本文關(guān)鍵詞：一種用于ASIC內(nèi)部存儲(chǔ)器單粒子翻轉(zhuǎn)效應(yīng)評(píng)估的方法　出處：《微電子學(xué)與計(jì)算機(jī)》2017年10期 　論文類型：期刊論文

  更多相關(guān)文章： ASIC SRAM SEU MBIST

【摘要】：本文提出了利用存儲(chǔ)器內(nèi)建自測(cè)試(MBIST)進(jìn)行專用集成電路(ASIC)內(nèi)部存儲(chǔ)器的單粒子翻轉(zhuǎn)(SEU)檢測(cè)方法,研究并制定了MBIST的單粒子有效性輻照注量的統(tǒng)計(jì)方案,最后在重離子加速器上應(yīng)用該方法進(jìn)行了單粒子試驗(yàn)驗(yàn)證.通過(guò)與相同結(jié)構(gòu)的存儲(chǔ)器SEU結(jié)果的對(duì)比分析,結(jié)果表明,MBIST在有效輻照注量(1.27E+7icons/cm2)下,與存儲(chǔ)器在標(biāo)準(zhǔn)輻照注量(1E+7icons/cm2)下獲得的SEU在軌錯(cuò)誤率誤差小于2倍,運(yùn)用MBIST方法可以方便、準(zhǔn)確地用于評(píng)估ASIC的存儲(chǔ)器SEU性能指標(biāo).
[Abstract]:In this paper, a single particle flip set (SEU) detection method for ASIC internal memory based on memory built in self-test (MBIST) is proposed. The statistical scheme of single particle effective radiation flux of MBIST is studied and developed. Finally, the method is applied to the heavy ion accelerator to verify the single-particle test. The results are compared with the SEU results of the same structure memory. MBIST under the effective irradiation flux of 1.27E 7icons / cm ~ 2). The error of in-orbit error of SEU with memory is less than 2 times under the standard irradiation flux of 1E 7icons / cm ~ 2. It is convenient to use MBIST method. Accurately used to evaluate the memory SEU performance of ASIC.
【作者單位】： 北京微電子技術(shù)研究所;
【分類號(hào)】：TN492;TP333
【正文快照】： 1引言空間中運(yùn)行的集成電路容易受到單粒子效應(yīng)的影響,集成電路內(nèi)部的存儲(chǔ)單元是單粒子效應(yīng)敏感單元,容易受單粒子效應(yīng)影響而產(chǎn)生單粒子翻轉(zhuǎn)(SEU)[1-2].衛(wèi)星上使用的可編程邏輯門陣列(FP-GA)由于內(nèi)部存儲(chǔ)單元多,單粒子翻轉(zhuǎn)效應(yīng)明顯,嚴(yán)重時(shí)導(dǎo)致電路功能中斷失效,威脅空間飛行器，

本文編號(hào)：1401331