本文選題：離子器件　切入點(diǎn)：憶阻器　出處：《科學(xué)通報(bào)》2014年30期 　論文類型：期刊論文

【摘要】：在電場(chǎng)作用下陽(yáng)離子或陰離子的傳輸導(dǎo)致離子導(dǎo)體電阻態(tài)的變化,是離子導(dǎo)體的一般性阻變機(jī)理.與現(xiàn)有的半導(dǎo)體器件相比,憶阻型離子器件有顯著優(yōu)點(diǎn):離子器件作為存儲(chǔ)器時(shí)其信息存儲(chǔ)密度高、能耗低、擦寫(xiě)時(shí)間只需幾納秒;離子器件還可用于邏輯運(yùn)算,這樣未來(lái)的計(jì)算機(jī)將不受馮·諾依曼瓶頸的限制,信息的存儲(chǔ)與處理將均可由離子器件完成.尤為重要的是,用離子器件構(gòu)建的人工神經(jīng)網(wǎng)絡(luò)能夠?qū)崿F(xiàn)類似大腦的學(xué)習(xí)、記憶和遺忘等功能,美國(guó)國(guó)防高級(jí)研究計(jì)劃署的SyNAPSE項(xiàng)目有望于2016年制造出與貓智力相當(dāng)?shù)娜斯ご竽X,該人工大腦的能耗約為1 kW,體積小于2 L,這將是人工智能領(lǐng)域的一場(chǎng)革命.納米離子器件將在下一個(gè)信息時(shí)代發(fā)揮重要作用.
[Abstract]:Transmission in the electric field of cationic or anionic induced changes in ion conductor resistance state, is the general ion conductor resistance mechanism. Compared with the existing semiconductor devices, memristive devices have significant advantages: ion ion storage device as the information storage density, low energy consumption, erasing time just a few nanoseconds; ion devices can also be used for logic operations, so that future machines will not be affected by von Neumann bottleneck, information storage and processing can be completed by ion devices. Especially, the artificial neural network constructed by ion devices can achieve similar brain functions such as learning, memory and forgetting, the U.S. Defense advanced research projects the Department of the SyNAPSE project is expected to be in 2016 to create an artificial brain with cat intellectual equal, energy consumption of the artificial brain is about 1 kW, the volume is less than 2 L, it will be artificial intelligence collar A revolution in the domain. Nanoscale devices will play an important role in the next information age.

【作者單位】： 華中科技大學(xué)材料科學(xué)與工程學(xué)院;中國(guó)科學(xué)院物理研究所;中國(guó)科學(xué)院上海硅酸鹽研究所 高性能陶瓷和超微結(jié)構(gòu)國(guó)家重點(diǎn)實(shí)驗(yàn)室;
【基金】：國(guó)家自然科學(xué)基金(51372094)資助
【分類號(hào)】：TP333
，

本文編號(hào)：1595567