本文選題：抗輻照靜態(tài)隨機(jī)存儲(chǔ)器 + 偏置溫度不穩(wěn)定性　； 參考：《合肥工業(yè)大學(xué)》2017年碩士論文

【摘要】：抗輻照加固的SRAM由于其特殊的應(yīng)用場(chǎng)景,需要高可靠性和長(zhǎng)壽命的支持;而在納米工藝水平下,偏置溫度不穩(wěn)定性(Bias Temperature Instability,BTI)效應(yīng)引起的電路老化成為威脅存儲(chǔ)器電路壽命和可靠性的主要元素。BTI效應(yīng)會(huì)使受壓晶體管閾值電壓發(fā)生漂移,導(dǎo)致SRAM單元變得不對(duì)稱,進(jìn)而導(dǎo)致噪聲容限發(fā)生退化,甚至讀寫(xiě)功能失效。通常SRAM的抗老化方法主要集中在系統(tǒng)級(jí)以及存儲(chǔ)策略上的調(diào)整,使SRAM單元受壓平衡,延緩老化;或者采用冗余存儲(chǔ)單元的設(shè)計(jì),為SRAM的壽命提供余量。這些策略從本質(zhì)上只能延緩老化的發(fā)生。而抗輻射加固SRAM單元由于其冗余存儲(chǔ)節(jié)點(diǎn)的特性,為結(jié)構(gòu)級(jí)SRAM抗老化提供了新的思路。因此,本文針對(duì)抗輻照SRAM單元的老化特性和結(jié)構(gòu)級(jí)抗老化進(jìn)行研究。本文針對(duì)抗輻照靜態(tài)隨機(jī)存儲(chǔ)器DICE (dual interlocked cell, DICE)單元進(jìn)行了研究。為得到BTI老化效應(yīng)對(duì)其性能的具體影響,并針對(duì)其性能退化特性提出抗老化設(shè)計(jì)方案,延長(zhǎng)電路使用時(shí)限,通過(guò)SPICE仿真實(shí)驗(yàn)分析了 DICE單元在受BTI效應(yīng)影響下的老化特性,發(fā)現(xiàn)因老化加重的讀干擾和半選擇干擾是影響DICE結(jié)構(gòu)的SRAM單元穩(wěn)定性和壽命的主要原因。并針對(duì)DICE單元抗輻照的特性,通過(guò)在組成讀寫(xiě)端口的4個(gè)晶體管之間加入額外的控制晶體管,阻斷了 DICE單元存儲(chǔ)節(jié)點(diǎn)相連的路徑,消除了讀干擾和半選擇干擾的影響,避免了單元的讀故障和半選擇故障的出現(xiàn);并通過(guò)仿真實(shí)驗(yàn)驗(yàn)證了改進(jìn)后DICE單元的功能有效性和抗老化有效性。同時(shí)通過(guò)在讀寫(xiě)端口加入控制管,提升了 DICE單元在讀狀態(tài)和半選擇狀態(tài)時(shí)的抗輻照能力。實(shí)驗(yàn)結(jié)果表明,新結(jié)構(gòu)避免了 108s老化后22.6%的讀失效率,大大提升了 DICE單元的可靠性。針對(duì)抗輻照靜態(tài)隨機(jī)存儲(chǔ)器 QUATRO(quad-node ten transistor cell, QUATRO)單元,本文也通過(guò)實(shí)驗(yàn)分析了其老化特性,發(fā)現(xiàn)單元的讀穩(wěn)定性和寫(xiě)穩(wěn)定性均在BTI的影響下均有較大的退化,但是由于QUATRO本身的寫(xiě)噪聲容限余量大大高于讀噪聲容限,因此針對(duì)讀失效的防止仍然是抗老化的首要目標(biāo)。本文利用QUATRO單元節(jié)點(diǎn)冗余的特性,通過(guò)轉(zhuǎn)移讀寫(xiě)端口避免了因老化造成越來(lái)越大的讀干擾對(duì)QUATRO單元的影響;通過(guò)調(diào)整QUATRO單元中各晶體管的相對(duì)驅(qū)動(dòng)能力保證了正確的讀寫(xiě)功能。試驗(yàn)結(jié)果表明。新結(jié)構(gòu)避免了 108s老化后4.1%的讀失效率,提升了其可靠性和壽命。
[Abstract]:SRAM strengthened by irradiation requires high reliability and long life support due to its special application scenarios; and at the nanotechnology level, The bias temperature instability and the circuit aging caused by the Bias Temperature stability Temperature effect become the main element threatening the life and reliability of the memory circuit. The BTI effect will drift the threshold voltage of the transistor and cause the SRAM cell to become asymmetrical. This will lead to the degradation of noise tolerance and even the failure of reading and writing functions. In general, the anti-aging methods of SRAM mainly focus on the adjustment of system level and storage strategy to balance the pressure of SRAM cells and delay the aging, or adopt the design of redundant memory cells to provide allowance for the life of SRAM. In essence, these strategies can only delay the occurrence of aging. Because of the characteristics of the redundant storage node, the radiation resistant SRAM cell provides a new idea for the structural level SRAM to resist aging. Therefore, the aging characteristics and structural