本文關鍵詞： NROM存儲器 SONOS存儲器 總劑量輻射 退火特性 電荷泵 靈敏放大器　出處：《核技術》2015年01期 　論文類型：期刊論文

【摘要】：對一款商用NROM(Nitride-Read-Only-Memory)存儲器進行了鈷源輻射和退火試驗,研究了NROM的總劑量效應和退火特性。使用了超大規(guī)模集成電路測試系統(tǒng)測試了NROM的DC、AC、功能參數(shù),分析了輻射敏感參數(shù)在輻射和退火過程中的變化規(guī)律,研究了器件功能失效和參數(shù)退化的原因。測試結果表明:界面態(tài)陷阱電荷引起了電路模塊中的電荷泵和靈敏放大器MOS管閾值漂移,進而性能惡化、器件功能失效。退火期間由于界面態(tài)陷阱電荷沒有發(fā)生大量退火,致使電路模塊性能沒有完全恢復,電流參數(shù)沒有明顯下降。
[Abstract]:Cobalt source radiation and annealing experiments were performed on a commercial NROMN Nitride-Read-Only-memorymemory. The total dose effect and annealing characteristics of NROM were studied. The NROM NROM functional parameters were tested by using a very large scale integrated circuit (VLSI) test system. The variation of radiation-sensitive parameters in the process of radiation and annealing is analyzed. The experimental results show that the interface state trap charge causes the threshold drift of the charge pump and the sensitive amplifier MOS tube in the circuit module, which leads to the deterioration of the performance. During annealing, the interface state trap charge does not occur a large amount of annealing, resulting in the circuit module performance is not fully restored, and the current parameters do not decrease significantly.
【作者單位】： 新疆理化技術研究所中國科學院特殊環(huán)境功能材料與器件重點實驗室;新疆電子信息材料與器件重點實驗室;
【分類號】：TP333
【正文快照】： 非易失型存儲器具有在線可編程、存儲信息掉電不丟失、讀寫速度高、抗震動性好等優(yōu)勢,使其在航天器中具有廣泛應用。主流的浮柵型非易失存儲器在宇宙空間中沒有很強的抗輻射能力[1],會影響航天器的可靠性和在軌壽命[2]。SONOS(Silicon-Oxide-Nitride-Oxide-Silicon)存儲器以其，

本文編號：1441826