【摘要】：半導(dǎo)體邏輯器件和存儲(chǔ)器件是集成電路中最重要的兩個(gè)部分。近年來(lái),隨著集成電路工藝的發(fā)展,半導(dǎo)體存儲(chǔ)器件的特征尺寸已經(jīng)縮小到30nm以下。在器件尺寸減小和工藝改進(jìn)的同時(shí),也帶來(lái)了新的材料、結(jié)構(gòu)和物理問(wèn)題。為了提高存儲(chǔ)器件的性能,尋找可以替代動(dòng)態(tài)隨機(jī)讀寫(xiě)存儲(chǔ)器和閃存等現(xiàn)有的器件,目前國(guó)際上正在研究多種新型器件,包括鐵電存儲(chǔ)器、磁阻存儲(chǔ)器、相變存儲(chǔ)器以及阻變存儲(chǔ)器(RRAM)。其中,RRAM由于結(jié)構(gòu)簡(jiǎn)單、讀寫(xiě)速度快、功耗低以及與現(xiàn)有CMOS工藝兼容等優(yōu)點(diǎn)受到了極大的關(guān)注。目前,RRAM研究中存在的最大問(wèn)題是它的導(dǎo)電機(jī)理。由于RRAM使用的材料和結(jié)構(gòu)多樣性,實(shí)驗(yàn)中觀察到的器件性能也不盡相同,因此,國(guó)際上提出了多種不同的導(dǎo)電機(jī)理和相關(guān)模型,但是還缺乏一種普適模型,可以很好指導(dǎo)器件的開(kāi)發(fā)和改進(jìn)。另外,近年發(fā)現(xiàn)一些RRAM結(jié)構(gòu)中存在整流特性,這一特性在器件應(yīng)用中具有重要意義,可以簡(jiǎn)化RRAM的電路結(jié)構(gòu)。但是,目前我們對(duì)整流效應(yīng)的機(jī)理和器件結(jié)構(gòu)的關(guān)系還缺乏深入地了解。第三,對(duì)器件的應(yīng)用而言,結(jié)構(gòu)和特性的優(yōu)化,以及器件的可靠性等是非常重要的,還需要大量的進(jìn)一步的研究。針對(duì)目前RRAM中存在的關(guān)鍵問(wèn)題,本論文研究硅基高K介質(zhì)RRAM的制備工藝與特性,包括導(dǎo)電機(jī)理、整流特性、溫度特性、面積特性、噪聲特性和結(jié)構(gòu)優(yōu)化。具體有：(1)制備了具有不同面積、不同高K介質(zhì)材料和金屬電極的RRAM樣品。 (2)對(duì)樣品進(jìn)行了電學(xué)測(cè)量和分析,包括不同溫度下的阻態(tài)轉(zhuǎn)換和整流等Ⅳ特性,隨機(jī)電報(bào)噪聲和1/f噪聲特性。(3)提出了一種新的RRAM導(dǎo)電機(jī)理和相關(guān)等效電阻模型,通過(guò)模型與實(shí)驗(yàn)結(jié)果的比較,提出了一個(gè)對(duì)應(yīng)的RRAM工作能帶圖。本論文的創(chuàng)新結(jié)果有：(1)我們發(fā)現(xiàn)RRAM的總電阻是由半導(dǎo)體/介質(zhì)界面、介質(zhì)層和介質(zhì)/金屬界面三個(gè)電阻串聯(lián)構(gòu)成,在不同的工作條件和阻態(tài)下,各個(gè)電阻對(duì)Ⅳ特性具有不同的影響。(2)在RRAM的導(dǎo)電機(jī)理分析中,我們發(fā)現(xiàn)電子的輸運(yùn)需要聲子輔助。利用聲子輔助模型,所有實(shí)驗(yàn)結(jié)果能夠得到很好地解釋。(3)由上述等效電阻模型和聲子輔助模型,能夠很好解釋我們?cè)诠杌遦介質(zhì)RRAM中觀察到的整流特性。(4)我們分別對(duì)1/f噪聲和隨機(jī)電報(bào)噪聲特性進(jìn)行了測(cè)量,并對(duì)實(shí)驗(yàn)結(jié)果進(jìn)行了詳細(xì)討論。上述結(jié)果,對(duì)深入了解RRAM的工作機(jī)理,指導(dǎo)器件結(jié)構(gòu)和特性的改進(jìn)和優(yōu)化,’促進(jìn)這一存儲(chǔ)器件的開(kāi)發(fā)和應(yīng)用具有重要的意義。
[Abstract]:Semiconductor logic devices and memory devices are the two most important parts of integrated circuits. In recent years, with the development of integrated circuit technology, the characteristic size of semiconductor memory device has been reduced to below 30nm. At the same time, new material, structure and physical problems are brought along with the reduction of device size and process improvement. In order to improve the performance of memory devices and to find alternatives to existing devices such as dynamic random read / write memory and flash memory, many new types of devices are being studied in the world, including ferroelectric memory and magnetoresistive memory. Phase change memory and resistive memory (RRAM). Due to its simple structure, high speed of reading and writing, low power consumption and compatibility with the existing CMOS process, RRAM has attracted much attention. At present, the biggest problem in the research of RRAM is its conductive mechanism. Due to the diversity of materials and structures used in RRAM, the properties of the devices observed in the experiment are different. Therefore, many different conductive mechanisms and related models have been proposed in the world, but there is still a lack of a universal model. It can be used to guide the development and improvement of devices. In addition, in recent years, some RRAM structures have been found to have rectifier characteristics, which is of great significance in the application of devices, and can simplify the circuit structure of RRAM. However, we do not have a thorough understanding of the mechanism of rectifier effect and the structure of the device. Thirdly, the optimization of structure and characteristics, and the reliability of the device are very important for the application of the device, and need a lot of further research. Aiming at the key problems existing in RRAM, the preparation process and characteristics of silicon based high K dielectric RRAM are studied in this paper, including conductive mechanism, rectifying characteristic, temperature characteristic, area characteristic, noise characteristic and structure optimization. The main results are as follows: (1) RRAM samples with different area, high K dielectric materials and metal electrodes were prepared. (2) the electrical measurement and analysis of the samples are carried out, including the characteristics of resistance state conversion and rectifier at different temperatures, random Telegraph noise and 1 / f noise. (3) A new RRAM conductive mechanism and a related equivalent resistance model are proposed. By comparing the model with the experimental results, a corresponding RRAM working band diagram is proposed. The innovative results of this thesis are as follows: (1) We find that the total resistance of RRAM is composed of semiconductor / dielectric interface, dielectric layer and dielectric / metal interface in series. (2) in the analysis of the conduction mechanism of RRAM, we find that the transport of electrons needs phonon assistance. Using the phonon-assisted model, all the experimental results can be explained well. (3) based on the above equivalent resistance model and the phonon-assisted model, It can explain the rectifying characteristics observed in silicon based high k dielectric RRAM. (4) We have measured the characteristics of 1 / f noise and random Telegraph noise respectively and discussed the experimental results in detail. The above results are of great significance in understanding the working mechanism of RRAM, guiding the improvement and optimization of the structure and characteristics of RRAM, and promoting the development and application of this memory device.
【學(xué)位授予單位】：復(fù)旦大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2013
【分類號(hào)】：TP333

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本文編號(hào)：2137325