本文選題：金剛石薄膜 + 中頻磁控濺射�。� 參考：《中國(guó)地質(zhì)大學(xué)(北京)》2016年博士論文

【摘要】：在硬質(zhì)合金與金剛石薄膜之間添加碳化物過渡層是制備高質(zhì)量金剛石薄膜,提升星際鉆探等領(lǐng)域工具使用性能的有效方法。目前常用的高溫化學(xué)氣相沉積(CVD)過渡層制備方法存在界面粗化和高熱應(yīng)力等問題,會(huì)導(dǎo)致過渡層使用效果和金剛石薄膜性能的降低。探索低溫沉積碳化物過渡層方法是改善硬質(zhì)合金金剛石涂層界面性能的重要前沿課題。本論文在評(píng)述硬質(zhì)合金金剛石涂層研究進(jìn)展和熱點(diǎn)問題的基礎(chǔ)上,以碳化物金剛石過渡層的低溫沉積方法為核心,以中頻磁控濺射和離子注入方法為手段,進(jìn)行了硬質(zhì)合金表面Si、Ti碳化物過渡層的低溫制備及性能研究,并探索了過渡層制備工藝對(duì)金剛石涂層的影響。通過對(duì)薄膜成分、結(jié)構(gòu)和結(jié)合性能等方面的系統(tǒng)考察,分析了制備工藝和薄膜性能的交互關(guān)系,從而揭示了沉積工藝對(duì)碳化物過渡層和金剛石薄膜的影響規(guī)律,探討了碳化物過渡層影響金剛石薄膜形核、生長(zhǎng)和性能的作用機(jī)理。本研究試圖獲得效果顯著、重復(fù)性好的碳化物過渡層低溫沉積方法和工藝設(shè)計(jì),制備性能優(yōu)異的硬著合金金剛石涂層工具,拓展硬質(zhì)合金工具在星際鉆探和特種加工等領(lǐng)域的應(yīng)用范圍。本文通過大量實(shí)驗(yàn)和分析測(cè)試,取得了如下的研究成果:1.采用中頻磁控濺射技術(shù)在不同沉積溫度、偏壓、靶電流和反應(yīng)氣體流量下制備了SiC過渡層,考察了工藝條件變化對(duì)SiC過渡層表面形貌、成分、組織結(jié)構(gòu)及附著性能等方面的影響。結(jié)果表明:沉積溫度、偏壓、靶電流和反應(yīng)氣體(C2H2)流量的變化會(huì)對(duì)SiC膜層的表面形貌、成分等產(chǎn)生規(guī)律性的影響,通過對(duì)工藝參數(shù)的調(diào)控,可以實(shí)現(xiàn)對(duì)SiC膜層結(jié)構(gòu)、成分、性能等方面的控制,獲得適合金剛石形核、生長(zhǎng)與性能提升的過渡效果。2.采用HFCVD技術(shù)在不同工藝參數(shù)下的SiC過渡層樣品表面沉積了金剛石薄膜,分析研究了SiC過渡層表面組織形貌、缺陷、膜層成分及相結(jié)構(gòu)對(duì)金剛石薄膜形核、生長(zhǎng)及性能等方面的影響規(guī)律。結(jié)果表明:SiC過渡層的組織缺陷、成分和相組成會(huì)顯著影響金剛石的形核及膜層性能,致密度高、Si和C元素比接近1:1、β-SiC含量高的SiC過渡層更有利于獲得高質(zhì)量的金剛石薄膜。β-SiC過渡層對(duì)金剛石形核和膜層質(zhì)量提升具有重要的促進(jìn)作用,其對(duì)金剛石形核的作用過程可以分為六個(gè)階段:形核準(zhǔn)備階段、原子活化階段、原子替換階段、晶核形成階段、晶核生長(zhǎng)階段、膜層擴(kuò)展階段。3.采用離子注入方法在硬質(zhì)合金表面制備了TiC薄層,系統(tǒng)分析了Ti離子在不同的注入能量下對(duì)硬質(zhì)合金樣品表面形貌、成分等方面的影響和對(duì)金剛石形核、生長(zhǎng)及性能方面的影響。結(jié)果表明:Ti離子注入能量的變化會(huì)對(duì)硬質(zhì)合金表面TiC薄層的成分、結(jié)構(gòu)和性能產(chǎn)生規(guī)律性的影響,在注入能量為35 KV時(shí)可以獲得較理想的效果,該膜層能夠更好地促進(jìn)金剛石的形核并獲得附著性能良好的金剛石薄膜。
[Abstract]:The addition of carbide transition layer between cemented carbide and diamond films is an effective method to prepare high quality diamond films and improve the performance of tools in interstellar drilling. Some problems such as interface coarsening and high thermal stress exist in the common methods of preparing transition layer of high temperature chemical vapor deposition (CVD), which will lead to the decrease of the effect of the transition layer and the performance of diamond film. Exploring the method of low temperature deposition of carbide transition layer is an important frontier issue in improving the interfacial properties of cemented carbide diamond coatings. Based on the review of the research progress and hot issues of cemented carbide diamond coatings, the low temperature deposition method of carbide diamond transition layer and the method of intermediate frequency magnetron sputtering and ion implantation are taken as the core of this paper. The low temperature preparation and properties of Si-Ti carbide transition layer on cemented carbide surface were studied, and the effect of transition layer preparation process on diamond coating was explored. Based on the systematic investigation of the composition, structure and bonding properties of the films, the interaction between the preparation process and the properties of the films was analyzed, and the influence of the deposition process on the carbide transition layer and