出了一種基于key-value存儲的閃存轉換層算法-組內更新法,在詳細描述了算法設計后分析比較了該算法和傳統(tǒng)的FTL算法以及頁內日志法的讀寫性能,并同時指出了算法的局限性及不足之處。 最終本文模擬并實現(xiàn)了閃存轉換層以及三種閃存轉換層算法,傳統(tǒng)的FTL算法,頁內日志法以及組內更新法,并通過三種不同的數(shù)據(jù)類型做了相關模擬仿真實驗,從實驗數(shù)據(jù)中驗證了頁內日志法性能總體高于傳統(tǒng)的FTL算法,而同時在key-value存儲的前提下,組內更新法的性能更好于頁內日志法。
[Abstract]:With the increasing popularity of flash memory and key-value storage in enterprise applications, how to improve the performance of key-value storage on flash memory has become a new research hotspot. Flash memory provides faster random read and write speed than traditional hard drives, but existing data must be erased when rewriting. In order to replace the traditional hard disk with flash memory more conveniently, flash memory adds a layer of flash memory conversion layer to encapsulate the underlying characteristics. The improved flash conversion layer algorithm can improve the read and write performance of key-value stored on flash memory. Based on the research and summary of the algorithms of flash conversion layer, this paper firstly analyzes the performance of in-page log algorithm, which is a conversion layer algorithm for traditional database. In addition, based on key-value storage, this paper analyzes and summarizes the shortcomings and improvement direction of the in-page log method. Then, this paper presents a flash memory conversion layer algorithm based on key-value storage, which is called intra-group update algorithm. After describing the algorithm design in detail, the performance of the algorithm is compared with that of the traditional FTL algorithm and in-page log method. At the same time, the limitations and shortcomings of the algorithm are pointed out. Finally, this paper simulates and implements the conversion layer of flash memory and three algorithms of conversion layer of flash memory, traditional FTL algorithm, in-page log method and intra-group updating method, and makes related simulation experiments through three different data types. The experimental results show that the performance of in-page log method is higher than that of traditional FTL algorithm, and the performance of intra-group updating method is better than that of in-page log method under the premise of key-value storage.
【學位授予單位】：浙江大學
【學位級別】：碩士
【學位授予年份】：2013
【分類號】：TP333

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相關期刊論文 前1條

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本文編號：2374946