本文選題：相變存儲(chǔ)器 + 電感耦合等離子��； 參考：《華中科技大學(xué)》2012年碩士論文

【摘要】：相變存儲(chǔ)器因具有非易失性、擦寫速度快、存儲(chǔ)密度高、可靠性高、抗輻射、與CMOS工藝兼容等特點(diǎn)而被業(yè)界認(rèn)為是最有可能取代Flash的下一代存儲(chǔ)器。在相變存儲(chǔ)器從研究階段到產(chǎn)業(yè)化的發(fā)展過(guò)程中，，其制備工藝是其中的關(guān)鍵技術(shù)之一。穩(wěn)定可靠的制備工藝才能保證器件的優(yōu)良性能，高可控性、一致性和重復(fù)性的制備工藝也是產(chǎn)業(yè)化的必要條件。 本文首先研究相變材料的具有高可控性和一致性的干法刻蝕工藝。采用電感耦合等離子技術(shù)研究出了適于Ge2Sb2Te5和不同周期的超晶格相變薄膜材料的刻蝕工藝，利用金相顯微鏡、臺(tái)階儀和原子力顯微鏡等儀器對(duì)刻蝕結(jié)果的測(cè)試和分析顯示，得到了較高的刻蝕速率、很好的一致性和良好的刻蝕形貌。 本文基于對(duì)相變材料的干法刻蝕工藝研究，將其運(yùn)用到相變存儲(chǔ)器的制備工藝中，制備了T型結(jié)構(gòu)的相變存儲(chǔ)器單元，并與剝離工藝制備的不同相變材料的T型結(jié)構(gòu)單元對(duì)比，比較了兩種工藝的特點(diǎn)，總結(jié)了其中的難點(diǎn)并提出解決方案。最后進(jìn)行了相變存儲(chǔ)器電學(xué)性能研究，測(cè)試結(jié)果表明，采用刻蝕工藝和剝離工藝制備的存儲(chǔ)器單元均實(shí)現(xiàn)可逆相變，其中采用電感耦合等離子刻蝕工藝制備的以超晶格薄膜為相變材料的存儲(chǔ)器單元相變電壓為1.9V，操作電流8μA，最快RESET速度為500ps。相變材料的刻蝕工藝成功應(yīng)用于相變存儲(chǔ)器的制備中，對(duì)器件未來(lái)的小型化和產(chǎn)業(yè)化具有重要意義。
[Abstract]:Phase change memory (PCM) is considered to be the next generation memory which is most likely to replace Flash because of its non-volatile, fast writing speed, high storage density, high reliability, radiation resistance and compatibility with CMOS process. In the development of phase change memory from research stage to industrialization, its preparation process is one of the key technologies. The stable and reliable preparation process can guarantee the good performance of the device, high controllability, consistency and reproducibility are also the necessary conditions for industrialization. In this paper, the dry etching process of phase change materials with high controllability and consistency is studied. The etching process of phase change superlattice films suitable for Ge2Sb2Te5 and different periods was studied by inductively coupled plasma technique. The etching results were measured and analyzed by means of metallographic microscope, step instrument and atomic force microscope. High etching rate, good consistency and good etching morphology were obtained. In this paper, based on the study of dry etching of phase change materials, a phase change memory cell with T structure is prepared by applying it to the fabrication process of phase change memory, and it is compared with the T type structure unit of different phase change materials prepared by stripping process. The characteristics of the two processes are compared, the difficulties are summarized and solutions are put forward. Finally, the electrical properties of phase change memory are studied. The test results show that the memory cells prepared by etching and stripping process can realize reversible phase transition. The phase change voltage of the memory cell prepared by inductively coupled plasma etching is 1.9 V, the operating current is 8 渭 A, and the fastest RESET speed is 500ps. The etching process of phase change materials has been successfully applied to the fabrication of phase change memory, which is of great significance to the miniaturization and industrialization of devices in the future.
【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2012
【分類號(hào)】：TN305.7;TP333

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本文編號(hào)：1888770