【摘要】：當今在存儲系統(tǒng)中，主流的存儲器仍然是傳統(tǒng)的磁盤和近幾年廣泛使用的基于FLASH的固態(tài)硬盤，，磁盤因受限于內(nèi)部的機械結(jié)構(gòu)，讀寫性能較差，而固態(tài)硬盤雖然在性能上有了很大的改善，但寫數(shù)據(jù)之前必需要進行塊擦除操作，這成為其性能提升的很大阻礙。相變存儲器（PCRAM）是一種新型的非易失半導(dǎo)體存儲器，利用相變合金材料處于晶態(tài)和非晶態(tài)的不同電阻率大小來存儲二進制數(shù)據(jù)，相比于FLASH存儲器，具有更高的存儲密度，更快的讀寫速度，無需擦除操作和更長的壽命等優(yōu)點，是符合未來高性能需求的理想存儲器。 通過綜合SDRAM、FLASH和相變存儲器的特點，設(shè)計了以SDRAM和相變存儲器組成的混合主存系統(tǒng)，具有SDRAM的高速和相變存儲器非易失的特點；設(shè)計并實現(xiàn)了以相變存儲器和FLASH組成的混合外存儲系統(tǒng)，具有相變存儲器高速讀寫和FLASH大容量、低成本的特點。混合存儲器綜合使用了DDR3和PCIE接口技術(shù)，達到了高速數(shù)據(jù)傳輸?shù)哪康摹?根據(jù)相變存儲器的特點，設(shè)計了混合存儲器的硬件架構(gòu)，對混合存儲器的層次結(jié)構(gòu)、相變存儲器的陣列結(jié)構(gòu)給出了詳細的設(shè)計。對混合主存系統(tǒng)的邏輯結(jié)構(gòu)進行了闡述，設(shè)計并實現(xiàn)了混合外存儲系統(tǒng)的硬件電路。針對該混合存儲器，設(shè)計了一種基于CPLD的高效混合存儲控制器，在PEX8311接口芯片工作模式下，實現(xiàn)對存儲器的單周期訪問和DMA數(shù)據(jù)傳輸。在Linux操作系統(tǒng)下實現(xiàn)了混合存儲器的設(shè)備驅(qū)動程序，設(shè)計了主要的數(shù)據(jù)結(jié)構(gòu)和功能函數(shù)。最后對混合外存儲器進行了性能測試，并與傳統(tǒng)的磁盤和固態(tài)硬盤做了對比與分析。
[Abstract]:In today's storage system, the mainstream memory is still the traditional disk and the solid-state disk based on FLASH, which is widely used in recent years. The disk is limited by the internal mechanical structure, so it has poor read and write performance. Although the performance of solid state hard disk has been greatly improved, block erasure operation is required before writing data, which becomes a big obstacle to its performance improvement. Phase change memory (PCRAM) is a new type of nonvolatile semiconductor memory, which uses different resistivity of phase change alloy material in crystalline state and amorphous state to store binary data, which has higher storage density than FLASH memory. Faster reading and writing speed, no erasure operation and longer life are the ideal memory for high performance in the future. By synthesizing the characteristics of SDRAM flash and phase change memory, a hybrid main memory system composed of SDRAM and phase change memory is designed, which has the characteristics of high speed of SDRAM and non-volatile phase change memory. A hybrid external storage system composed of phase change memory and FLASH is designed and implemented, which has the characteristics of high speed reading and writing of phase change memory, large capacity of FLASH and low cost. Hybrid memory uses DDR3 and PCIE interface technology to achieve the purpose of high-speed data transmission. According to the characteristics of phase change memory, the hardware architecture of hybrid memory is designed. The hierarchical structure of hybrid memory and the array structure of phase change memory are designed in detail. The logic structure of the hybrid main memory system is described, and the hardware circuit of the hybrid external memory system is designed and implemented. For the hybrid memory, an efficient hybrid memory controller based on CPLD is designed. Under the working mode of the PEX8311 interface chip, the single-period access to the memory and the DMA data transmission are realized. The device driver of hybrid memory is implemented in Linux operating system, and the main data structure and function are designed. Finally, the performance of hybrid external memory is tested and compared with traditional disk and solid state hard disk.
【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2012
【分類號】：TP333

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本文編號：2179028