本文選題：鐵電阻變存儲器　切入點：阻變效應　出處：《北京工業(yè)大學學報》2017年03期

【摘要】：為了研究利用脈沖激光沉積法制備于SrTiO_3襯底上的Au/BiFeO_3/SrRuO_3結構的阻變效應,實驗通過測量樣品的I-V特性曲線來表征樣品的阻態(tài)變化.由于BiFeO_3與Au、SrRuO_3功函數(shù)的不同在Au/BiFeO_3、BiFeO_3/SrRuO_3兩個接觸界面形成穩(wěn)定的肖特基接觸,通過改變外部電壓控制陷阱能級填充的程度可以改變肖特基勢壘高度,從而在施加電壓小于矯頑電壓時可以形成穩(wěn)定的高低阻變化,表現(xiàn)出最大可達103高低阻電流比的I-V特性曲線.對I-V特性曲線進行不同導電機制的擬合表明:小于矯頑電壓下空間電荷限制電流起到了主導作用,陷阱的填充與脫陷是主要的阻變機制.
[Abstract]:In order to study the resistance effect of Au/BiFeO_3/SrRuO_3 structure prepared on SrTiO_3 substrate by pulsed laser deposition, the I-V characteristic curve of the sample was measured to characterize the resistance state change of the sample.Due to the difference between the work functions of BiFeO_3 and Au-SrRuOs, stable Schottky contacts can be formed at the two contact interfaces of Au/ BiFeO3BiFeO3BiFeO3BiFeO3. Schottky barrier height can be changed by changing the degree of filling of trap energy levels controlled by external voltage.Therefore, when the applied voltage is less than the coercive voltage, a stable high and low resistance variation can be formed, showing the I-V characteristic curve with the maximum high / low resistance current ratio of 103.By fitting the I-V characteristic curves with different conduction mechanisms, it is shown that the space charge limiting current plays a leading role when the voltage is smaller than the coercive voltage, and the trap filling and detrapping are the main resistance mechanisms.
【作者單位】： 北京工業(yè)大學電子信息與控制工程學院;復旦大學微電子學院;中國科學院半導體研究所光電子器件國家工程研究中心;
【基金】：國家自然科學基金資助項目(61201046) 北京市自然科學基金資助項目(4162013;2132023)
【分類號】：TP333;TB383.2
，

本文編號：1718595