石墨烯是一種由sp~2雜化碳原子組成的二維碳納米材料。由于其特殊的性質(zhì),在世界范圍內(nèi)引起了廣泛的關(guān)注和研究�；瘜W(xué)氣相沉積法（CVD）是制備石墨烯最有效、最常用的方法。然而,傳統(tǒng)的CVD石墨烯生長(zhǎng)溫度非常高（1 000℃）,這不僅使得石墨烯制備成本高,而且限制了其在某些領(lǐng)域的應(yīng)用。因此,低溫下石墨烯的合成是目前研究者關(guān)注的焦點(diǎn)。前驅(qū)體類型（氣態(tài)、液態(tài)、固態(tài)）和襯底類型（過(guò)渡金屬、合金、介質(zhì)襯底）是影響石墨烯合成溫度的重要因素。本文將從以上幾個(gè)方面對(duì)低溫條件下CVD合成石墨烯的研究結(jié)果進(jìn)行綜述。 

【文章頁(yè)數(shù)】：16 頁(yè)

【文章目錄】：
1 Introduction
2 Influence factors of graphene grow th at low temperature
    2.1 The type of precursor
        2.1.1 Gaseous precursor
        2.1.2 Liquid precursor
        2.1.3 Solid precursor
    2.2 The type of substrate
        2.2.1 Transition metal
        2.2.2 Alloy
        2.2.3 Dielectric substrate
3 Recent research w ork
4 Summary and outlook


【參考文獻(xiàn)】：
期刊論文
[1]Synthesis of graphene on a Ni film by radio-frequency plasma-enhanced chemical vapor deposition[J]. QI JunLei 1,ZHANG LiXia 1,CAO Jian 1,ZHENG WeiTao 2,WANG Xin 2 ＆ FENG JiCai 1 1 State Key Laboratory of Advanced Welding and Joining,Department of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,China;2 Department of Materials Science,Key Laboratory of Mobile Materials,Ministry of Education,and State Key Laboratory of Superhard Materials,Jilin University,Changchun 130012,China.  Chinese Science Bulletin. 2012(23)



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