利用Geant4模擬研究中子在半導(dǎo)體中引發(fā)的單粒子翻轉(zhuǎn)效應(yīng)
發(fā)布時(shí)間：2018-08-09 19:06
【摘要】：靜態(tài)隨機(jī)存儲(chǔ)器在反應(yīng)堆中子輻射環(huán)境中會(huì)發(fā)生單粒子翻轉(zhuǎn)(Single event upset,SEU)。鎢和銅等重金屬作為局部互聯(lián),在半導(dǎo)體中已得到廣泛應(yīng)用,這些重金屬對(duì)中子在半導(dǎo)體中的單粒子翻轉(zhuǎn)截面會(huì)產(chǎn)生影響。不同條件下單粒子翻轉(zhuǎn)截面與臨界能量的關(guān)系可作為器件設(shè)計(jì)和使用時(shí)的參考,利用Geant4對(duì)特定中子能譜在CMOS(Complementary metal oxide semiconductor)器件中的能量沉積進(jìn)行模擬,給出特定能譜下翻轉(zhuǎn)截面σ與臨界能量Ec的關(guān)系:σ=exp[-18.7×Ec-32.3],其中能量單位為Me V,截面單位為cm2。并且模擬了1-14 Me V的單能中子在含有互聯(lián)金屬鎢及不含鎢的CMOS中的沉積能量及單粒子翻轉(zhuǎn)截面,得出在1-14 Me V內(nèi)單粒子翻轉(zhuǎn)截面隨中子能量而增大,且鎢的存在會(huì)增加α粒子的產(chǎn)額,從而增大了1-3 Me V中子的單粒子翻轉(zhuǎn)截面,而對(duì)4-14 Me V中子基本不會(huì)產(chǎn)生影響。
[Abstract]:Static random access memory (SRAM) occurs in reactor neutron radiation environment with single particle flip (Single event upsetSEU). Heavy metals, such as tungsten and copper, have been widely used in semiconductors as local interconnections. These heavy metals have an effect on the single particle transition cross section of neutrons in semiconductors. The relationship between the critical energy and the flip cross section of the ordered particles under different conditions can be used as a reference for the design and application of the device. The energy deposition of a specific neutron spectrum in a CMOS (Complementary metal oxide semiconductor) device is simulated by Geant4. The relation between the transition cross section 蟽 and the critical energy E c under a specific energy spectrum is given: 蟽 exp [-18.7 脳 Ec-32.3], where the energy unit is me V and the cross section unit is cm 2. The deposition energy and single particle flip cross section of 1-14 me V single energy neutrons in CMOS containing and without tungsten are simulated. The results show that the single particle flip cross section increases with neutron energy in 1-14 me V. The presence of tungsten increases the yield of 偽 particles, thus increasing the single particle turnover cross section of 1-3 me V neutrons, but has little effect on 4-14 me V neutrons.
【作者單位】： 北京大學(xué)物理學(xué)院核物理與核技術(shù)國(guó)家重點(diǎn)實(shí)驗(yàn)室;西北核技術(shù)研究所;
【基金】：國(guó)家自然科學(xué)基金(No.11235008;No.10979010)資助~~
【分類(lèi)號(hào)】：TP333
本文編號(hào)：2175014
[Abstract]:Static random access memory (SRAM) occurs in reactor neutron radiation environment with single particle flip (Single event upsetSEU). Heavy metals, such as tungsten and copper, have been widely used in semiconductors as local interconnections. These heavy metals have an effect on the single particle transition cross section of neutrons in semiconductors. The relationship between the critical energy and the flip cross section of the ordered particles under different conditions can be used as a reference for the design and application of the device. The energy deposition of a specific neutron spectrum in a CMOS (Complementary metal oxide semiconductor) device is simulated by Geant4. The relation between the transition cross section 蟽 and the critical energy E c under a specific energy spectrum is given: 蟽 exp [-18.7 脳 Ec-32.3], where the energy unit is me V and the cross section unit is cm 2. The deposition energy and single particle flip cross section of 1-14 me V single energy neutrons in CMOS containing and without tungsten are simulated. The results show that the single particle flip cross section increases with neutron energy in 1-14 me V. The presence of tungsten increases the yield of 偽 particles, thus increasing the single particle turnover cross section of 1-3 me V neutrons, but has little effect on 4-14 me V neutrons.
【作者單位】： 北京大學(xué)物理學(xué)院核物理與核技術(shù)國(guó)家重點(diǎn)實(shí)驗(yàn)室;西北核技術(shù)研究所;
【基金】：國(guó)家自然科學(xué)基金(No.11235008;No.10979010)資助~~
【分類(lèi)號(hào)】：TP333
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1 劉建德;;重離子引起的SRAM器件的單粒子效應(yīng)Geant4模擬(英文)[J];IMP & HIRFL Annual Report;2011年00期
，本文編號(hào)：2175014
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