the diamond film was revealed. The mechanism of effect of carbide transition layer on nucleation, growth and properties of diamond films was discussed. The aim of this study is to obtain the effective and reproducible low temperature deposition method and process design of carbide transition layer, and to prepare hard alloy diamond coating tools with excellent performance. Expand the application of cemented carbide tools in interstellar drilling and special processing. In this paper, through a large number of experiments and analytical tests, we have obtained the following research results: 1. 1. SiC transition layer was prepared by intermediate frequency magnetron sputtering at different deposition temperature, bias voltage, target current and reactive gas flow rate. The surface morphology and composition of SiC transition layer were investigated by changing the process conditions. The influence of structure and adhesion. The results show that the changes of deposition temperature, bias voltage, target current and reactive gas flow rate will have regular effects on the surface morphology and composition of SiC film. The structure and composition of SiC film can be realized by adjusting the process parameters. The transition effect of diamond nucleation, growth and performance was obtained by controlling the properties of diamond. Diamond films were deposited on the surface of SiC transition layer samples with different process parameters by HFCVD technique. Microstructure, defects, film composition and phase structure of SiC transition layer were studied to nucleate diamond films. The effect of growth and performance. The results show that the microstructure defect, composition and phase composition of the transition layer of 1: sic can significantly affect the nucleation and film properties of diamond. The SiC transition layer with high density of Si and C is more advantageous to obtain high quality diamond films than the SiC transition layer with high content of 尾 -SiC. The 尾 -SiC transition layer plays an important role in promoting the nucleation and quality improvement of diamond films. The process of nucleation of diamond can be divided into six stages: nucleation preparation stage, atomic activation stage, atomic substitution stage, nucleation growth stage, film expansion stage. TiC thin layer was prepared on cemented carbide surface by ion implantation method. The effects of Ti ion on surface morphology and composition of cemented carbide samples and diamond nucleation were systematically analyzed at different implantation energies. Growth and performance effects. The results show that the composition, structure and properties of the TiC thin layer on the cemented carbide surface can be affected regularly by the change of the energy of the implanted ion. The ideal effect can be obtained when the implantation energy is 35 KV. The film can better promote diamond nucleation and obtain diamond films with good adhesion.
【學(xué)位授予單位】：中國(guó)地質(zhì)大學(xué)(北京)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類號(hào)】：TG174.4

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本文編號(hào)：1983282