grade aging resistance of irradiated SRAM units are studied in this paper. In this paper, we study the DICE dual interlocked cell, DICE) cell of the radiation resistant static random access memory (RRAM). In order to obtain the specific effect of BTI aging effect on its performance, and to put forward an anti-aging design scheme for its property degradation characteristics and prolong the circuit time, the aging characteristics of DICE cell under the influence of BTI effect are analyzed by SPICE simulation experiment. It is found that the reading interference and semi-selective interference due to aging are the main factors affecting the stability and lifetime of SRAM elements in DICE structure. In view of the anti-irradiation characteristics of DICE cells, by adding extra control transistors between the four transistors that make up the read and write ports, the path connected to the storage nodes of the DICE cells is blocked, and the effects of read interference and semi-selective interference are eliminated. The failure of reading and semi-selection is avoided, and the function and anti-aging effectiveness of the improved DICE unit are verified by simulation experiments. At the same time, the control tube is added to the read / write port to improve the radiation resistance of the DICE cell in the read and half selected states. The experimental results show that the new structure avoids the reading failure rate of 22.6% after 108s aging and greatly improves the reliability of DICE units. In this paper, the aging characteristics of QUATRO(quad-node ten transistor cell, QUATRO) cells are also analyzed by experiments. It is found that both the read stability and write stability of the cells are degraded greatly under the influence of BTI. However, because the tolerance of writing noise of QUATRO is much higher than that of reading noise, the prevention of reading failure is still the primary goal of anti-aging. In this paper, by transferring the read and write ports of QUATRO cell node redundancy, we avoid the influence of increasing read interference caused by aging on QUATRO cells, and ensure the correct reading and writing function by adjusting the relative driving ability of each transistor in QUATRO cell. The experimental results show that. The new structure avoids the reading failure rate of 4.1% after 108 s aging and improves its reliability and life.
【學(xué)位授予單位】：合肥工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TP333

【參考文獻(xiàn)】

相關(guān)會(huì)議論文 前1條

1 衛(wèi)寧;王劍峰;杜婕;周聰莉;郭旗;文林;;抗輻射加固封裝國(guó)產(chǎn)存儲(chǔ)器電子輻照試驗(yàn)研究[A];第十屆全國(guó)抗輻射電子學(xué)與電磁脈沖學(xué)術(shù)年會(huì)論文集[C];2009年

相關(guān)博士學(xué)位論文 前1條

1 劉必慰;集成電路單粒子效應(yīng)建模與加固方法研究[D];國(guó)防科學(xué)技術(shù)大學(xué);2009年

相關(guān)碩士學(xué)位論文 前1條

1 方海濤;高速低功耗嵌入式SRAM的設(shè)計(jì)[D];華中科技大學(xué);2012年

，

本文編號(hào)：1956982