本文選題：金剛石薄膜 + 中頻磁控濺射��； 參考：《中國地質大學(北京)》2016年博士論文

【摘要】：在硬質合金與金剛石薄膜之間添加碳化物過渡層是制備高質量金剛石薄膜,提升星際鉆探等領域工具使用性能的有效方法。目前常用的高溫化學氣相沉積(CVD)過渡層制備方法存在界面粗化和高熱應力等問題,會導致過渡層使用效果和金剛石薄膜性能的降低。探索低溫沉積碳化物過渡層方法是改善硬質合金金剛石涂層界面性能的重要前沿課題。本論文在評述硬質合金金剛石涂層研究進展和熱點問題的基礎上,以碳化物金剛石過渡層的低溫沉積方法為核心,以中頻磁控濺射和離子注入方法為手段,進行了硬質合金表面Si、Ti碳化物過渡層的低溫制備及性能研究,并探索了過渡層制備工藝對金剛石涂層的影響。通過對薄膜成分、結構和結合性能等方面的系統(tǒng)考察,分析了制備工藝和薄膜性能的交互關系,從而揭示了沉積工藝對碳化物過渡層和金剛石薄膜的影響規(guī)律,探討了碳化物過渡層影響金剛石薄膜形核、生長和性能的作用機理。本研究試圖獲得效果顯著、重復性好的碳化物過渡層低溫沉積方法和工藝設計,制備性能優(yōu)異的硬著合金金剛石涂層工具,拓展硬質合金工具在星際鉆探和特種加工等領域的應用范圍。本文通過大量實驗和分析測試,取得了如下的研究成果:1.采用中頻磁控濺射技術在不同沉積溫度、偏壓、靶電流和反應氣體流量下制備了SiC過渡層,考察了工藝條件變化對SiC過渡層表面形貌、成分、組織結構及附著性能等方面的影響。結果表明:沉積溫度、偏壓、靶電流和反應氣體(C2H2)流量的變化會對SiC膜層的表面形貌、成分等產生規(guī)律性的影響,通過對工藝參數(shù)的調控,可以實現(xiàn)對SiC膜層結構、成分、性能等方面的控制,獲得適合金剛石形核、生長與性能提升的過渡效果。2.采用HFCVD技術在不同工藝參數(shù)下的SiC過渡層樣品表面沉積了金剛石薄膜,分析研究了SiC過渡層表面組織形貌、缺陷、膜層成分及相結構對金剛石薄膜形核、生長及性能等方面的影響規(guī)律。結果表明:SiC過渡層的組織缺陷、成分和相組成會顯著影響金剛石的形核及膜層性能,致密度高、Si和C元素比接近1:1、β-SiC含量高的SiC過渡層更有利于獲得高質量的金剛石薄膜。β-SiC過渡層對金剛石形核和膜層質量提升具有重要的促進作用,其對金剛石形核的作用過程可以分為六個階段:形核準備階段、原子活化階段、原子替換階段、晶核形成階段、晶核生長階段、膜層擴展階段。3.采用離子注入方法在硬質合金表面制備了TiC薄層,系統(tǒng)分析了Ti離子在不同的注入能量下對硬質合金樣品表面形貌、成分等方面的影響和對金剛石形核、生長及性能方面的影響。結果表明:Ti離子注入能量的變化會對硬質合金表面TiC薄層的成分、結構和性能產生規(guī)律性的影響,在注入能量為35 KV時可以獲得較理想的效果,該膜層能夠更好地促進金剛石的形核并獲得附著性能良好的金剛石薄膜。
[Abstract]:The addition of carbide transition layer between cemented carbide and diamond films is an effective method to prepare high quality diamond films and improve the performance of tools in interstellar drilling. Some problems such as interface coarsening and high thermal stress exist in the common methods of preparing transition layer of high temperature chemical vapor deposition (CVD), which will lead to the decrease of the effect of the transition layer and the performance of diamond film. Exploring the method of low temperature deposition of carbide transition layer is an important frontier issue in improving the interfacial properties of cemented carbide diamond coatings. Based on the review of the research progress and hot issues of cemented carbide diamond coatings, the low temperature deposition method of carbide diamond transition layer and the method of intermediate frequency magnetron sputtering and ion implantation are taken as the core of this paper. The low temperature preparation and properties of Si-Ti carbide transition layer on cemented carbide surface were studied, and the effect of transition layer preparation process on diamond coating was explored. Based on the systematic investigation of the composition, structure and bonding properties of the films, the interaction between the preparation process and the properties of the films was analyzed, and the influence of the deposition process on the carbide transition layer and the diamond film was revealed. The mechanism of effect of carbide transition layer on nucleation, growth and properties of diamond films was discussed. The aim of this study is to obtain the effective and reproducible low temperature deposition method and process design of carbide transition layer, and to prepare hard alloy diamond coating tools with excellent performance. Expand the application of cemented carbide tools in interstellar drilling and special processing. In this paper, through a large number of experiments and analytical tests, we have obtained the following research results: 1. 1. SiC transition layer was prepared by intermediate frequency magnetron sputtering at different deposition temperature, bias voltage, target current and reactive gas flow rate. The surface morphology and composition of SiC transition layer were investigated by changing the process conditions. The influence of structure and adhesion. The results show that the changes of deposition temperature, bias voltage, target current and reactive gas flow rate will have regular effects on the surface morphology and composition of SiC film. The structure and composition of SiC film can be realized by adjusting the process parameters. The transition effect of diamond nucleation, growth and performance was obtained by controlling the properties of diamond. Diamond films were deposited on the surface of SiC transition layer samples with different process parameters by HFCVD technique. Microstructure, defects, film composition and phase structure of SiC transition layer were studied to nucleate diamond films. The effect of growth and performance. The results show that the microstructure defect, composition and phase composition of the transition layer of 1: sic can significantly affect the nucleation and film properties of diamond. The SiC transition layer with high density of Si and C is more advantageous to obtain high quality diamond films than the SiC transition layer with high content of 尾 -SiC. The 尾 -SiC transition layer plays an important role in promoting the nucleation and quality improvement of diamond films. The process of nucleation of diamond can be divided into six stages: nucleation preparation stage, atomic activation stage, atomic substitution stage, nucleation growth stage, film expansion stage. TiC thin layer was prepared on cemented carbide surface by ion implantation method. The effects of Ti ion on surface morphology and composition of cemented carbide samples and diamond nucleation were systematically analyzed at different implantation energies. Growth and performance effects. The results show that the composition, structure and properties of the TiC thin layer on the cemented carbide surface can be affected regularly by the change of the energy of the implanted ion. The ideal effect can be obtained when the implantation energy is 35 KV. The film can better promote diamond nucleation and obtain diamond films with good adhesion.
【學位授予單位】：中國地質大學(北京)
【學位級別】：博士
【學位授予年份】：2016
【分類號】：TG174.4

