本文選題：相變存儲器 + 損耗均衡算法　； 參考：《華中科技大學》2012年碩士論文

【摘要】：隨著半導體制造工藝技術的發(fā)展，DRAM與閃存的尺寸已經縮小甚多，但進一步縮小的空間不大，且其存儲性能隨著密度的提升而受到嚴重影響。在此背景下，研究開發(fā)理想的半導體存儲器來解決現(xiàn)有存儲器技術所面臨的瓶頸刻不容緩。為此，新一代具有高密度、高速度、長壽命的存儲器——相變存儲器應運而生。 相變存儲器兼具RAM與閃存的優(yōu)點，其耐寫次數雖能達到108，但在理想條件下，一個基本的相變存儲系統(tǒng)也僅有幾年的壽命。若對同一相變存儲單元進行不間斷地寫操作，則其在數秒內可能失效。鑒此，，提出了一種針對相變存儲器的管理策略來提高整個存儲系統(tǒng)的壽命。 在分析現(xiàn)有閃存和相變存儲器管理策略的基礎上，提出一種易于硬件實現(xiàn)、低內存消耗的動態(tài)交換均衡策略。接著給出混合相變存儲系統(tǒng)的硬件架構，分析文件系統(tǒng)到外存系統(tǒng)之間的數據流結構，將系統(tǒng)的元數據與用戶數據分離，分別存儲到PCM與NAND Flash中。其中，主要對存放元數據的相變存儲器的管理策略進行設計和實現(xiàn)，其基本思想是將存儲系統(tǒng)劃分為多個區(qū)域多個陣列，并將文件數據以條帶化方式進行存儲；通過鄰行拷貝算法來交換陣列內相鄰的存儲行和“冷熱區(qū)”的數據，以均衡整個系統(tǒng)的寫次數。 這種算法與現(xiàn)有的方法相比，能加大數據地址映射的離散度，有效抵御重復寫相同單元的操作，從而延長存儲系統(tǒng)的壽命和利用率。最后，通過仿真結果分析和比較，驗證了所實現(xiàn)算法的性能優(yōu)勢。
[Abstract]:With the development of semiconductor manufacturing technology, the size of DRAM and flash memory has been reduced a lot, but the space for further reduction is small, and its storage performance is seriously affected with the increase of density. Under this background, it is urgent to develop the ideal semiconductor memory to solve the bottleneck of the existing memory technology. Therefore, a new generation of high density, high speed, long life memory-phase change memory came into being. Phase change memory (PCM) has the advantages of both RAM and flash memory. Although its write resistance can reach 108, under ideal conditions, a basic phase-change memory system has only a few years of life. If the same phase change memory cell is continuously written, it may fail in a few seconds. Therefore, a phase change memory management strategy is proposed to improve the lifetime of the whole storage system. Based on the analysis of the existing flash memory and phase change memory management strategies, a dynamic switching equalization strategy, which is easy to implement in hardware and low memory consumption, is proposed. Then the hardware architecture of the hybrid phase change storage system is presented. The data flow structure between the file system and the external storage system is analyzed. The metadata of the system is separated from the user data and stored in PCM and NAND Flash respectively. The management strategy of phase change memory which stores metadata is mainly designed and implemented. The basic idea is to divide the storage system into multiple regions and arrays, and store the file data in a striped way. The adjacent line copy algorithm is used to exchange the data of the adjacent storage lines and the "hot and cold zone" in the array to equalize the write times of the whole system. Compared with the existing methods, this algorithm can increase the dispersion of the data address mapping, resist the operation of the same unit repeatedly, and prolong the life and utilization of the storage system. Finally, through the analysis and comparison of the simulation results, the performance advantages of the proposed algorithm are verified.
【學位授予單位】：華中科技大學
【學位級別】：碩士
【學位授予年份】：2012
【分類號】：TP333

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