本文選題：阻變存儲(chǔ)器 + 硫氰酸亞銅��； 參考：《南昌大學(xué)》2015年碩士論文

【摘要】：阻變存儲(chǔ)器(RRAM)是一種新型的非揮發(fā)性隨機(jī)存儲(chǔ)器,它在傳統(tǒng)的存儲(chǔ)器基礎(chǔ)上進(jìn)行改進(jìn),不僅提高了器件的存儲(chǔ)密度,大大的降低了其制造成本,并能與集成電路工藝更好的兼容。本文利用材料在納米尺度下具有特殊性能的特點(diǎn),對(duì)p型硫氰酸亞銅、n型氧化鋅、聚甲基丙烯酸甲酯、金屬鐵納米顆粒鑲嵌非晶納米氧化鋁這4種材料的阻變性能展開(kāi)了深入的研究,主要結(jié)論如下:1.利用電化學(xué)沉積的方法在ITO導(dǎo)電玻璃片上制備了空心三角錐狀的硫氰酸亞銅薄膜,實(shí)驗(yàn)結(jié)果表明,得到空心形貌的最佳的沉積條件為:頻率1KHz,低電壓為300 mV、高電壓為900 mV的脈沖電壓,電解液組成為0.01 mol/L的CuSO4+0.05 mol/L的KSCN+0.1 mol/L的ETA,沉積時(shí)間10分鐘。將其構(gòu)筑成電阻開(kāi)關(guān)器件后,通過(guò)施加交流電壓、單方向的電壓和直流脈沖電壓等不同類(lèi)型的外加電場(chǎng)發(fā)現(xiàn),硫氰酸亞銅器件具有信息存儲(chǔ)的功能,并提出了空間電荷極化效應(yīng)機(jī)制來(lái)解釋該現(xiàn)象。2.設(shè)計(jì)了CuSCN/PMMA/ZnO(p-i-n)三明治型阻變存儲(chǔ)器。當(dāng)外加電場(chǎng)作用在由p-CuSCN和n-ZnO構(gòu)成的p-n結(jié)上時(shí),器件僅僅表現(xiàn)出整流效應(yīng),而加入PMMA后,器件表現(xiàn)為穩(wěn)定的雙極性電阻開(kāi)關(guān)效應(yīng)。最終分析得出,由于PMMA的加入,器件的耗盡區(qū)增加,且在外加電場(chǎng)作用下,ZnO和CuSCN中的陷阱會(huì)發(fā)生填充和排空,ZnO和CuSCN之間就發(fā)生量子隧穿效應(yīng)。3.采用以表面活性劑的自組裝體系為模板的均相沉淀法制備了金屬鐵納米顆粒鑲嵌非晶納米氧化鋁材料,構(gòu)筑了Fe/Al2O3的阻變存儲(chǔ)器,并在不同溫度下對(duì)器件進(jìn)行測(cè)試。結(jié)果表明,溫度的改變能影響材料內(nèi)部陷阱電子的運(yùn)動(dòng),溫度越高,器件的導(dǎo)電性越差。343 K時(shí),器件不再導(dǎo)通;297 K時(shí),器件表現(xiàn)為歐姆接觸,能對(duì)信息進(jìn)行存儲(chǔ),研究發(fā)現(xiàn)是由于材料內(nèi)部陷阱電子發(fā)生直接遂穿所致;273 K環(huán)境下冷卻處理后,曲線(xiàn)雙向交叉,表現(xiàn)為穩(wěn)定的電阻開(kāi)關(guān)效應(yīng),從結(jié)果中研究得出陷阱電子在低電壓下發(fā)生直接遂穿,高電壓下發(fā)生空間電荷極化效應(yīng)。
[Abstract]:Resistive memory (RRAM) is a new type of nonvolatile random access memory, which is improved on the basis of traditional memory. It not only increases the storage density of devices, but also greatly reduces its manufacturing cost. And can be more compatible with integrated circuit technology. In this paper, based on the special properties of the materials at nanoscale, the p-type cuprous thiocyanate n-type zinc oxide and polymethyl methacrylate were studied. The resistance properties of the four kinds of amorphous aluminum oxide embedded in metallic iron nanoparticles have been studied. The main conclusions are as follows: 1. Hollow triangular conical cuprous thiocyanate thin films were prepared on ITO conductive glass by electrochemical deposition. The optimum deposition conditions for hollow morphology are as follows: frequency 1 kHz, low voltage 300mV, high voltage 900mV pulse voltage, electrolyte composition 0. 01 mol/L CuSO4 0. 5 mol/L KSCN 0. 1 mol/L, deposition time 10 minutes. By applying different types of applied electric field, such as AC voltage, unidirectional voltage and DC pulse voltage, it is found that cuprous thiocyanate device has the function of information storage. The mechanism of space charge polarization effect is proposed to explain this phenomenon. CuSCN / PMMA / ZnOp-i-n) sandwich type resistive memory is designed. When the applied electric field acts on the p-n junction composed of p-CuSCN and n-ZnO, the device only exhibits rectifying effect, while the device with PMMA exhibits a stable bipolar resistance switch effect. Finally, it is found that the depletion region increases with the addition of PMMA, and the quantum tunneling effect between CuSCN and CuSCN is observed by filling and emptying the traps in CuSCN under the applied electric field. Amorphous nanocrystalline Al _ 2O _ 3 materials were prepared by homogeneous precipitation method using the self-assembly system of surfactant as template. The Fe/Al2O3 resistive memory was constructed and the devices were tested at different temperatures. The results show that the change of temperature can affect the movement of trap electrons in the material. The higher the temperature, the worse the conductivity of the device is .343K. When the device is no longer conducting at 297K, the device exhibits ohmic contact and can store the information. It is found that the curve intersects in both directions after cooling at 273K due to the direct penetration of trap electrons in the material, which shows a stable resistance switch effect. From the results, it is found that the trap electron directly penetrates at low voltage, and the space charge polarization effect occurs at high voltage.
【學(xué)位授予單位】：南昌大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TP333

【參考文獻(xiàn)】

相關(guān)博士學(xué)位論文 前1條

1 呂杭炳;電阻型存儲(chǔ)器器件與工藝研究[D];復(fù)旦大學(xué);2008年

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本文編號(hào)：1920024