本文選題：單晶 + 晶體取向��； 參考：《焊接學(xué)報(bào)》2017年01期

【摘要】：為了探明單晶高溫合金TLP擴(kuò)散焊接頭單晶化機(jī)理,采用掃描電鏡(SEM)、背散射電子(BES)和背散射衍射(EBSD)分析接頭微觀組織.結(jié)果表明,接頭內(nèi)形成貫穿型晶界和等軸晶粒是接頭無法實(shí)現(xiàn)單晶化的主要原因.在實(shí)際焊接過程中,應(yīng)嚴(yán)格控制試樣加工、中間層添加、裝配、焊接等工序.在等溫凝固階段,液相依附于固態(tài)單晶基體以平面晶的方式外延生長(zhǎng),直至液相消失,界面上形成具有一致晶體取向的一塊單晶,隨著保溫時(shí)間的延長(zhǎng),固態(tài)均勻化過程充分進(jìn)行,冷卻后將形成單晶化的接頭.
[Abstract]:In order to find out the mechanism of single crystal superalloy TLP diffusion welding joint, the microstructure of the joint was analyzed by means of scanning electron microscopy (SEM), back scattering electron beam (BES) and backscattering diffraction (EBSD). The results show that the formation of penetrating grain boundaries and equiaxed grains in the joints is the main reason for the failure of the joints to realize monocrystallization. In the actual welding process, the process of sample processing, interlayer addition, assembly and welding should be strictly controlled. At the stage of isothermal solidification, the liquid phase adheres to the solid single crystal matrix and epitaxially grows in the form of plane crystal, until the liquid phase disappears, and a single crystal with uniform crystal orientation is formed on the interface. With the prolongation of the holding time, The process of solid-state homogenization is fully carried out, and a single crystal joint will be formed after cooling.
【作者單位】： 北京航空制造工程研究所航空焊接與連接技術(shù)航空科技重點(diǎn)實(shí)驗(yàn)室;北京科技大學(xué);
【分類號(hào)】：TG453.9
，

本文編號(hào)：1776314