本文選題：電火花線切割 + 單晶硅��； 參考：《南京航空航天大學(xué)》2016年碩士論文

【摘要】：隨著現(xiàn)代科技的飛速發(fā)展,具有特定晶向的單晶硅衍射晶體在高科技領(lǐng)域已經(jīng)得到了越來(lái)越廣泛的應(yīng)用,如中子散射譜儀、硬X射線標(biāo)定裝置等。在大尺寸定晶向單晶硅電火花線切割加工時(shí),加工后的衍射晶體表面并不是理想平面,每點(diǎn)的晶向誤差與理想平面上每個(gè)點(diǎn)的晶向誤差都是不同的,需要對(duì)整塊晶體的晶向精度進(jìn)行測(cè)量,同時(shí)由于晶體尺寸較大而載物臺(tái)尺寸較小,所以每次測(cè)量得到的只是晶體表面部分的晶向精度,測(cè)量難度大、耗時(shí)長(zhǎng)、測(cè)量精度低;此外,電火花線切割單晶硅時(shí)會(huì)在表面形成損傷層,如何方便地測(cè)定出該損傷層厚度為后續(xù)拋磨工序提供加工余量的依據(jù)也是難點(diǎn)之一。本課題首先采用單點(diǎn)晶向誤差與硅片表面截面輪廓相結(jié)合的方法測(cè)定表面各點(diǎn)的晶向誤差;其次,采用單晶回?cái)[曲線法測(cè)定電火花線切割后硅片表面損傷層深度。最后,為進(jìn)一步提高單晶硅定晶向切割的精度并減少切割中產(chǎn)生的損傷層厚度,將金屬材料電火花多次切割技術(shù)運(yùn)用到單晶硅電火花線切割中。圍繞上述研究?jī)?nèi)容,開(kāi)展的主要工作有:(1)針對(duì)大尺寸定晶向單晶硅,加工后衍射晶體表面不是理想平面,每一個(gè)點(diǎn)的晶向不同的情況。提出了一種利用測(cè)量表面輪廓和單點(diǎn)晶向誤差相結(jié)合的方法來(lái)估算大尺寸定晶向單晶硅表面各個(gè)點(diǎn)的晶向誤差,實(shí)驗(yàn)結(jié)果與理論分析吻合度較高。(2)制備高完整性表面的單晶硅片是光學(xué)檢測(cè)器件生產(chǎn)中的一個(gè)重要部分。針對(duì)電火花線切割在加工單晶硅片的過(guò)程中所產(chǎn)生的損傷層,提出了基于X射線回?cái)[曲線法與腐蝕相結(jié)合測(cè)定加工后硅片表面損傷深度的方法,分別從測(cè)量原理,不同晶向以及不同切割能量等方面進(jìn)行了理論分析與實(shí)驗(yàn)研究。研究表明,該方法不僅可以有效地測(cè)定電火花定晶向切割單晶硅片表面損傷層厚度,還可以反映放電切割加工后表面損傷情況。(3)研究了單晶硅電火花線切割在不同放電能量下?lián)p傷層厚度和放電間隙。根據(jù)分析找出多次切割中合理的修刀補(bǔ)償值等參數(shù),并通過(guò)實(shí)驗(yàn)進(jìn)行了驗(yàn)證。實(shí)驗(yàn)表明采用電火花多次切割技術(shù),能夠有效地對(duì)定晶向單晶硅進(jìn)行高效、高表面質(zhì)量切割加工,在同等加工表面質(zhì)量條件下,與以往的一次切割相比,大大縮短了加工時(shí)間,簡(jiǎn)化了后續(xù)處理工序。(4)研究了電火花多次切割技術(shù)對(duì)加工定晶向單晶硅晶向精度的影響。當(dāng)切割大尺寸單晶硅時(shí),電火花多次切割不僅提高了定晶向切割硅片的表面質(zhì)量,同時(shí)也提高了硅片表面的晶向精度,使得切割表面晶向誤差的波動(dòng)明顯減少。
[Abstract]:With the rapid development of modern science and technology, single crystal diffraction crystals with specific crystal orientation have been more and more widely used in high-tech fields, such as neutron scattering spectrometer, hard X-ray calibration device and so on. The surface of the diffraction crystal is not an ideal plane during the wire-cutting of large size single-crystal silicon EDM, and the orientation error of each point is different from that of each point on the ideal plane. It is necessary to measure the crystal orientation accuracy of the whole crystal, and because the crystal size is larger and the load table size is smaller, only the crystal direction accuracy of the crystal surface part is obtained every time, it is difficult to measure, the time consuming is long, and the measuring precision is low. In addition, EDM monocrystalline silicon will form a damage layer on the surface. How to conveniently determine the thickness of the damage layer to provide processing allowance for the subsequent polishing process is also one of the difficulties. In this paper, the single point orientation error and the cross-section profile of the wafer surface are measured by the method of combining the single point orientation error with the profile of the surface section of the wafer, and the depth of the damaged layer on the surface of the silicon wafer after WEDM is measured by the single crystal swing curve method. Finally, in order to further improve the precision of single crystal silicon orientation cutting and reduce the thickness of damage layer produced in the cutting, the metal material EDM technology is applied to single crystal silicon wire discharge cutting. According to the above research contents, the main work carried out is: (1) for large size directionally oriented monocrystalline silicon, the surface of the diffraction crystal is not an ideal plane after processing, and the crystal orientation of each point is different. In this paper, a method is proposed to estimate the crystal direction errors of large size single-crystal silicon surface by combining the measurement of the surface profile with the single-point crystal orientation error. The experimental results are in good agreement with the theoretical analysis. The fabrication of single crystal silicon wafers with high integrity is an important part in the fabrication of optical detection devices. In view of the damage layer caused by WEDM in the process of machining single crystal silicon wafer, a method of measuring the surface damage depth of fabricated silicon wafer based on the combination of X-ray swing curve method and corrosion is put forward. Theoretical analysis and experimental study on different crystal directions and cutting energy were carried out. The results show that the method can not only effectively measure the thickness of the surface damage layer of the single crystal silicon wafer cut by EDM, but also can be used to determine the thickness of the surface damage layer. The damage layer thickness and discharge gap of single crystal silicon WEDM under different discharge energy are also studied. According to the analysis, reasonable parameters such as the compensation value of the cutter are found out and verified by experiments. The experimental results show that the EDM technology can be used to efficiently and efficiently cut the crystal oriented monocrystalline silicon with high surface quality. Under the same surface quality condition, the processing time is greatly shortened compared with the previous cutting. The effect of EDM on the orientation accuracy of single crystal silicon is studied. When the large size monocrystalline silicon is cut, the surface quality of the wafer is improved not only by EDM, but also by the crystal direction precision of the wafer surface, and the fluctuation of the crystal direction error of the cutting surface is obviously reduced.
【學(xué)位授予單位】：南京航空航天大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：TG484

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