相變存儲器的工藝集成與優(yōu)化
發(fā)布時間：2018-08-09 19:16
【摘要】：相變隨機(jī)存儲器(Phase-Change Random Access Memory, PCRAM)是在納米時代發(fā)展起來的,利用硫系化合物半導(dǎo)體Ge2Sb2Te5等材料的快速阻變和可逆相變過程來實現(xiàn)高速、高密度和低功耗的非易失性存儲功能。相變存儲器作為新型的非易失性存儲器,其電學(xué)操作機(jī)理以及工藝集成方法與傳統(tǒng)的非易失性存儲器都有較為明顯的差異。因此在真正實現(xiàn)大規(guī)模量產(chǎn)之前,對工藝結(jié)構(gòu)的設(shè)計,工藝集成實施方法的優(yōu)化以及相變材料的遴選都極為重要。本文通過模擬計算與實際工藝實驗結(jié)果相結(jié)合,提出相變存儲工藝實施的優(yōu)化方案。主要包括以下幾點： 1.相變單元工藝結(jié)構(gòu)設(shè)計。對傳統(tǒng)電極型、環(huán)形電極型、側(cè)壁電極型等工藝結(jié)構(gòu)進(jìn)行分析與比較,從降低功耗、提高單元陣列密度和工藝可性等方面進(jìn)行考量,提出在不同技術(shù)節(jié)點下的用于量產(chǎn)的最優(yōu)化工藝方案。 2.相變薄膜的預(yù)處理以及工藝優(yōu)化。相變薄膜的淀積工藝是整個相變存儲器件制造的核心步驟。不同的相變薄膜在不同溫度下的工藝特性都不盡相同,而相變材料在高溫環(huán)境下與傳統(tǒng)半導(dǎo)體絕緣材料黏附力較差等問題又都普遍存在。本文通過對工藝生產(chǎn)過程中出現(xiàn)的相變材料分層、剝落等現(xiàn)象進(jìn)行分析研究,提出能夠為工藝生產(chǎn)所用的預(yù)處理方案。 3.電極單元的工藝制備。電極區(qū)域的工藝步驟是整個相變存儲器工藝制程中另一個核心技術(shù)。本文圍繞垂直側(cè)壁型電極淀積方案及傳統(tǒng)電極優(yōu)化方案展開研究,確立了完成兩種電極的工藝優(yōu)化方案及集成方法。 4.通過測試與失效分析相結(jié)合的方法分析相變單元失效的原因,并提出工藝優(yōu)化方案。
[Abstract]:Phase-Change Random Access Memory (PCRAM) is developed in the nanoscale era. The fast, high density and low power consumption nonvolatile storage function is realized by the rapid resistance and reversible phase transition process of a sulfur based compound semiconductor Ge2Sb2Te5. Phase change memory is used as a new nonvolatile memory. It is very important for the design of the process structure, the optimization of the process integration implementation method and the selection of the phase change materials before the real large-scale mass production. The optimization scheme of phase change storage technology is put forward.
The process structure of 1. phase transformation unit is designed. The traditional electrode type, ring electrode type and side wall electrode type are analyzed and compared. From the aspects of reducing power consumption, improving unit array density and technological availability, the optimal process scheme for mass production under different technical nodes is proposed.
2. the pretreatment and process optimization of phase change films. The deposition of phase change films is the core step in the manufacture of the whole phase change memory. The process characteristics of the different phase change films are different at different temperatures, and the poor adhesion of the phase change materials to the traditional semiconductor material under high temperature is common. In this paper, the phenomena such as delamination and spalling of phase change materials in the process of production are analyzed and studied, and a pretreatment plan which can be used for process production is put forward.
The process of the 3. electrode unit is prepared. The process step of the electrode region is another core technology in the process process of the whole phase change memory. This paper studies the vertical side wall electrode deposition and the traditional electrode optimization, and establishes the optimization scheme and integration method for the completion of the two kinds of electrodes.
4. analyze the causes of failure of phase change unit by combining test and failure analysis, and propose process optimization plan.
【學(xué)位授予單位】：復(fù)旦大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2013
【分類號】：TP333
本文編號：2175058
[Abstract]:Phase-Change Random Access Memory (PCRAM) is developed in the nanoscale era. The fast, high density and low power consumption nonvolatile storage function is realized by the rapid resistance and reversible phase transition process of a sulfur based compound semiconductor Ge2Sb2Te5. Phase change memory is used as a new nonvolatile memory. It is very important for the design of the process structure, the optimization of the process integration implementation method and the selection of the phase change materials before the real large-scale mass production. The optimization scheme of phase change storage technology is put forward.
The process structure of 1. phase transformation unit is designed. The traditional electrode type, ring electrode type and side wall electrode type are analyzed and compared. From the aspects of reducing power consumption, improving unit array density and technological availability, the optimal process scheme for mass production under different technical nodes is proposed.
2. the pretreatment and process optimization of phase change films. The deposition of phase change films is the core step in the manufacture of the whole phase change memory. The process characteristics of the different phase change films are different at different temperatures, and the poor adhesion of the phase change materials to the traditional semiconductor material under high temperature is common. In this paper, the phenomena such as delamination and spalling of phase change materials in the process of production are analyzed and studied, and a pretreatment plan which can be used for process production is put forward.
The process of the 3. electrode unit is prepared. The process step of the electrode region is another core technology in the process process of the whole phase change memory. This paper studies the vertical side wall electrode deposition and the traditional electrode optimization, and establishes the optimization scheme and integration method for the completion of the two kinds of electrodes.
4. analyze the causes of failure of phase change unit by combining test and failure analysis, and propose process optimization plan.
【學(xué)位授予單位】：復(fù)旦大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2013
【分類號】：TP333
【參考文獻(xiàn)】
相關(guān)期刊論文 前2條
1 梁爽;宋志棠;劉波;陳小剛;封松林;;相變存儲器器件單元測試系統(tǒng)[J];半導(dǎo)體技術(shù);2006年08期
2 劉波;宋志棠;封松林;;我國相變存儲器的研究現(xiàn)狀與發(fā)展前景[J];微納電子技術(shù);2007年02期
，本文編號：2175058
本文鏈接：http://sikaile.net/kejilunwen/jisuanjikexuelunwen/2175058.html
最近更新
教材專著
