本文選題：阻變式隨機(jī)存儲(chǔ)器 + 高阻態(tài)��； 參考：《東北師范大學(xué)》2013年碩士論文

【摘要】：阻變式隨機(jī)存儲(chǔ)器因其具有密度高、速度快和結(jié)構(gòu)簡單等特點(diǎn)而備受人們關(guān)注。然而，這類存儲(chǔ)器經(jīng)常會(huì)出現(xiàn)參數(shù)不穩(wěn)定等弊端，如：高阻態(tài)和低阻態(tài)的阻值不穩(wěn)。出現(xiàn)這種現(xiàn)象可能與其機(jī)制有關(guān)：電阻值轉(zhuǎn)變的原因是電場下導(dǎo)電細(xì)絲會(huì)進(jìn)行形成和斷裂，導(dǎo)電細(xì)絲的形成過程是隨機(jī)的，每次轉(zhuǎn)變過程的導(dǎo)電細(xì)絲形成未見得是同一路徑，這就導(dǎo)致了與導(dǎo)電細(xì)絲形成有關(guān)的參數(shù)不穩(wěn)定，因此，為了提高器件的參數(shù)，我們希望能夠找出一種方法來控制導(dǎo)電細(xì)絲的形成。與此同時(shí)，隨著人們對(duì)生活品質(zhì)追求的提高和電子技術(shù)的發(fā)展，電子器件的柔性化也成為當(dāng)今研究的熱點(diǎn)。但尋找到合適的材料卻變成了構(gòu)造柔性阻變式隨機(jī)存儲(chǔ)器的過程中的關(guān)鍵問題。本文的內(nèi)容主要包括以下幾個(gè)方面： (1)提出了50nm聚苯乙烯微球調(diào)制的納米器件結(jié)構(gòu)，試圖提高器件參數(shù)的穩(wěn)定性。對(duì)比Pt/IGZO/Al/SiO_2/Si的平面電極器件，聚苯乙烯微球調(diào)制結(jié)構(gòu)的器件Pt/IGZO/Al/PS-NS/SiO_2/Si不但降低了器件高阻態(tài)和低阻態(tài)的離散型，還很好的提高了器件reset過程的穩(wěn)定性，“good”比例從26%提高到73%。我們認(rèn)為這與器件的導(dǎo)電細(xì)絲形成和斷裂的機(jī)制有關(guān)，我們制備的這種獨(dú)特的納米結(jié)構(gòu)會(huì)令器件的頂電極和底電極之間形成一種類球形電場，從而控制導(dǎo)電細(xì)絲的形成，以至于達(dá)到穩(wěn)定參數(shù)的目的。 (2)應(yīng)用旋涂技術(shù)在塑料襯底上制備了以ZnO納米線嵌入聚甲基丙烯酸甲酯（PMMA）有機(jī)物的納米復(fù)合材料為轉(zhuǎn)換層的柔性阻變式隨機(jī)存儲(chǔ)器件。此器件展現(xiàn)出良好的單極性電阻轉(zhuǎn)換效應(yīng)（RS），具有較好的電學(xué)性能。在柔性測試中，其展示了優(yōu)異的抗彎折性能以及持久的機(jī)械壽命，器件在經(jīng)受不同彎折角度和多達(dá)105的彎折次數(shù)后，性能沒有明顯的退化，存儲(chǔ)信息保持良好。此器件中的阻變行為可能與附著在ZnO納米線表面的氧空位和（或者）鋅離子有關(guān)，致使導(dǎo)電細(xì)絲（CFs）沿著ZnO納米線方向形成。這種獨(dú)特的轉(zhuǎn)換機(jī)制和良好的抗彎折性能，，表明了該器件具有在柔性存儲(chǔ)器中應(yīng)用的前景。
[Abstract]:Resistive random access memory (RRAM) has attracted much attention because of its high density, high speed and simple structure. However, this kind of memory often has the disadvantages of parameter instability, such as high resistance state and low resistance state resistance instability. This phenomenon may have something to do with its mechanism: the reason for the resistance transition is that the conductive filament will form and break under the electric field, the forming process of the conductive filament is random, and the formation of the conductive filament in each transition process is not seen to be the same path. Therefore, in order to improve the device parameters, we hope to find a way to control the formation of conductive filament. At the same time, with the improvement of quality of life and the development of electronic technology, the flexibility of electronic devices has become a hot topic. However, finding suitable materials has become a key problem in the process of constructing flexible resistive random access memory (RRAM). This article mainly includes the following aspects: 1) the structure of 50nm polystyrene microspheres modulated nanoscale devices is proposed to improve the stability of device parameters. Compared with the planar electrode devices of Pt/IGZO/Al/SiO_2/Si, the polystyrene microsphere modulated device Pt/IGZO/Al/PS-NS/SiO_2/Si not only reduces the discrete state of high resistance state and low resistance state, but also improves the stability of the device reset process. The proportion of "good" increases from 26% to 73%. We think this is related to the mechanism of the formation and fracture of the conductive filament of the device, and the unique nanostructure we have prepared will form a kind of spherical electric field between the top electrode and the bottom electrode of the device, thus controlling the formation of the conductive filament. So as to achieve the purpose of stable parameters. A flexible resistive random memory device with ZnO nanowires embedded in polymethyl methacrylate (PMMA) organic nanocomposites as conversion layer was fabricated on plastic substrate by spin-coating technique. This device exhibits good unipolar resistance conversion effect and good electrical performance. In the flexibility test, it shows excellent bending performance and long mechanical life. After different bending angles and up to 105 bending times, the performance of the device does not degrade obviously, and the storage information is maintained well. The resistance behavior in this device may be related to the oxygen vacancy and / or zinc ions attached to the surface of ZnO nanowires, resulting in the formation of conducting filaments along the ZnO nanowires. The unique conversion mechanism and good flexural properties show that the device has the prospect of application in flexible memory.
【學(xué)位授予單位】：東北師范大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2013
【分類號(hào)】：TP333;TB383.1

【共引文獻(xiàn)】

相關(guān)期刊論文 前6條

1 吳杰;施俊斐;董承遠(yuǎn);鄒忠飛;陳宇霆;周大祥;胡哲;詹潤澤;;Effect of active layer deposition temperature on the performance of sputtered amorphous In Ga Zn O thin film transistors[J];Journal of Semiconductors;2014年01期

2 曹明杰;趙明;莊大明;郭力;歐陽良琦;李曉龍;宋軍;;磁控濺射制備非晶銦鎵鋅氧化物薄膜的電學(xué)性能研究[J];材料研究學(xué)報(bào);2015年01期

3 王丹丹;王卿璞;王漢斌;張錫健;武麗偉;李福杰;袁帥;;Characteristics of sputtered Y-doped IZO thin films and devices[J];Journal of Semiconductors;2015年09期

4 牛建文;馬瑞新;王媛媛;李士娜;程詩W

本文編號(hào)：1830070