發(fā)布時(shí)間：2018-06-15 19:32

  本文選題：閃存(Flash + Memory)�。� 參考：《電子技術(shù)應(yīng)用》2017年04期

【摘要】：固態(tài)硬盤(Solid-State Drive,SSD)采用NAND型閃存(Flash Memory)為主要存儲(chǔ)介質(zhì),閃存的讀寫不同于其他介質(zhì),需要閃存轉(zhuǎn)換層(Flash Translation Layer,FTL)對(duì)閃存的存儲(chǔ)空間進(jìn)行管理。傳統(tǒng)方式的映射算法隨著頁(yè)面(Pagesize)的逐漸擴(kuò)大,在隨機(jī)數(shù)據(jù)塊寫入的速度方面難以提升。針對(duì)這個(gè)問(wèn)題,提出一種基于4KB數(shù)據(jù)塊映射的閃存轉(zhuǎn)換層算法,固態(tài)硬盤控制器芯片采用110nm工藝實(shí)現(xiàn),集成了SATA-Ⅱ接口(3Gb/s數(shù)據(jù)傳輸速率),最大可以并行驅(qū)動(dòng)5通道的閃存芯片。該算法結(jié)合芯片的內(nèi)部資源,經(jīng)過(guò)了可靠性檢測(cè),達(dá)到了預(yù)期的可靠性和讀寫速度。
[Abstract]:Solid-State Drive (SSD) uses NAND flash memory as the main storage medium. Flash memory is different from other media in reading and writing. Flash Translation layer (FTL) is required to manage the storage space of flash memory. With the expansion of page size, the traditional mapping algorithm is difficult to improve the speed of random data block writing. In order to solve this problem, a flash memory conversion layer algorithm based on 4KB data block mapping is proposed. The solid-state hard disk controller chip is implemented by 110nm technology, and the SATA- 鈪，

本文編號(hào)：2023297