本文選題：現(xiàn)場可編程門陣列　切入點(diǎn)：單粒子翻轉(zhuǎn)　出處：《電子學(xué)報(bào)》2017年08期

【摘要】：SRAM型FPGA在輻射環(huán)境中易受到單粒子翻轉(zhuǎn)的影響,造成電路功能失效.本文基于圖論和元胞自動機(jī)模型,提出了一種針對SRAM型FPGA單粒子效應(yīng)的電路故障傳播模型.本文將單粒子翻轉(zhuǎn)分為單位翻轉(zhuǎn)和多位翻轉(zhuǎn)來研究,因?yàn)槎辔环D(zhuǎn)模型還涉及到了沖突處理的問題.本文主要改進(jìn)了耦合度的計(jì)算方式,通過計(jì)算FPGA布局布線中的相關(guān)配置位,從而使得仿真的電路故障傳播模型更接近于實(shí)際電路碼點(diǎn)翻轉(zhuǎn)的結(jié)果,與以往只計(jì)算LUT相關(guān)配置位的方法比較,平均優(yōu)化程度為19.89%.最后闡述了本模型在故障防御方面的一些應(yīng)用,如找出最易導(dǎo)致故障擴(kuò)散的元胞.
[Abstract]:SRAM type FPGA is easily affected by single particle flip in radiation environment, which results in circuit failure. This paper is based on graph theory and cellular automata model. In this paper, a circuit fault propagation model for SRAM type FPGA single particle effect is proposed. Because the multi-bit flip model also involves the problem of conflict management, this paper mainly improves the calculation method of coupling degree, and calculates the relative configuration bits in FPGA layout and routing. Thus, the simulated circuit fault propagation model is closer to the result of the actual circuit code point flipping, and compared with the previous method which only calculates the LUT related configuration bit. The average degree of optimization is 19.89. Finally, some applications of this model in fault defense are described, such as finding out the cell that is the most likely to cause fault diffusion.
【作者單位】： 復(fù)旦大學(xué)專用集成電路與系統(tǒng)國家重點(diǎn)實(shí)驗(yàn)室;
【基金】：國家自然科學(xué)基金(No.61131001)
【分類號】：TP333
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本文編號：1653981