本文選題：三維集成電路 + 三維系統(tǒng)級(jí)封裝　； 參考：《國(guó)防科學(xué)技術(shù)大學(xué)》2013年碩士論文

【摘要】：經(jīng)過(guò)40多年的發(fā)展,集成電路工藝發(fā)展到深亞微米和超深亞微米階段,給高性能微處理器的發(fā)展帶來(lái)了很多困難和挑戰(zhàn)。二維集成技術(shù)的功耗問(wèn)題、訪存問(wèn)題、片上互連問(wèn)題,制約著高性能微處理器性能的進(jìn)一步提高。三維SiP是一種新的集成電路封裝技術(shù)。通過(guò)在垂直方向堆疊多層芯片,三維SiP可提高芯片的集成度,并有效地減少互連線長(zhǎng)度,為設(shè)計(jì)高性能、高集成度的集成電路、多核/眾核微處理器提供了有利條件,是未來(lái)集成電路重要的發(fā)展趨勢(shì)。三維集成電路中,多層芯片的垂直堆疊在使芯片的功率密度急劇增加的同時(shí),還減少了芯片的散熱表面積。由于中間芯片無(wú)法連接散熱器,高性能微處理器原本嚴(yán)重的溫度問(wèn)題在三維SiP中加劇,其性能和可靠性受到嚴(yán)重影響。因此在基于三維SiP的高性能微處理器中,溫度管理至關(guān)重要�；谌SSiP的高性能微處理器的設(shè)計(jì)和溫度管理很大程度取決于在芯片早期設(shè)計(jì)階段的熱分析的效果和溫度的分布、變化規(guī)律模擬的準(zhǔn)確性。因此研究和建立精確、高效的熱模型是十分必要的。傳統(tǒng)的空冷散熱器已無(wú)法滿足基于三維SiP的高性能微處理器的溫度過(guò)高引入的散熱需求。微通道液體冷卻技術(shù)通過(guò)在芯片間建立微通道,采用更高效液體冷卻散熱,可快速排出芯片中的熱量,降低芯片溫度,是三維SiP的一種有效的散熱技術(shù)。3D-ICE是一種流行的微通道液體冷卻的三維集成電路的瞬態(tài)溫度模擬器,本文在利用3D-ICE對(duì)基于SiP的性能微處理器的模擬過(guò)程中發(fā)現(xiàn),不同層間的溫度差異較大。而TSV作為三維SiP中重要的組成結(jié)構(gòu),由于采用高熱導(dǎo)率的金屬,能促進(jìn)三維集成電路層與層間的熱傳導(dǎo)。因此在進(jìn)行溫度模擬的過(guò)程中考慮TSV對(duì)熱傳導(dǎo)的影響是很有必要的�；诖�,本文首先分析TSV的結(jié)構(gòu),根據(jù)其結(jié)構(gòu)特點(diǎn),對(duì)方形和圓形TSV在不同位置、結(jié)構(gòu)的情況下進(jìn)行熱建模。然后修改3D-ICE模擬器,使其能對(duì)TSV結(jié)構(gòu)進(jìn)行模擬,并對(duì)模擬器的正確性進(jìn)行分析驗(yàn)證,并分析TSV在不同布局、數(shù)量、大小時(shí)對(duì)三維集成電路的影響。最后利用修改后的模擬器分析了三維SiP的散熱特點(diǎn),并據(jù)此從靜態(tài)、動(dòng)態(tài)兩個(gè)方面提出適用于微通道液體冷卻的三維集成電路的溫度調(diào)節(jié)方案。
[Abstract]:After more than 40 years' development, integrated circuit technology has developed to deep sub-micron and ultra-deep sub-micron stage, which has brought many difficulties and challenges to the development of high-performance microprocessors. The problems of power consumption, memory access and on-chip interconnection in two-dimensional integration technology restrict the further improvement of the performance of high-performance microprocessors. 3D SiP is a new integrated circuit packaging technology. By stacking multilayer chips in the vertical direction, 3D SiP can improve the integration of chips and reduce the length of interconnect effectively. It provides a favorable condition for the design of high performance and high integration integrated circuits and multi-core / multi-core microprocessors. It is an important development trend of IC in the future. In 3D integrated circuits, the vertical stacking of multilayer chips not only increases the power density of the chips, but also reduces the surface area of the chips. Because the intermediate chip can not connect to the radiator, the temperature problem of the high performance microprocessor is aggravated in 3D SiP, and its performance and reliability are seriously affected. Therefore, temperature management is very important in high performance microprocessors based on 3 D SiP. The design and temperature management of high-performance microprocessors based on 3D SiP depend to a great extent on the effect of thermal analysis and temperature distribution in the early stage of chip design, and the accuracy of simulation of variation law. Therefore, it is necessary to study and establish an accurate and efficient thermal model. The traditional air cooling radiator can not meet the requirement of high temperature introduced by high performance microprocessor based on 3D SiP. Microchannel liquid cooling technology, by establishing microchannels between chips and adopting more efficient liquid cooling and cooling heat dissipation, can quickly discharge the heat in the chip and reduce the chip temperature. It is an effective heat dissipation technology of 3D SiP. 3D-ICE is a popular transient temperature simulator for 3D integrated circuit cooled by microchannel liquid. In this paper, it is found in the process of simulating the performance microprocessor based on SiP by using 3D-ICE. There is a great difference in temperature between different layers. As an important structure in 3D SiP, TSV can promote the thermal conduction between the layers of 3D integrated circuits because of the high thermal conductivity of metals. Therefore, it is necessary to consider the effect of TSV on heat conduction in the process of temperature simulation. Based on this, this paper firstly analyzes the structure of TSV, according to its structural characteristics, the thermal modeling of square and circular TSV in different positions and structures is carried out. Then the 3D-ICE simulator is modified to simulate the TSV structure, and the correctness of the simulator is analyzed and verified, and the influence of TSV on the 3D integrated circuit with different layout, quantity and size is analyzed. Finally, the heat dissipation characteristics of 3D SiP are analyzed by using the modified simulator, and the temperature adjustment scheme of 3D integrated circuit suitable for microchannel liquid cooling is put forward from static and dynamic aspects.
【學(xué)位授予單位】：國(guó)防科學(xué)技術(shù)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2013
【分類號(hào)】：TP332
，

本文編號(hào)：1957144