本文選題：全化學(xué)溶液法 + YBCO涂層導(dǎo)體�。� 參考：《西安理工大學(xué)》2017年碩士論文

【摘要】：第二代高溫超導(dǎo)帶材又稱YBa2Cu307-δ (YBCO)涂層導(dǎo)體,因其具有優(yōu)異且獨(dú)特的物理性能,而廣泛應(yīng)用于電力領(lǐng)域。如今,具有高成本的物理方法是用于制備高質(zhì)量過渡層和YBCO涂層導(dǎo)體的成熟技術(shù)。但是,化學(xué)溶液沉積(CSD)法具有低成本的特點(diǎn),它是YBCO涂層導(dǎo)體可大規(guī)模產(chǎn)業(yè)化的關(guān)鍵。此外,CSD法也是用于制造高質(zhì)量過渡層,甚至YBCO薄膜的另一個(gè)重要途徑。本研究選用Ni-5%W合金作為基底,并使用全化學(xué)溶液法制備YBCO涂層導(dǎo)體,其中過渡層材料選用與基底和YBCO晶格匹配較高的單一薄膜SrTiO3 (STO)和復(fù)合薄膜CeO2/La2Zr2O7(LZO),并分別在這兩種過渡層上外延生長(zhǎng)YBCO薄膜。本文對(duì)過渡層的前驅(qū)體溶液配制、處理工藝以及YBCO薄膜的制備進(jìn)行了研究,并得出以下結(jié)論:(1)采用CSD法在Ni-5%W基底上制備了單一過渡層SrTiO3 (STO)薄膜和La3+摻雜的STO (LSTO)薄膜,確定了單一(100)擇優(yōu)取向的LSTO薄膜的制備工藝;(2)基于原有工藝制備了不同鑭鋯元素比例的LZO前驅(qū)溶液,在10%H2-N2混合氣氛、1050 ℃保溫1 h的熱處理工藝下得到了比例為L(zhǎng)a3+/Zr4+ = 1、La3+/Zr4+ = 1.1、La3+/Zr4+= 1.2三種薄膜,相較原有薄膜其取向性、面內(nèi)外織構(gòu)、表面粗糙度和致密度都得到了提高;(3)采用硝酸鈰為原料制備了穩(wěn)定的氧化鈰前驅(qū)溶液,于低溫300 ℃下熱分解30 min且高溫1050℃保溫25 min的熱處理工藝獲得了 CeO2薄膜且質(zhì)量良好;(4)基于優(yōu)化后的LZO薄膜和CeO2薄膜的制備工藝,成功制備出了質(zhì)量?jī)?yōu)良(單一的取向、良好的面內(nèi)外織構(gòu)、平整光滑的表面)的復(fù)合過渡層CeO2/LZO;(5)采用全化學(xué)溶液法在CeO2/LZO復(fù)合過渡層上外延生長(zhǎng)了 Y3+ : Ba2+ : Cu2+= 1 :2:3的YBCO薄膜。通過對(duì)YBCO薄膜熱處理氧分壓參數(shù)的研究,成功制備了表面、取向良好的單層YBCO薄膜,最終取得了Jc ≥ 1.00 MA/cm2 (77 K,0T)的突破。
[Abstract]:The second generation high temperature superconducting tape, also known as YBA _ 2Cu _ 307- 未 (YBCO) coated conductor, is widely used in power industry because of its excellent and unique physical properties. Nowadays, high-cost physical methods are used to prepare high-quality transition layers and YBCO coated conductors. However, the chemical solution deposition (CSD) method has the characteristics of low cost, which is the key to the large-scale industrialization of YBCO coated conductors. In addition, CSD method is another important way to fabricate high quality transition layer, even YBCO thin film. In this study, Ni-5W alloy was used as substrate and YBCO coated conductor was prepared by all-chemical solution method. The transition layer materials are SrTiO _ 3 (STO) and CEO _ 2 / La _ 2Zr _ 2O _ 7 (LZO), which match well with the substrate and YBCO lattice. YBCO thin films are grown on these two transition layers respectively. In this paper, the preparation of precursor solution for transition layer, the treatment process and the preparation of YBCO thin films are studied. The following conclusions are obtained: (1) single transition layer SrTiO3 (STO) thin films and La3-doped STO (LSTO) thin films have been prepared on Ni-5W substrate by CSD method. The preparation process of LSTO thin films with single (100) preferred orientation was determined. (2) LZO precursor solution with different lanthanum and zirconium ratios was prepared based on the original process. Three kinds of films, La _ 3 / Zr _ 4 = 1 ~ (-1) La _ (3 / Zr _ 4) = 1.1% La _ (3 / Zr _ 4) = 1.2, were obtained by heat treatment at 1050 鈩，

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