釔穩(wěn)氧化鋯的高溫電性能
發(fā)布時間:2019-04-16 00:14
【摘要】:模擬氧化鋯質(zhì)定徑水口基質(zhì)組成和燒結(jié)穩(wěn)定過程,以Y_2O_3為穩(wěn)定劑,分別按照1.8%(質(zhì)量分?jǐn)?shù))、3.6%和5.4%的摻雜量,與單斜氧化鋯細(xì)粉混合后經(jīng)1 710℃保溫2 h燒成制備釔穩(wěn)氧化鋯試樣。借助X射線衍射和掃描電子顯微鏡,研究了不同試樣相組成和顯微結(jié)構(gòu)的差異。根據(jù)定徑水口使用中雜質(zhì)呈固相擴(kuò)散的區(qū)域和溫度范圍,測定了不同試樣室溫到1 350℃的電導(dǎo)率。采用坩堝法測定了氧化鋯材料的抗渣蝕性能。結(jié)果表明:隨著穩(wěn)定劑添加總量的增加,試樣中立方相含量增加,單斜相含量明顯減少。試樣的電導(dǎo)率隨穩(wěn)定劑摻雜總量的增加呈上升趨勢,且隨著測試溫度的升高而增大。由于相組成的變化,釔穩(wěn)定氧化鋯質(zhì)材料在高低溫區(qū)電導(dǎo)率存在顯著差異。氣孔的存在不僅降低了試樣的電導(dǎo)率,也使其抗渣蝕性能減弱。
[Abstract]:The composition and sintering stabilization process of Zirconia diameter nozzle matrix were simulated. Using Y_2O_3 as stabilizer, doping amounts of 1.8% (mass fraction), 3.6% and 5.4%, respectively, were used as stabilizers. Yttrium stabilized zirconia samples were prepared by mixing with monoclinic zirconia powder and sintered at 1710 鈩,
本文編號:2458622
[Abstract]:The composition and sintering stabilization process of Zirconia diameter nozzle matrix were simulated. Using Y_2O_3 as stabilizer, doping amounts of 1.8% (mass fraction), 3.6% and 5.4%, respectively, were used as stabilizers. Yttrium stabilized zirconia samples were prepared by mixing with monoclinic zirconia powder and sintered at 1710 鈩,
本文編號:2458622
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