【摘要】：通過電導率測量、金相觀察、掃描電鏡分析、透射電鏡分析、X射線衍射分析和電子探針微量分析,研究了B的添加對鑄造Al-Si合金晶格常數(shù)、晶粒尺寸和導電性能的影響。研究結果表明:當B的質量分數(shù)低于0.02%時,Al基體內(nèi)各雜質元素Ti、Cr、Mn、V均以硼化物的形式從Al基體內(nèi)析出,Al基體內(nèi)的晶格畸變程度明顯降低,電導率提高了6.45%;當B的質量分數(shù)超過0.02%時,B與Ti作用形成TiB_2,TiB_2促進Al3Ti相的形成,TiB_2和Al_3Ti共同促進晶粒細化,晶界增多,電子散射幾率增加,同時過量的B固溶在Al基體內(nèi),電導率下降了2.55%;當B的質量分數(shù)為0.02%時,在保證合金的抗拉強度不降低的同時,合金的電導率達到最好,為33.00%IACS。
[Abstract]:The effects of B addition on lattice constant, grain size and conductivity of cast Al-Si alloy were studied by means of conductivity measurement, metallographic observation, scanning electron microscope analysis, transmission electron microscope analysis, X-ray diffraction analysis and electron probe microanalysis. The results show that when the mass fraction of B is lower than 0.02, the lattice distortion of Al matrix precipitates from Al matrix in the form of boride. When the mass fraction of B is more than 0.02, TiB2TiB2 is formed to promote the formation of Al3Ti phase. TiB2 and Al_3Ti promote grain refinement, grain boundary increase, electron scattering probability increase, and excess B solution in Al matrix. When the mass fraction of B is 0.02, the electrical conductivity of the alloy reaches the best when the tensile strength of the alloy is not reduced, and the conductivity of the alloy is 33.00.
【作者單位】： 中國兵器科學研究院寧波分院;中南大學;
【基金】：基金項目:寧波市創(chuàng)新團隊(2014B82001)
【分類號】：TG146.21

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1 劉順華,郭可嫳;鈉對共晶型Al-Si合金共晶團的影響[J];大連工學院學報;1984年04期

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