【參考文獻】

相關期刊論文 前10條

1 崔雨瀟;趙天奇;孫方宏;沈彬;;基于非晶SiO_2過渡層在硬質合金刀具基體上沉積金剛石涂層（英文）[J];Transactions of Nonferrous Metals Society of China;2015年09期

2 崔雨瀟;趙天奇;孫方宏;沈彬;;基于中間過渡層技術提高金剛石薄膜與硬質合金基體間附著力的研究進展[J];中國科技論文;2015年06期

3 寧來元;金騰;李曉靜;于盛旺;申艷艷;唐偉忠;賀志勇;;沉積溫度對硬質合金表面MPCVD法制備SiC過渡層的影響[J];人工晶體學報;2014年04期

4 夏木建;丁紅燕;周廣宏;章躍;;Ti層對316L不銹鋼表面TiB_2薄膜結合力的影響(英文)[J];Transactions of Nonferrous Metals Society of China;2013年10期

5 崔雨瀟;張建國;孫方宏;張志明;;硅摻雜CVD金剛石薄膜(英文)[J];Transactions of Nonferrous Metals Society of China;2013年10期

6 趙齊;代明江;韋春貝;邱萬奇;;鈦過渡層及研磨預處理對金剛石薄膜質量的影響[J];熱加工工藝;2013年14期

7 馬世杰;劉佳;王西彬;黑鴻君;;以SiC過渡層為預處理工藝的金剛石涂層硬質合金微徑銑刀研究[J];新技術新工藝;2013年05期

8 黑鴻君;李義鋒;劉艷青;唐偉忠;馬世杰;;強電流直流伸展電弧法制備硬質合金微型工具的SiC過渡層和金剛石涂層[J];功能材料;2013年08期

9 王明智;;金剛石工具制造技術的發(fā)展與熱點問題[J];超硬材料工程;2012年01期

10 呂繼磊;滿衛(wèi)東;陳朋;朱金鳳;吳飛飛;;硬質合金CVD金剛石涂層最新進展[J];硬質合金;2011年05期

相關博士學位論文 前4條

1 馬玉平;金剛石涂層工具制備及其應用研究[D];上海交通大學;2007年

2 白秀琴;低溫氣相沉積薄膜及其摩擦學性能研究[D];機械科學研究總院;2006年

3 劉沙;硬質合金基體表面預處理及其金剛石涂層的研究[D];中南大學;2003年

4 王玫;β-SiC薄膜的低溫沉積及特性研究[D];北京工業(yè)大學;2002年

相關碩士學位論文 前2條

1 張東燦;金剛石薄膜和類金剛石薄膜摩擦學性能試驗及其應用研究[D];上海交通大學;2010年

2 段冰;石墨靶電流對磁控濺射類石墨鍍層結構與性能的影響[D];西安理工大學;2007年

，

本文編號：1983282