本文關(guān)鍵詞：環(huán)形柵器件建模研究　出處：《哈爾濱工業(yè)大學(xué)》2012年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 總劑量效應(yīng) SPICE模型 環(huán)形柵 標(biāo)準(zhǔn)單元 靜態(tài)隨機(jī)存取存儲器

【摘要】：先進(jìn)集成電路工藝的迅猛發(fā)展使得先進(jìn)集成電路的抗總劑量效應(yīng)能力也得到一定程度的提升。但是由于工藝、晶圓以及生產(chǎn)線等多方面因素的影響，商用CMOS工藝生產(chǎn)的器件的抗總劑量效應(yīng)能力差異較大。因此為保證器件在空間輻射環(huán)境中的長時(shí)間正常工作，仍需采用抗總劑量效應(yīng)加固技術(shù)。 本文介紹了總劑量效應(yīng)的產(chǎn)生機(jī)理以及目前較為成熟的總劑量效應(yīng)加固方法，并采用目前較為常用的環(huán)形柵結(jié)構(gòu)設(shè)計(jì)了容量為8kb的靜態(tài)隨機(jī)存取存儲器（SRAM）。 鑒于目前商用器件的SPICE模型不適合環(huán)形柵器件這一問題，本文首先提出了適用于多數(shù)環(huán)形柵結(jié)構(gòu)的環(huán)形柵器件等效寬度提取方法，并對商用SPICE模型中的相關(guān)參數(shù)提出了相應(yīng)的調(diào)整方法，使目前的商用SPICE模型能夠應(yīng)用于環(huán)形柵器件的SPICE仿真。與現(xiàn)存的等效寬長比提取方法的比較結(jié)果以及TCAD仿真結(jié)果均表明該模型較為準(zhǔn)確。 為保證本文設(shè)計(jì)的SRAM的行列譯碼電路即能采用環(huán)形柵結(jié)構(gòu)又能夠通過top-down流程實(shí)現(xiàn)，，本文研究了SMIC公司0.18μm工藝標(biāo)準(zhǔn)單元建立方法，并設(shè)計(jì)了三種環(huán)形柵標(biāo)準(zhǔn)單元。驗(yàn)證結(jié)果表明，本文設(shè)計(jì)的標(biāo)準(zhǔn)單元能夠被數(shù)字電路設(shè)計(jì)工具正確識別并使用。 最后采用環(huán)形柵結(jié)構(gòu)標(biāo)準(zhǔn)單元結(jié)合SMIC0.18μm標(biāo)準(zhǔn)單元庫中其他單元本文完成了環(huán)形柵結(jié)構(gòu)SRAM的電路版圖設(shè)計(jì)及驗(yàn)證，結(jié)果表明本文設(shè)計(jì)的SRAM子單元能夠在10ns的時(shí)鐘周期下正常工作。
[Abstract]:With the rapid development of advanced integrated circuit technology , the anti - total dose - effect ability of advanced integrated circuit is promoted to a certain extent . However , due to the influence of many factors such as process , wafer and production line , the total dose - effect of devices produced by commercial CMOS technology is different . Therefore , it is necessary to adopt anti - total dose - effect reinforcement technology to ensure the normal operation of the device in space radiation environment . This paper introduces the generation mechanism of total dose effect and the current mature total dose effect reinforcement method , and designs static random access memory ( SRAM ) with capacity of 8 kb using the commonly used ring gate . In view of the problem of unsuitable ring gate devices , the equivalent width extraction method of ring grid devices suitable for most annular gate structures is proposed . The corresponding adjustment methods are proposed for the relevant parameters in the commercial spice model . The current commercial spice model can be applied to the spice simulation of the ring grid device . Compared with the existing equivalent width - length ratio extraction method and the results of the TCAD simulation , the model is more accurate . In order to ensure that the row - column decoding circuit of SRAM designed in this paper can be realized by top - down flow , the design method of 0.18 渭m process standard unit in SMIC is studied , and three kinds of ring gate standard units are designed . The verification results show that the standard cell designed in this paper can be correctly identified and used by the digital circuit design tool . Finally , the design and verification of the circuit layout of the SRAM of the annular gate structure are completed by using the standard cell of the annular gate structure and the other elements in the SMIC 0.18 渭m standard cell bank . The results show that the SRAM subcell designed in this paper can work normally at 10ns clock cycle .

【學(xué)位授予單位】：哈爾濱工業(yè)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2012
【分類號】：TP333;TN432

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 阮宜武;漢明碼檢驗(yàn)系統(tǒng)的電路實(shí)現(xiàn)[J];網(wǎng)絡(luò)安全技術(shù)與應(yīng)用;2005年08期

本文編號：1387853