本文關(guān)鍵詞： PEDOT:PSS 阻變存儲器 限流值 下電極 金屬細(xì)絲　出處：《清華大學(xué)》2012年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著科技進步，人們對數(shù)據(jù)處理與存儲的要求大幅度增加。阻變存儲器很好地兼顧了DRAM和Flash的優(yōu)點，同時具有非易失性和短小輕薄的特點，是一種應(yīng)用前景廣闊的非易失性存儲器�；谟袡C材料的阻變存儲器具有很多優(yōu)勢：成本低廉、工藝簡單、易于大面積成膜以及制備可以彎曲的柔性器件等。PEDOT:PSS是一種穩(wěn)定性好的環(huán)境友好型材料，在有機電子學(xué)的多個領(lǐng)域都有重要的應(yīng)用。本文嘗試?yán)么趴貫R射技術(shù)和旋轉(zhuǎn)涂覆工藝制備四類基于PEDOT:PSS有機薄膜的阻變存儲器，并重點探討了電阻轉(zhuǎn)變機制以及影響存儲性能的因素，取得了如下結(jié)果： 在Al/PEDOT:PSS/Al體系中觀察到高達104的開關(guān)比以及在直流模式下超過103次的循環(huán)抗疲勞特性， Al/PEDOT:PSS/Al體系的電阻轉(zhuǎn)變是由基于PEDOT氧化還原反應(yīng)的導(dǎo)電細(xì)絲引起的。另外，通過改變限流值的大小可以實現(xiàn)對多個電阻轉(zhuǎn)變參數(shù)的有效調(diào)節(jié)，并最終確定了Al/PEDOT:PSS/Al體系中電阻轉(zhuǎn)變的臨界限流值和RESET過程消耗的最小功率值。 通過比較Al/PEDOT:PSS/Al、FTO/PEDOT:PSS/Al和Pt/PEDOT:PSS/Al三類阻變存儲體系，分析了底電極種類對阻變存儲器的存儲性能以及電阻轉(zhuǎn)變種類的影響。 實驗中成功發(fā)展了一類具有更長數(shù)據(jù)保持時間（106s）、更好的熱穩(wěn)定性（在25溫℃~度16區(qū)0℃間內(nèi)都有電阻轉(zhuǎn)變特性）和小于2V的電壓轉(zhuǎn)變閾值的Al/PEDOT:PSS/Cu非易失性阻變存儲器。通過TEM和EDX等手段發(fā)現(xiàn)納米級銅導(dǎo)電細(xì)絲的存在，確定該器件的阻變機制為Cu導(dǎo)電細(xì)絲的氧化還原。綜合利用XRD、XPS、DSC、TGA和SEM等技術(shù)分析得出Al/PEDOT:PSS/Cu阻變存儲體系在180℃溫度下電阻轉(zhuǎn)變失效是由Cu上電極表面被氧化所引起的。
[Abstract]:With the development of science and technology, the demand for data processing and storage has been greatly increased. Resistive memory has the advantages of both DRAM and Flash, and has the characteristics of non-volatile and short and thin. Resistive memory based on organic materials has many advantages: low cost, simple process, Easy to form large area films and to fabricate flexible devices that can be bent. PEDOT: PSS is a kind of stable and environment-friendly material. This paper attempts to fabricate four kinds of resistive memory based on PEDOT:PSS organic film by using magnetron sputtering and rotating coating technology, which have important applications in many fields of organic electronics. The mechanism of resistance transition and the factors affecting storage performance are discussed. The results are as follows:. A switch ratio of up to 104 and cyclic fatigue resistance of more than 103times in DC mode have been observed in Al/PEDOT:PSS/Al system. The resistance transition of Al/PEDOT:PSS/Al system is caused by conducting filament based on PEDOT redox reaction. By changing the current limiting value, the effective adjustment of multiple resistance transition parameters can be realized, and the critical current limiting value of resistance transition in Al/PEDOT:PSS/Al system and the minimum power consumption of RESET process can be determined. By comparing three kinds of resistive storage systems, Al / PEDOT: PSS / PSS / Al and Pt/PEDOT:PSS/Al, the effects of the type of bottom electrode on the storage performance and the type of resistance transition of the resistive memory are analyzed. A class of Al/PEDOT:PSS/Cu with longer data retention time (106sg), better thermal stability (resistive transition characteristics in the temperature range of 25 鈩，

本文編號：1555416