【摘要】：壓電陶瓷材料因具有機(jī)械能—電能相互轉(zhuǎn)化的性能,被廣泛地應(yīng)用在航空航天、醫(yī)療、生活藝術(shù)等各領(lǐng)域。無鉛壓電陶瓷由于不含鉛、不污染環(huán)境,符合人類社會(huì)可持續(xù)發(fā)展的要求,因而備受產(chǎn)業(yè)界和研究人員的青睞。為了提高BCZT壓電陶瓷的居里溫度Tc,獲得電性能更優(yōu)的壓電陶瓷,本文采用摻雜Sb_2O_3、Bi_2O_3以及BKT材料對BCZT進(jìn)行改性研究,運(yùn)用SEM、XRD、拉曼檢測、TEM、壓電性能測試等手段研究了離子摻雜對BCZT基無鉛壓電陶瓷顯微組織、相結(jié)構(gòu)和電學(xué)性能的影響,主要研究結(jié)果如下:(1)針對(Ba_0.85Ca_0.15)(Ti_0.9Zr_0.08Sn_0.02)O_3-xSb_2O_3(x=0,0.02,0.04,0.06,0.08wt.%)體系,探討了不同Sb~(3+)摻雜量對BCZTS陶瓷顯微物相結(jié)構(gòu)、組織形貌和電性能的影響。結(jié)果表明,不同摻雜量得到的組分均表現(xiàn)出純的鈣鈦礦結(jié)構(gòu),Sb~(3+)完全固溶于BCZTS陶瓷主晶相結(jié)構(gòu)中。未摻雜Sb~(3+)的居里溫度為78℃[1],摻雜Sb~(3+)后的最高居里溫度為102℃。當(dāng)x=0.04 wt.%時(shí),BCZTS-xSb陶瓷擁有最優(yōu)的電學(xué)性能:d_33=392pC/N,K_p=61%,ε_(tái)r~4830,tan_δ~2.44%,T_c=102 ℃。(2)針對Ba_0.85Ca_0.15Zr_0.07Ti_0.93O_(3-x) Bi_2O_3(x=0,0.02,0.04,0.06wt.%)體系,探討了不同Bi~(3+)摻雜量對BCZT陶瓷相結(jié)構(gòu)、壓電性能和介電性能等的影響。結(jié)果表明,陶瓷試樣的不同組分都生成了純的鈣鈦礦結(jié)構(gòu),且隨著Bi~(3+)摻雜量的增加,陶瓷試樣的相結(jié)構(gòu)沒有較大變化。當(dāng)x=0.06wt.%時(shí),陶瓷具有最好的介電性能,ε_(tái)r=5100,tan_δ=1.2%。當(dāng)x=0wt.%時(shí),陶瓷試樣擁有最好的壓電性能,d_33=386pC/N,K_p=45%,當(dāng)x=0.02wt.%時(shí),居里溫度最高,T_c=103 ℃。(3)對于(1-x)(Ba_0.85Ca_0.15)(Ti_0.93Zr_0.07)O_(3-x)(Bi_0.5K_0.5)TiO_3(x=0.02,0.04,0.06,0.08 mol)體系,研究了不同BKT摻雜量對BCZT陶瓷顯微組織、相結(jié)構(gòu)和電學(xué)性能的影響。結(jié)果表明,摻雜BKT后的陶瓷均形成了純的鈣鈦礦結(jié)構(gòu),且當(dāng)x=0.04mol時(shí),試樣顯微組織最均勻,致密度最高。隨著x的變大,d_33和K_p首先都提升隨后有所降低。當(dāng)x=0.04 mol時(shí),(1-x)BCZT-xBKT陶瓷擁有最佳的電學(xué)性能:d_33=342 pC/N,K_p=57%,ε_(tái)r~3319,tan_δ~2.32%,T_c=103 ℃。
[Abstract]:Piezoelectric ceramic materials have been widely used in aerospace, medical treatment, life art and other fields because of their mechanical energy and electrical energy conversion. Lead-free piezoelectric ceramics are favored by industry and researchers because they do not contain lead, do not pollute the environment and meet the requirements of sustainable development of human society. In order to improve the Curie temperature (Tc) of BCZT piezoelectric ceramics and obtain piezoelectric ceramics with better electrical properties, the modification of BCZT by doping SB _ 2O _ 3 and BKT materials has been studied in this paper. The effects of ion doping on the microstructure, phase structure and electrical properties of BCZT based lead-free piezoelectric ceramics were studied by means of BCZT XRD, Raman Tem and piezoelectric properties. The main results are as follows: (1) for the (Ba_0.85Ca_0.15) (Ti_0.9Zr_0.08Sn_0.02) O_3-xSb_2O_3 (x0 / 0 / 0. 02 / 0. 020 / 0. 040 ~ 0. 08wt.%) system, the effect of ion doping on the microstructure, phase structure and electrical properties of lead-free piezoelectric ceramics based on BCZT was studied. The main results are as follows: (1) for the system of (Ba_0.85Ca_0.15) (Ti_0.9Zr_0.08Sn_0.02), The effects of different doping amount of SB ~ (3) on the phase structure, microstructure and electrical properties of BCZTS ceramics were investigated. The results show that the pure perovskite structure and SB ~ (3) are completely dissolved in the main crystal structure of BCZTS ceramics. The Curie temperature of undoped SB ~ (3) is 78 鈩，

本文編號(hào)：2168473