本文關(guān)鍵詞：銅箔表面化學氣相沉積少層石墨烯　出處：《材料科學與工程學報》2016年01期 　論文類型：期刊論文

  更多相關(guān)文章： 石墨烯 銅箔 化學氣相沉積法 鹽酸 生長時間

【摘要】：利用化學氣相沉積法(CVD法),在金屬基底上生長大面積、少層數(shù)和高質(zhì)量的石墨烯是近年來研究的熱點。本研究采用CVD法,在常壓高溫條件下,以氬氣為載體、氫氣為還原氣體、乙烯為碳源,在銅箔表面生長石墨烯。通過掃描電子顯微圖(SEM)、X射線衍射儀(XRD)和拉曼圖譜(Raman)分析,發(fā)現(xiàn)銅箔表面質(zhì)量和石墨烯的生長時間對石墨烯的層數(shù)和缺陷有較大影響。用20%的鹽酸去除銅箔表面的保護膜和Cu_2O等雜質(zhì),銅箔在1000℃下退火60min可以使銅箔晶粒尺寸增大以及改善銅箔表面的形貌。研究發(fā)現(xiàn)生長時間為60s和90s時,制備的石墨烯薄膜對稱性良好且層數(shù)較少。其中,生長時間為90s時,拉曼表征石墨烯的I_D/I_G值為0.7,表明其缺陷比較少。
[Abstract]:Using chemical vapor deposition (CVD) method to grow graphene on metal substrates with large area, few layers and high quality is a hot topic in recent years. In this study, CVD method was used at atmospheric pressure and high temperature. Graphene was grown on the surface of copper foil using argon as carrier, hydrogen as reducing gas and ethylene as carbon source. X-ray diffractometer (XRD) and Raman spectra (Raman). It was found that the surface quality of copper foil and the growth time of graphene had great influence on the number of layers and defects of graphene. 20% hydrochloric acid was used to remove impurities such as protective film and Cu_2O on the surface of copper foil. After annealing at 1000 鈩，

本文編號：1378553